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Three-dimensional magnetic recording using microwave assisted magnetic recording (MAMR) has been proposed as one of the prospective recording technologies which uses a spin-torque oscillator (STO) as a reading sensor as well as a write-assisting device [1]. In the reading process using an STO, the reproducing waveform is given as temporal dynamics of magnetization [2]. The amplitude of STO oscillation waveform decreases as the STO comes close to the recorded dot of “0”, and the amplitude increases again as it leaves from the recorded dot of “0” [3]. The recorded dot “1” few influence on the amplitude. Therefore, we cannot discriminate whether the dead dot or recorded dot of “1”. However, the STO which reacts to the recorded dot of “1” can be produced by adjusting the resistance, the direct current, the external magnetic field, and so on [4]. In this research, we propose the envelope demodulation using two temporal magnetization dynamics from dual STO, and evaluate the bit error rate (BER) performance of R/W channel with dual STO by the computer simulation.

Magnetization switching of high-anisotropy nanomagnets by a small magnetic field is a key challenge in developing future magnetic nanodevices. In this paper, we experimentally demonstrate magnetization switching of a perpendicularly magnetized nanomagnet induced solely by an in-plane circularly polarized microwave magnetic field. Applying a microwave field with an amplitude below 5% of the anisotropy field induces large ferromagnetic resonance excitation, which results in magnetization switching even in the absence of a dc field. This kind of magnetization switching is induced by a microwave field with a duration of 0.5 ns and is clearly dependent on the rotation direction of the microwave field.

We use micromagnetic simulation to demonstrate layer-selective detection of magnetization directions from magnetic dots having two recording layers by using a spin-torque oscillator (STO) as a read device. This method is based on ferromagnetic resonance (FMR) excitation of recording-layer magnetizations by the microwave field from the STO. The FMR excitation affects the oscillation of the STO, which is utilized to sense the magnetization states in a recording layer. The recording layers are designed to have different FMR frequencies so that the FMR excitation is selectively induced by tuning the oscillation frequency of the STO. Since all magnetic layers interact with each other through dipolar fields, unnecessary interlayer interferences can occur, which are suppressed by designing magnetic properties of the layers. We move the STO over the magnetic dots, which models a read head moving over recording media, and show that changes in the STO oscillation occur on the one-nanosecond timescale., Comment: 6 pages, 4 figures

Microwave-assisted magnetization switching (MAS) has been proposed as a writing method for magnetic recording [1, 2].

Antiferromagnetically coupled (AFC) magnetic bilayer is a candidate media structure for high-density magnetic recording. Because the stray fields from the two magnetic layers of the AFC bilayer cancel each other out, switching field distribution originating from the stray fields from the adjacent data bits can be suppressed. Furthermore, in microwave-assisted magnetic recording (MAMR), which utilizes ferromagnetic resonance (FMR) excitation in a microwave field to reverse a high-anisotropy magnetic material, AFC media can suppress the distribution in FMR frequency originating from the stray fields and improve MAMR performance. In this study, we fabricate an AFC magnetic bilayer consisting of two Co/Pt multilayers with perpendicular magnetization. We use anomalous-Hall-effect-FMR in combination with a circularly polarized microwave field and carry out layer-selective analysis of FMR excitation of the two magnetic layers. We then investigate the switching behavior of an AFC bilayer nanodot in a microwave magnetic field. The switching field decreases with increasing microwave field frequency and increases abruptly at the critical frequency, and a large switching field reduction by applying a microwave field is demonstrated. This switching behavior is similar to that of a single-layer perpendicular magnetic nanodot, showing that the AFC structure does not hinder the microwave assist effect.

We introduce a method to read the data stored in a three-dimensional (3D) magnetic recording medium comprising plural storage layers. The readout is realized by selecting the storage layer with the ferromagnetic resonance frequency, and detecting the magnetization orientation with the ferromagnetic resonance absorption. This concept is experimentally confirmed with magnetic media comprising NiFe and CoFe layers. The feasibility of applying this method to a realistic 3D magnetic recording medium is discussed by calculating the absorption spectra of several storage layers with different perpendicular magnetic anisotropy constants.

Microwave assisted magnetic recording (MAMR) is one of the promising candidates for further high density magnetic recording system. In MAMR, precessional motion of magnetization is resonantly excited by rf fields with GHz frequency to switch magnetization in reduced writing fields.

We study the magnetization dynamics of a spin-torque oscillator (STO) and a magnetic dot coupled by a magnetic dipolar field using micromagnetic simulation with the aim of developing a read method in magnetic recording that uses magnetic resonance. We propose an STO with a perpendicularly magnetized free layer and an in-plane-magnetized fixed layer as a suitable STO for this resonance read method. When the oscillation frequency of the STO is near the ferromagnetic resonance (FMR) frequency of the magnetic dot, the oscillation amplitude of the STO decreases because FMR excited in the magnetic dot causes additional dissipation. To estimate the read rate of the resonance read method, we study the transient magnetization dynamics to the coupled oscillation state from an initial state where the STO is in a free-running state and the magnetic dot is in a stationary stable state. The STO shows transient dynamics within a time scale of 1 ns, which means that the STO can perform resonance reading with a response t...

Power spectra of a spin-transfer nano-oscillator, in which a reflection layer is included, are measured for current densities up to 1.2×107 A/cm2. A clear oscillation peak, which is slightly asymmetric with respect to the peak frequency, is observed at 5 GHz under the external field of 700 Oe. The large red shift of the peak frequency on increasing the current, which has been reported in nano-contact devices, is not observed. The relatively low oscillation frequencies as well as the absence of the large red shift indicate the reduction in the demagnetizing field in the free layer. The linewidth decreases with the current and is inversely proportional to the square of the precession amplitude of magnetization in accordance with the recent linear theories.

Microwave-assisted magnetization switching (MAS) is attracting much attention because of its applications in future magnetic recording techniques such as microwave-assisted magnetic recording and three-dimensional magnetic recording.[1-4] For the implementation of these applications, it is indispensable to elucidate large-amplitude magnetization excitation induced by a microwave magnetic field, which accounts for switching field reduction in MAS. In addition, for understanding thermally activated switching at finite temperature, it is necessary to estimate barrier height under microwave assistance.

Energy barrier height for magnetization switching is theoretically studied for a system with uniaxial anisotropy in a circularly polarized microwave magnetic field. A formulation of the Landau-Lifshitz-Gilbert equation in a rotating frame introduces an effective energy that includes the effects of both the microwave field and static field. This allows the effective-energy profiles to rigorously describe the switching paths and corresponding barrier height, which govern thermally activated magnetization switching under microwave assistance. We show that fixed points and limit cycles in the rotating frame lead to various switching paths and that under certain conditions, switching becomes a two-step process with an intermediate state.

A nano-scale magnetic sensor, in which magnetic resonance is induced by the injection of spin fluctuation, is proposed. The device is composed of a thin ferromagnetic layer (FM), a non-magnetic layer and a synthetic antiferromagnet (SyAF). Transverse spin fluctuation in conduction electrons, generated by the thermal fluctuation of magnetization in FM, is injected by current into SyAF. The fluctuation induces magnetic resonance in SyAF under an appropriate external field. The increase in resistance by resonance absorption is estimated, assuming the effective-field type interaction in SyAF. Magnetoresistance of more than 100% is expected for a 30 nm ×30 nm device.

A spin-valve transistor with an epitaxial Fe/Au/Fe [001] base was formed on nGaAs, of which the transfer ratio was 10/sup -3/ at 3 V with more than 100% magnetocurrent ratio. Both bottom and upper Fe layers show the uniaxial anisotropy with easy magnetization axis along [110], although the contribution of cubic anisotropy with [100] easy axis cannot be neglected for the upper Fe layer. Possibility of applying spin-valve transistors to read heads in the high-density magnetic recording is discussed.

We study microwave-assisted magnetization switching (MAS) of a perpendicularly magnetized nanomagnet with a diameter of 50 nm in a circularly polarized microwave magnetic field. The MAS effect appears when the rotation direction of the microwave field matches that of the ferromagnetic resonance excitation, and a large switching field decrease from 7.1 kOe to 1.5 kOe is demonstrated. In comparison with a linearly polarized microwave magnetic field, the circularly polarized microwave field induces the same MAS effect at half the microwave field amplitude, thereby showing its efficiency. We also examine MAS in the subnanosecond region and show that the magnetization switching can be induced by a microwave field with the duration of 0.2 ns.

We demonstrate microwave-assisted magnetization switching of a perpendicular magnetic nanodot in a microwave stray field from a spin-torque oscillator (STO). The switching field decreases when the STO is operated by applying a current. The switching field reduction is almost the same as that in a microwave magnetic field generated by a signal generator despite the fluctuations of the STO oscillation. The switching field distribution, however, is broader when the STO is used. We also examine the magnetization switching process in the nanosecond region by applying a nanosecond-order pulse current to the STO and measuring the STO signal waveform. The onset of the STO oscillation and subsequent assisted switching occur within a few nanoseconds.

Analytical expressions of the output power spectra are derived for spin-transfer nano-oscillators, by using the phase-noise theories, which have been developed for electronic oscillators. The output spectra, which are proportional to the power spectra of transverse component of magnetization, are calculated under the thermal fluctuation with a small amplitude approximation.

To meet the ever-increasing demand for data storage, future magnetic recording devices will need to be made three-dimensional by implementing multilayer recording. In this article, we present methods of detecting and manipulating the magnetization direction of a specific layer selectively in a vertically stacked multilayer magnetic system, which enable layer-selective read and write operations in three-dimensional magnetic recording devices. The principle behind the methods is ferromagnetic resonance excitation in a microwave magnetic field. By designing each magnetic recording layer to have a different ferromagnetic resonance frequency, magnetization excitation can be induced individually in each layer by tuning the frequency of an applied microwave magnetic field, and this selective magnetization excitation can be utilized for the layer-selective operations. Regarding media for three-dimensional recording, when layers of a perpendicular magnetic material are vertically stacked, dipolar interaction between multiple recording layers arises and is expected to cause problems, such as degradation of thermal stability and switching field distribution. To solve these problems, we propose the use of an antiferromagnetically coupled structure consisting of hard and soft magnetic layers. Because the stray fields from these two layers cancel each other, antiferromagnetically coupled media can reduce the dipolar interaction.

We used a magnetic tunnel junction (MTJ) to study the microwave-assisted switching (MAS) of a perpendicular magnetic nanodot. Because the sample structure enables the direct observation of fast magnetization dynamics through MTJ signals, the switching behavior is examined in relation with the induced magnetization excitation. By utilizing the MTJ signals, we observe several ferromagnetic resonance (FMR) modes and identify the lowest FMR mode as the cause of switching field reduction. The switching field decreases as the microwave frequency increases, and this frequency–magnetic field relationship coincides with that of the lowest FMR mode near a critical frequency. We also investigate the size dependence of MAS.

Current-induced magnetization dynamics in a trilayer structure composed of two ferromagnetic free layers and a nonmagnetic spacer is examined. Both free layers are treated as a monodomain magnetic body with an uniform agnetization. The dynamics of the two magnetizations is modeled by modified Landau-Lifshitz-Gilbert equations with spin-transfer torque terms. By solving the equations simultaneously, we discuss their various solutions in detail. We show that there exists the synchronous motion of two magnetizations among the various solutions; the magnetizations are resonantly coupled via spin-transfer torques and perform precessional motions with the same period. The condition to excite the synchronous motion depends on the difference between the intrinsic frequencies of the two ferromagnetic free layers as well as the magnitude of current., Comment: 7 pages, 13 figures, submitted to Japanese Journal of Applied Physics

Synchronized magnetization motion among the several magnetic layers composing a spin-torque oscillator (STO) is considered an effective way to improve spectral purity. To utilize this scheme in a MgO-based STO, we have fabricated a dual free-layer STO composed of a CoFeB free layer (FL), a MgO barrier layer, and a CoFe/Ru/CoFeB synthetic ferrimagnet free layer (SyF). Unlike conventional MgO-based STOs, this structure does not have an antiferromagnetic layer that pins the SyF, leading to a large-amplitude oscillation of magnetization in the SyF. The dual free-layer STO exhibits coherent microwave emissions with power spectrum density beyond 800 nW/GHz and narrow spectral linewidth below 5 MHz (Q-factor ≈ 2000). Macrospin simulations confirm that the stable oscillations originate from the synchronized magnetization motion of the FL and the SyF through dynamical dipolar coupling.

Technology for detecting the magnetization direction of nanoscale magnetic material is crucial for realizing high-density magnetic recording devices. Conventionally, a magnetoresistive device is used that changes its resistivity in accordance with the direction of the stray field from an objective magnet. However, when several magnets are near such a device, the superposition of stray fields from all the magnets acts on the sensor, preventing selective recognition of their individual magnetization directions. Here we introduce a novel readout method for detecting the magnetization direction of a nanoscale magnet by use of a spin-torque oscillator (STO). The principles behind this method are dynamic dipolar coupling between an STO and a nanoscale magnet, and detection of ferromagnetic resonance (FMR) of this coupled system from the STO signal. Because the STO couples with a specific magnet by tuning the STO oscillation frequency to match its FMR frequency, this readout method can selectively determine the magnetization direction of the magnet.

We fabricate perpendicular magnetic recording media comprising two antiferromagnetically coupled Co/Pt multilayers and investigate its magnetic properties by ferromagnetic resonance (FMR) measurement. In such media, the magnetizations of the two perpendicular magnets are designed to compensate each other in the remanent state in order to reduce the dipolar field, which is a limiting factor in high-density magnetic recording devices. We measure FMR absorption spectra of the media and estimate the magnetic anisotropy and interlayer exchange coupling. We also demonstrate that FMR measurement can be employed to read out the magnetization direction. The principles behind this readout method are different from those behind the conventional method of detecting the stray field from the media by means of a magnetoresistive sensor; therefore, the proposed readout method is applicable to magnetic recording media having zero remanent magnetization. We expand this readout scheme to three-dimensional magnetic recording with several vertically stacked recording layers. By providing each recording layer with a different FMR frequency, we experimentally confirm that layer selective readout is possible.

Current-induced magnetization excitations are studied for a spin-torque oscillator (STO) composed of a nanopillar with a perpendicular polarizer layer (PL), a MgO barrier layer, and a planar free layer (FL). By applying direct current and perpendicular-to-plane magnetic field, we measure resistance and radio-frequency electrical signal of the STO, which reflect magnetization motions of both PL and FL. Examination of the experimental results reveals that large-cone-angle magnetization oscillation occurs in the FL regardless of the current direction, whereas the PL magnetization shows principally either synchronized excitation with the FL oscillation or thermal-induced ferromagnetic resonance (FMR), depending on the current direction. Utilizing macrospin simulations, we show that hybridization of the excitation modes of the PL and FL through mutual dipolar field explains the magnetization dynamics. When the current flows from the PL to the FL, large-cone-angle oscillation of the FL magnetization occurs with the same rotation direction as that of FMR of the PL magnetization, leading to emergence of the synchronized excitation modes. On the other hand, when the current flows from the FL to the PL, the magnetization motions of the two layers have opposite rotation directions, and consequently, the PL and FL show their respective intrinsic excitation modes.

Amplitude fluctuations in an output signal of a tunnel-type spin-torque oscillator are examined by a time-domain measurement using a real-time oscilloscope (40 GS/s). Unsteady intermittent oscillation just above the threshold changes gradually to steady oscillation with increasing current. The amplitude fluctuation in the steady oscillation state is well described by a recent nonlinear theory, which is essentially based on a macrospin model under the thermal fluctuation, indicating that the fluctuation is attributed to the thermal magnetization fluctuation rather than to (nonthermal) mode instabilities.