Search

The anomalous Nernst effect in a perpendicularly magnetized Ir22Mn78/Co20Fe60B20/MgO thin film is measured using well-defined in-plane temperature gradients. The anomalous Nernst coefficient reaches 1.8 μV/K at room temperature, which is almost 50 times larger than that of a Ta/Co20Fe60B20/MgO thin film with perpendicular magnetic anisotropy. The anomalous Nernst and anomalous Hall results in different sample structures revealing that the large Nernst coefficient of the Ir22Mn78/Co20Fe60B20/MgO thin film is related to the interface between CoFeB and IrMn. [ABSTRACT FROM AUTHOR]

We study voltage-controlled magnetic anisotropy (VCMA) and other magnetic properties in annealed MojCoFeBjMgO layered structures. The interfacial perpendicular magnetic anisotropy (PMA) is observed to increase with annealing over the studied temperature range, and a VCMA coefficient of about 40 fJ/V-m is sustained after annealing at temperatures as high as 430 °C. Ab initio electronic structure calculations of interfacial PMA as a function of strain further show that strain relaxation may lead to the increase of interfacial PMA at higher annealing temperatures. Measurements also show that there is no significant VCMA and interfacial PMA dependence on the CoFeB thickness over the studied range, which illustrates the interfacial origin of the anisotropy and its voltage dependence, i.e., the VCMA effect. The high thermal annealing stability of MojCoFeBjMgO structures makes them compatible with advanced CMOS back-end-of-line processes, and will be important for integration of magnetoelectric random access memory into on-chip embedded applications. [ABSTRACT FROM AUTHOR]

The article presents a study focusing on strain-induced modulation of perpendicular magnetic anisotropy (PMA) in tantalum(Ta)/cobalt iron boron (CoFeB)/magnesium oxide (MgO) structures investigated by ferromagnetic resonance. The findings include strain-induced change in PMA extracted from the experimental ferromagnetic resonance (FMR) spectra, modulation of the PMA of an ultrathin CoFeB layer by voltage-induced strain and dependence of the effective damping constant as a function of strain.