1. Optimization of hafnium oxide for use in nanoparticle memories
- Author
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Verrelli, E. and Tsoukalas, D.
- Subjects
- *
FLASH memory , *HAFNIUM oxide , *NANOPARTICLES , *MAGNETRON sputtering , *ION traps , *QUANTUM tunneling , *SILICON oxide , *MATHEMATICAL optimization - Abstract
Abstract: In this work we investigate the dielectric properties of hafnium oxide deposited by RF magnetron sputtering with the purpose to implement it as control oxide for non-volatile memories based on metallic nanoparticles as charge storage centers. The influence of deposition temperature, ambient and post-deposition annealing onto the trapping properties of hafnium oxide, deposited over a tunneling silicon oxide layer, will be discussed and optimized conditions under which no charge trapping is observed into the dielectric stack will be presented. [Copyright &y& Elsevier]
- Published
- 2011
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