1. Gate Reliability of Schottky-Type p -GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias.
- Author
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Cheng, Yan, He, Jiabei, Xu, Han, Zhong, Kailun, Zheng, Zheyang, Sun, Jiahui, and Chen, Kevin J.
- Subjects
MODULATION-doped field-effect transistors ,ENERGY bands ,LOW voltage systems ,LOGIC circuits ,PRIVATE communities ,ELECTRONS - Abstract
With a switching drain bias, the gate reliability of Schottky-type ${p}$ -GaN gate high-electron-mobility transistors (HEMTs) under AC positive gate bias stress has been systematically investigated. The mean-time-to-failure (MTTF) under such application-relevant stress is found to be prolonged compared to that extracted from static and AC gate bias stress tests with the absence of a switching drain bias and exhibits positive coefficients with frequency and OFF-state drain bias (${V} _{\text {DSQ}}$). Such results can be explained by the drain-induced hole insufficiency in the gate stack at large ${V} _{\text {DSQ}}$ , a physical mechanism that results in elevated energy band at ON-state when ${V} _{\text {DSQ}}$ is just switched to low voltage. This non-equilibrium transient status could suppress injection of electrons from the 2DEG channel to the ${p}$ -GaN gate, which in turn substantially weakens the hot-electron’s generation in the depleted ${p}$ -GaN layer and the subsequent bombardment to the gate-metal/ ${p}$ -GaN interface, and thus prolongs the gate lifetime. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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