1. Theoretical study of strain induced magnetic transition of single-layer CrTe3.
- Author
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Lu, Zhi-Wei, Qiu, Shao-Bin, Xie, Wen-Qiang, Yang, Xiao-Bao, and Zhao, Yu-Jun
- Subjects
MAGNETIC transitions ,THIN film devices ,SEMICONDUCTOR materials ,ANTIFERROMAGNETIC materials ,MAGNETIC properties ,MOLECULAR dynamics ,MAGNETIC semiconductors - Abstract
Developing novel controllable two-dimensional semiconductor materials is crucial to thin film spintronic devices, which may lead to a revolution of information devices. Recently, the easily cleavable CrTe
3 has attracted much attention for studying the magnetic properties of two-dimensional materials. In this paper, we have demonstrated theoretically that an elastic tensile strain can turn the antiferromagnetic coupled single-layer CrTe3 (SL-CrTe3 ) into a ferromagnetic (FM) system, favoring its potential application in thin film spintronic devices. The FM SL-CrTe3 undergoes a further transition from a semiconductor to a metal under a biaxial tensile strain of 9%. The kinetic stability of SL-CrTe3 under 10% tensile strain is verified by a molecular dynamics simulation at room temperature. We suppose that the strain-dependent magnetic behaviors of SL-CrTe3 resulted from the competition between superexchange and direct interactions. The tunable magnetic and electronic properties of SL-CrTe3 imply immense potential in spintronic device applications. [ABSTRACT FROM AUTHOR]- Published
- 2020
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