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We study the current-driven perpendicular magnetization switching in Ta/CoFeB(wedge)/[TaOx or MgO/TaOx] devices with a lateral structural asymmetry introduced by a varying CoFeB thickness. In these devices, an in-plane current can generate a field-like torque and its corresponding effective magnetic field (HzFL) is out-of-plane, which can deterministically switch perpendicular magnetiza-tion at zero magnetic field. Experimental results indicate that the method used for breaking lateral structural symmetry greatly affects the resulting field-like torque, and that the gradient of perpen-dicular anisotropy, resulting from the CoFeB thickness variation, is not by itself sufficient to give rise to the current-induced HzFL. Analysis of the oxidation gradient at the CoFeB/TaOx interface indicates that the oxidation gradient may play a more important role than the gradient of magnetic anisotropy for the generation of HzFL. For practical applications, the demonstration of perpendicular magnetization switching in Ta/CoFeB(wedge)/MgO/TaOx devices potentially allows for using MgO-based magnetic tunnel junctions for readout in three-terminal memory devices without the need for external magnetic fields [ABSTRACT FROM AUTHOR]

We theoretically study equilibrium and dynamic properties of nanosized magnetic skyrmions in thin magnetic films with broken inversion symmetry, where an electric field couples to magnetization via spin-orbit coupling. Based on a symmetry-based phenomenology and micromagnetic simulations we show that this electric-field coupling, via renormalizing the micromagnetic energy, modifies the equilibrium properties of the skyrmion. This change, in turn, results in a significant alteration of the current-induced skyrmion motion. Particularly, the speed and direction of the skyrmion can be manipulated by designing a desired energy landscape electrically, which we describe within Thiele's analytical model and demonstrate in micromagnetic simulations including electric-field-controlled magnetic anisotropy. We additionally use this electric-field control to construct gates for controlling skyrmion motion exhibiting a transistorlike and multiplexerlike function. The proposed electric-field effect can thus provide a low-energy electrical knob to extend the reach of information processing with skyrmions. [ABSTRACT FROM AUTHOR]

We study the heavy metal layer thickness dependence of the current-induced spin-orbit torque (SOT) in perpendicularly magnetized Hf∣CoFeB∣MgO multilayer structures. The damping-like (DL) current-induced SOT is determined by vector anomalous Hall effect measurements. A nonmonotonic behavior in the DL-SOT is found as a function of the thickness of the heavy-metal layer. The sign of the DL-SOT changes with increasing the thickness of the Hf layer in the trilayer structure. As a result, in the current-driven magnetization switching, the preferred direction of switching for a given current direction changes when the Hf thickness is increased above ∼7 nm. Although there might be a couple of reasons for this unexpected behavior in DL-SOT, such as the roughness in the interfaces and/or impurity based electric potential in the heavy metal, one can deduce a roughness dependence sign reversal in DL-SOT in our trilayer structure. [ABSTRACT FROM AUTHOR]

We study the effect of the oxide layer on the current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Hf|CoFeB|MgO (MgO-capped) or Hf|CoFeB|TaOx (TaOx-capped) structures. The effective fields corresponding to both the field-like and damping-like current-induced SOTs are characterized using electric transport measurements. Both torques are found to be significantly stronger in MgO-capped structures than those in TaOx-capped structures. The difference in fieldlike and damping-like SOTs in the different structures may be attributed to the different Rashbalike Hamiltonian, arising from the difference in the electric potential profiles across the oxide| ferromagnet interfaces in the two cases, as well as possible structural and oxidation differences in the underlying CoFeB and Hf layers. Our results show that the oxide layer in heavymetal |ferromagnet|oxide trilayer structures has a very significant effect on the generated SOTs for manipulation of ferromagnetic layers. These findings could potentially be used to engineer SOT devices with enhanced current-induced switching efficiency. [ABSTRACT FROM AUTHOR]

In this work, we experimentally study the temperature dependence of the perpendicular magnetic anisotropy (PMA) and of the voltage-controlled magnetic anisotropy (VCMA) in nanoscale MgO|CoFeB|Ta-based magnetic tunnel junctions. We demonstrate that the temperature dependences of both the PMA and the VCMA coefficient follow power laws of the saturation magnetization, but with different exponents. We also find that the linear dependence of the PMA on electric field is maintained over a wide temperature range, although the VCMA strength decreases faster as a function of temperature as compared to the PMA. Possible mechanisms leading to the different exponents are discussed. [ABSTRACT FROM AUTHOR]

We studied the impact of different insertion layers (Ta, Pt, and Mg) at the CoFeB∣MgO interface on voltage-controlled magnetic anisotropy (VCMA) effect and other magnetic properties. Inserting a very thin Mg layer of 0.1-0.3 nm yielded a VCMA coefficient of 100 fJ/V-m, more than 3 times higher than the average values of around 30 fJ/V-m reported in Ta∣CoFeB∣MgO-based structures. Ta and Pt insertion layers also showed a small improvement, yielding VCMA coefficients around 40 fJ/V-m. Electrical, magnetic, and X-ray diffraction results reveal that a Mg insertion layer of around 1.2 nm gives rise to the highest perpendicular magnetic anisotropy, saturation magnetization, as well as the best CoFe and MgO crystallinity. Other Mg insertion thicknesses give rise to either under- or over-oxidation of the CoFe∣MgO interface; a strong over-oxidation of the CoFe layer leads to the maximum VCMA effect. These results show that precise control over the Mg insertion thickness and CoFe oxidation level at the CoFeB∣MgO interface is crucial for the development of electric-field-controlled perpendicular magnetic tunnel junctions with low write voltage. [ABSTRACT FROM AUTHOR]

Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction(MTJ), electric field- or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultra-thin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is ~40% higher (19.8 ± 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 ± 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltage-controlled, ultralow-power, and high-density magnetic random access memory devices. [ABSTRACT FROM AUTHOR]

A chiral bobber is a localized three-dimensional magnetization configuration, terminated by a singularity. Chiral bobbers coexist with magnetic skyrmions in chiral magnets, lending themselves to new types of skyrmion-complementary bits of information. However, the on-demand creation of bobbers, as well as their direct observation remained elusive. Here, we introduce a new mechanism for creating a stable chiral bobber lattice state via the proximity of two skyrmion species with comparable size. This effect is experimentally demonstrated in a Cu2OSeO3/[Ta/CoFeB/MgO]4 heterostructure in which an exotic bobber lattice state emerges in the phase diagram of Cu2OSeO3. To unambiguously reveal the existence of the chiral bobber lattice state, we have developed a novel characterization technique, magnetic truncation rod analysis, which is based on resonant elastic x-ray scattering. [ABSTRACT FROM AUTHOR]