1. Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs.
- Author
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Cioni, Marcello, Zagni, Nicolo, Selmi, Luca, Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico, and Chini, Alessandro
- Subjects
ELECTRIC field effects ,GALLIUM nitride ,POOLE-Frenkel effect ,ELECTRIC fields ,IRON - Abstract
In this article, we separately investigate the role of electric field and device self-heating (SHE) in enhancing the charge emission process from Fe-related buffer traps (0.52 eV from E
c ) in AlGaN/GaN high electron mobility transistors (HEMTs). The experimental analysis was performed by means of drain current transient (DCT) measurements for either: 1) different dissipated power (PD,steady ) at constant drain-to-source bias (VDS,steady ) or 2) constant PD,steady at different VDS,steady ’s. We found that: 1) an increase in PD,steady yields an acceleration in the thermally activated emission process, consistently with the temperature rise induced by SHE and 2) on the other hand, the field-effect turned out to be negligible within the investigated voltage range, indicating the absence of the Poole–Frenkel effect (PFE). A qualitative analysis based on the electric field values obtained by numerical simulations is then presented to support the interpretation and conclusions. [ABSTRACT FROM AUTHOR]- Published
- 2021
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