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The microstructure and magnetic properties of Nd-Fe-B films with thicknesses from 100 nm to 3 nm have been investigated. All the films show excellent perpendicular magnetic anisotropy with a squareness ratio of 1 in the perpendicular direction and almost zero coercivity in the in-plane direction. Of particular interest is that the initial magnetization curves sensitively depended on the film thickness. Films thicker than 15 nm show steep initial magnetization curve. Although the films have coercivities larger than 21 kOe, the films can be fully magnetized from the thermally demagnetized state with a field as small as 5 kOe. With the decrease of film thickness to 5 nm, the initial magnetization curve becomes flat. The evolution of initial magnetization curves with film thickness can be understood by the microstructure of the films. Films with thickness of 15 nm show close-packed grains without any intergranular phases. Such microstructures lead to steep initial magnetization curves. On the other hand, when the film thickness decreased to 3 nm, the film thickness became nonuniform. Such microstructure leads to flat initial magnetization curves. [ABSTRACT FROM AUTHOR]

Magnetic skyrmions are topological quasiparticles with nanoscale size and high mobility, which have potential applications in information storage and spintronic devices. Here, we computationally investigate the dynamics of isolated skyrmions in a ferromagnetic racetrack, where magnetic properties of the edges are enhanced and modified, forming a channel with lower magnetic anisotropy for skyrmion motion. It is found that the rectangular notch at the edge can have a pinning effect on the skyrmion and enrich the dynamics of the skyrmion. Based on the racetrack with modified edges and the notch, we design a racetrack that realizes the skyrmionic logic AND, OR, and NOT gates as well as the diode in the same magnetic racetrack. It is found that the driving current density could be much smaller than those used in previous designs of skyrmion-based logic gates. By slightly altering the shape of the racetrack, we also design the NAND and NOR gates. Finally, we study the feasibility of our design at finite temperatures. Our results may contribute to the design of nonvolatile spintronic devices with integrated multiple functions and ultra-low energy consumption. [ABSTRACT FROM AUTHOR]

Topological spin textures can serve as non-volatile information carriers. Here we study the current-induced dynamics of an isolated magnetic skyrmion on a nanoscale square-grid pinning pattern formed by orthogonal defect lines with reduced magnetic anisotropy. The skyrmion on the square grid can be pixelated with a quantized size of the grid. We demonstrate that the position, size, and shape of skyrmion on the square grid are electrically configurable. The skyrmion center is quantized to be on the grid and the skyrmion may show a hopping motion instead of a continuous motion. We find that the skyrmion Hall effect can be perfectly prohibited due to the pinning effect of the grid. The pixelated skyrmion can be harnessed to build future programmable racetrack memory, multistate memory, and logic computing device. Our results will be a basis for digital information storage and computation based on pixelated topological spin textures on artificial pinning patterns. Skyrmions are particle-like magnetic structures which could form an important component of future spintronic devices but greater control over their physical characteristics must first be achieved. Here, using micromagnetic simulations, the authors report pixelated skyrmions showing how to engineer their position, size, and shape using a current pulse. [ABSTRACT FROM AUTHOR]

Antiferromagnets are promising materials for future spintronic applications due to their unique properties including zero stray fields, robustness vs external magnetic fields, and ultrafast dynamics, which have attracted extensive interest in recent years. In this work, we investigate the dynamics of isolated skyrmions in an antiferromagnetic nanotrack with a voltage-gated region. It is found that the skyrmion can be jointly controlled by the driving current and the voltage-controlled magnetic anisotropy gradient. We further propose a design of logic computing gates based on the manipulation of antiferromagnetic skyrmions, which is numerically realized combining several interactions and phenomena, including the spin Hall effect, voltage-controlled magnetic anisotropy effect, skyrmion–skyrmion interaction, and skyrmion–edge interaction. The proposed logic gates can perform the basic Boolean operations of the logic AND, OR, NOT, NAND, and NOR gates. Our results may have a great impact on fundamental physics and be useful for designing future nonvolatile logic computing devices with ultra-low energy consumption and ultra-high storage density. [ABSTRACT FROM AUTHOR]

We show a topological spin texture called "bimeronium" in magnets with in-plane magnetization. It is a topological counterpart of skyrmionium in perpendicularly magnetized magnets and can be seen as a combination of two bimerons with opposite topological charges. We report the static structure and spin-orbit-torque-induced dynamics of an isolated bimeronium in a magnetic monolayer with frustrated exchange interactions. We study the anisotropy and magnetic field dependences of a static bimeronium. We also explore the bimeronium dynamics driven by the damping-like spin-orbit torque. We find that the bimeronium shows steady rotation when the spin polarization direction is parallel to the easy axis. Moreover, we demonstrate the annihilation of the bimeronium when the spin polarization direction is perpendicular to the easy axis. Our results are useful for understanding the fundamental properties of bimeronium structures and may offer an approach to build bimeronium-based spintronic devices. [ABSTRACT FROM AUTHOR]

Magnetic skyrmionium can be used as a nanometer-scale non-volatile information carrier, which shows no skyrmion Hall effect due to its special structure carrying zero topological charge. Here, we report the static and dynamic properties of an isolated nanoscale skyrmionium in a frustrated magnetic monolayer, where the skyrmionium is stabilized by competing interactions. The frustrated skyrmionium has a size of about 10 nm, which can be further reduced by tuning perpendicular magnetic anisotropy or the magnetic field. It is found that the nanoscale skyrmionium driven by the damping-like spin-orbit torque shows directional motion with a favored Bloch-type helicity. A small driving current or magnetic field can lead to the transformation of an unstable Néel-type skyrmionium to a metastable Bloch-type skyrmionium. A large driving current may result in the distortion and collapse of the Bloch-type skyrmionium. Our results are useful for the understanding of frustrated skyrmionium physics, which also provide guidelines for the design of spintronic devices based on topological spin textures. [ABSTRACT FROM AUTHOR]

Highlights • Prepared Nd-Fe-B films with perpendicular magnetic anisotropy at lower temperature. • Improved magnetic anisotropy and c-axis orientation by Tb additions. • Demonstrated correlations between as-deposited amorphous crystallized films. • Revealed the origination of crystallographic properties of annealed Nd-Fe-B films. Abstract Nd-Fe-B films with perpendicular magnetic anisotropy are important for various applications. Most common process to prepare Nd-Fe-B thin films with perpendicular magnetic anisotropy is the heteroepitaxy process. Here, Nd-Fe-B thin films with perpendicular magnetic anisotropy were prepared by a two-step process. Amorphous and magnetically soft thin films were first deposited. Crystallized, magnetic hard thin films were obtained by rapid thermal annealing of the as-deposited films. A clear correlation between perpendicular magnetic anisotropy of annealed state and the domain configuration in the as-deposited state was noticed. Films prepared without substrate heating, with additions of Tb show perpendicular coercivity which is larger than 24 kOe. [ABSTRACT FROM AUTHOR]

• Antiskyrmion manipulated by voltage-controlled magnetic anisotropy gradient. • The skyrmion hall effect suppressed using the bilayer antiskyrmions. • The bilayer antiskyrmions move faster than the skyrmion-antiskyrmion pair. • The relations of antiskyrmion velocities and the coupling strength are explored. Magnetic skyrmions could serve as information carriers in next-generation information storage and processing devices. Effective manipulation of the skyrmion motion is a vital task for realizing skyrmion-based applications. Skyrmion motion driven by voltage-controlled magnetic anisotropy (VCMA) has been proposed, of which the investigation is mostly focused on the dynamics of skyrmions. Here, using micromagnetic simulations we show that antiskyrmions can be effectively driven by the VCMA gradient in the presence of the anisotropic Dzyaloshinskii-Moriya interaction. We find that the antiskyrmion shows a transverse motion, i.e., the skyrmion Hall effect, induced by the VCMA gradient. As the skyrmion number of an antiskyrmion is opposite to that of a skyrmion, the anisotropy gradient-induced motion of ferromagnetically coupled skyrmion-antiskyrmion pair and antiferromagnetically coupled skyrmion-skyrmion and antiskyrmion-antiskyrmion pairs do not show the skyrmion Hall effect. We find that the velocity-driving force relations of these three combinations are different. Our results may provide guidelines for building future skyrmion-based information processing applications. [ABSTRACT FROM AUTHOR]

In the era of social media, storage of information plays an important role. Magnetic domain wall memory devices are promising alternatives to hard disk drives for high‐capacity storage. One of the challenges in making these devices for practical application is a precise control of domain wall displacement in nanowires. Researchers have extensively studied domain wall pinning based on topographical notches fabricated by lithography. However, scaling the domain wall memory to nanoscale requires better domain wall pinning strategies. In this letter, we demonstrate that the localized modification of magnetic properties in Co/Pd multilayer‐based nanowires by ion implantation is an effective non‐topographical approach to pin domain walls. First, by micromagnetic simulations, it is shown that the areas, where the composition is modified to tune the anisotropy and magnetization, act as domain wall pinning centers. Experimentally, from magnetization measurements and X‐ray diffraction measurements at the thin film level, it is shown that the ion‐implantation is effective in changing magnetic anisotropy. Devices have also been fabricated and, using Kerr images at different applied fields, it is shown that the domain walls are pinned at the B+ ion‐implanted regions. These results demonstrate that localized compositional modification using ion‐implantation can pin domain walls precisely. The achieved results are useful toward realizing high‐capacity information storage. Ion‐implantation‐induced local modification of magnetic properties has been proposed to form pinning sites to control domain wall motion. Investigations have been carried out on B+ implantation in Co/Pd multilayers and nanowires. B+ implantation reduces the saturation magnetization, anisotropy and helps to form pinning sites in nanowires. [ABSTRACT FROM AUTHOR]