Search

Your search keyword '"张宝顺"' showing total 9 results
Start Over Author "张宝顺" Topic materials science
9 results on '"张宝顺"'

2. Effect of Low Growth Pressure of HT-AlN Buffer on GaN Epilayer Grown on Si(111)

Author

张宝顺 Zhang Bao-shun, 李焘 Li Tao, 韩军 Han Jun, 邓旭光 Deng Xu-Guang, 史峰峰 Shi Feng-feng, 赵杰 Zhao Jie, 王凯 Wang Kai, 赵佳豪 Zhao Jia-hao, 邢艳辉 Xing Yan-hui, and 杨涛涛 Yang Tao-tao

Subjects
Growth pressure, Radiation, Materials science, business.industry, Optoelectronics, Condensed Matter Physics, business, Buffer (optical fiber), Electronic, Optical and Magnetic Materials
Published
2018
Full Text
View/download PDF

3. Influence of AlN Buffer Layer on Properties of GaN Epitaxial Film Grown on Si Substrate

Author

霍文娟 Huo Wen-juan, 张宝顺 Zhang Bao-shun, 范亚明 Fan Ya-ming, 陈翔 Chen Xiang, 崔明 Cui Ming, 钟林健 Zhong Lin-jian, 邢艳辉 Xing Yan-hui, and 韩军 Han Jun

Subjects
Radiation, Materials science, Si substrate, business.industry, Optoelectronics, Condensed Matter Physics, business, Epitaxy, Layer (electronics), Buffer (optical fiber), Electronic, Optical and Magnetic Materials
Published
2014
Full Text
View/download PDF

4. Influence of Oxide Aperture Structure on Lasing Performance for Vertical Cavity Surface Emitting Laser

Author

房丹 Fang Dan, 冯海通 Feng Haitong, 贾慧民 Jia Huimin, 苏瑞巩 Su Rui-gong, 唐吉龙 Tang Jilong, 张宝顺 Zhang Bao-shun, 梁静 Liang Jing, and 魏志鹏 Wei Zhi-peng

Subjects
Materials science, business.industry, Oxide aperture, Optoelectronics, Electrical and Electronic Engineering, business, Lasing threshold, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Vertical-cavity surface-emitting laser
Published
2019
Full Text
View/download PDF

5. Design and Fabrication of 980 nm Distributed Bragg Reflection Semiconductor Laser with High Power

Author

魏志鹏 Zhipeng Wei, 房丹 Dan Fang, 张宝顺 Baoshun Zhang, 唐吉龙 Jilong Tang, 李翔 Xiang Li, 方铉 Xuan Fang, 苏瑞巩 Ruigong Su, and 乔闯 Chuang Qiao

Subjects
Fabrication, Materials science, business.industry, Bragg's law, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Power (physics), law.invention, Semiconductor, law, Optoelectronics, Electrical and Electronic Engineering, business
Published
2019
Full Text
View/download PDF

6. Process Research of Wedge Mode Size Converter

Author

方铉 Fang Xuan, 王筱 Wang Xiao, 魏志鹏 Wei Zhi-peng, 房丹 Fang Dan, 孙天玉 Sun Tian-yu, 王登魁 Wang Dengkui, 刘俊成 Liu Jun-cheng, 唐吉龙 Tang Jilong, and 张宝顺 Zhang Bao-shun

Subjects
Materials science, Process research, Acoustics, Wedge (geometry), Atomic and Molecular Physics, and Optics
Published
2019
Full Text
View/download PDF

7. Growth of Highly Resistive GaN by MOCVD

Author

汪加兴 Wang Jia-Xing, 范亚明 Fan Ya-ming, 邢艳辉 Xing Yan-hui, 张宝顺 Zhang Bao-shun, 邓旭光 Deng Xu-Guang, 陈翔 Chen Xiang, and 韩军 Han Jun

Subjects
Radiation, Materials science, business.industry, Nucleation, High-electron-mobility transistor, Chemical vapor deposition, Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, Optoelectronics, Metalorganic vapour phase epitaxy, Thin film, business, Layer (electronics), Sheet resistance
Abstract

High resistance GaN thin film was grown on sapphire(0001) substrates using metal-organic chemical vapor deposition(MOCVD).Effect of the GaN nucleation layer growth parameters,including reactor pressure,species of carrier gas and growth time,on the electrical characteristics of the following grown GaN buffer was investigated.It is found that GaN films epitaxially grown on the GaN nucleation layers deposited at a relatively lower pressure tend to have a high resistance.High resistance GaN buffer layer can also be prepared by extending growth time of the nucleation layer(i.e.increasing the thickness of nucleation layer) or by using N2 instead of H2 as carrier gas during the growth of nucleation layer.GaN layers with a sheet resistance as high as 2.49×1011 Ω/□ was obtained.These layers were used as templates for the preparation of epi-wafers with AlGaN/AlN/GaN hetero structures,which were used to fabricate high electron mobility transistors(HEMTs).The highest mobility of these samples reaches to 1 230 cm2/(V·s).

Published
2013
Full Text
View/download PDF

8. Etching Process of 980 nm Tapered Semiconductor Laser

Author

方铉 Fang Xuan, 魏志鹏 Wei Zhi-peng, 苏瑞巩 Su Rui-gong, 唐吉龙 Tang Jilong, 张宝顺 Zhang Bao-shun, 王登魁 Wang Dengkui, 房丹 Fang Dan, and 乔闯 Qiao Chuang

Subjects
Materials science, Semiconductor, business.industry, Etching (microfabrication), law, Scientific method, Optoelectronics, business, Laser, Atomic and Molecular Physics, and Optics, law.invention
Published
2018
Full Text
View/download PDF

9. Antireflective silicon based microstructures for the mid- and long-wavelength infrared

Author

吴启花 Wu Qihua, 张宝顺 Zhang Baoshun, 白 煜 Bai Yu, 熊 敏 Xiong Min, and 黄 勇 Huang Yong

Subjects
Materials science, Infrared, business.industry, Aerospace Engineering, Microstructure, Atomic and Molecular Physics, and Optics, law.invention, Silicon based, Long wavelength, Anti-reflective coating, Space and Planetary Science, law, Optoelectronics, Electrical and Electronic Engineering, business
Published
2017
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results