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Highlights: [•] Low temperature VRH conduction mechanism of Cd0.8Zn02S: Na samples were estimated. [•] Dielectric constant values were calculated. [•] Relaxation time values were computed. [ABSTRACT FROM AUTHOR]

Pb 1-x Zn x S (x = 0 to 0.4 in steps of 0.1) ternary semiconductor material shave been prepared by co-precipitation method. The structural and electrical studies have been carried out to understand the influence of Zinc on activation energy. X-ray diffractograms showed that the Pb 1-x Zn x S compounds are polycrystalline in nature with cubic phase. The temperature-dependent conductivity measured in the range 300–4 K showed a change in the conduction mechanism at 62 K and 31 K. The activation energies evaluated at low and very low temperature regions. Activation energy increases and conductivity decreases with the increase of Zn in Pb 1-x Zn x S compounds. The samples are exhibiting low freezing temperature points indicating their capability to use in low temperature applications. [ABSTRACT FROM AUTHOR]

Plot of Log σ versus 103/T for Co x Zn 1−x S (x = 0–0.1) compounds. [Display omitted] • Bulk polycrystalline Co x Zn 1−x S (0 ≤ x ≤ 0.1) ternary semiconductor compounds were prepared by controlled Co-Precipitation method. • The temperature-dependent conductivity measured in the range 300–77 K and the activation energies evaluated. • The dc electrical conductivity increases with increase in cobalt content in all the samples and also increases with temperature, which confirms the semiconductor nature of the samples. • The increase in conductivity of Co x Zn 1−x S compounds and increase in activation energies in region (ii) with increase in cobalt concentration suggests hopping of charge carriers in defect localized states around E F. • It was the first report on freezing of charge carriers and conductivity of Co x Zn 1−x S compounds at low temperature region. Polycrystalline ternary semiconductor compounds with the compositional formula Co x Zn 1−x S (0 ≤ x ≤ 0.1) samples have been synthesized by a controlled co-precipitation technique. The samples are characterized by X-ray diffraction (XRD) method. DC conductivity studies were performed in the temperature region 77–300 K. The dc conductivity plots show the Arrhenius behavior with three different activation energies (Ea) in three different temperature regions I (300–165 K), II (165–100 K), III (100–77 K), and they exhibited the variable range hopping conduction (VRH) mechanism at low temperature region (100–77 K). [ABSTRACT FROM AUTHOR]