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This paper reports the influence of an ultrathin 1.5 nm atomic-layer-deposited HfO2 blanket layer as a gate dielectric on GaN high-electron-mobility transistors (HEMTs) grown on a 4H-SiC substrate. Transistors with a gate length of 250 nm and a source-to-drain distance of 3 µm were manufactured. The proposed technique involves HfO2 deposition at 250 ∘C prior to the gate metallization with no additional lithography steps. This approach reduced the drain lag by 83% compared to the conventional design with no gate dielectric. The HfO2 layer suppressed the parasitic lateral conduction from the gate, reduced surface trapping, and improved gate electrostatics. The manufactured devices exhibited nearly three orders of magnitude decreased surface leakage, better turn-on behavior, and improved cut-off frequency f T linearity by 16%. High quality metal-oxide interface formation was confirmed by the conductance method. Results demonstrate that the blanket HfO2 deposition is a promising approach to improve the current dispersion characteristics and gate electrostatics of GaN HEMTs without incurring major changes to the established fabrication techniques.

For most semiconductors, especially the visible-light-absorbing ones, the carrier diffusion length is significantly shorter than the light penetration depth, limiting their photoactivities. This limitation could be mitigated through the use of subwavelength semiconductor-based metasurfaces and metamaterials. In this paper, a large-scale compatible metasurface photocathode, made of densely packed disordered p-type chromium oxide (CrOX), is developed to be utilized in photoelectrochemical (PEC) hydrogen generation. For this purpose, first, tightly packed random Cr nanorods are fabricated using an oblique angle deposition technique. Afterward, an annealing step is applied to the sample to transform these metallic units into a semiconducting p-type CrOX-based metasurface. Based on the experimental characterization results and numerical simulations, the proposed design can provide strong light-matter interactions in an ultra-broadband-wavelength range, mainly due to its multidimensional random geometry and ultrasmall gap sizes. Finally, to substantiate the activity of the CrOXnanorods, a core-crown geometry is developed where the NiOXcapping layer catalyzes the hydrogen evolution reaction (HER). The proposed heterostructure metasurface absorber can impose photocurrent values as large as 50 μA cm-2with a photocurrent spectral response extended up to 500 nm. Moreover, the electrode shows outstanding operation under light irradiation for 9 hours. This work demonstrates a simple, scalable design strategy to fabricate low-cost and stable photocathodes for PEC hydrogen evolution. © 2022 American Chemical Society. All rights reserved.