1. Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al 2 O 3 /Si 3 N 4 Gate Insulator Under Hot Switching.
- Author
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Wu, Pei-Yu, Tsai, Xin-Ying, Chang, Ting-Chang, Yeh, Yu-Hsuan, Huang, Wei-Chen, Chang, Kai-Chun, Tsai, Tsung-Ming, and Huang, Jen-Wei
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MODULATION-doped field-effect transistors , *ALUMINUM oxide , *INDIUM gallium zinc oxide , *IMPACT ionization , *WIDE gap semiconductors , *GALLIUM nitride , *METAL insulator semiconductors - Abstract
As a transmitter power amplifier (PA), the electrical output characteristics of gallium nitride (GaN) high electron mobility transistors (HEMTs) are closely related to the drain current versus drain voltage (${I}_{d}$ – ${V}_{d}$) characteristics. Any abnormalities in the ${I}_{d}$ – ${V}_{d}$ characteristics will seriously affect device performance. Therefore, many groups have investigated the kink effect of GaN HEMTs. One of the commonly used measurement methods of the kink effect is the ${I}_{d}$ – ${V}_{d}$ forward and reverse sweep. In this study, we used the same method for Al2O3/Si3N4–AlGaN/GaN metal–insulator–semiconductor HEMT (MIS HEMT) devices. We found that not only did the kink effect occurred but ${I}_{d}$ also increased abnormally during the reverse sweep and after a series of electrical measurements. At the end of the forward sweep, impact ionization caused by a high ${V}_{d}$ generated electron–hole pairs and some holes accumulated under the gate region, which caused the negative shift of the threshold voltage (${V}_{\text{Th}}$), leading to an abnormal increase in ${I}_{d}$ during the reverse sweep. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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