1. Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis
- Author
-
Victor Chien-Pin Lu, Jyh-Shyang Wang, Kuan-Cheng Chiu, Ji-Lin Shen, Chii-Bin Wu, and Wilson Yeung-Sy Su
- Subjects
010302 applied physics ,Electron mobility ,Multidisciplinary ,Materials science ,Condensed matter physics ,Dopant ,Electronics, photonics and device physics ,Doping ,lcsh:R ,lcsh:Medicine ,02 engineering and technology ,Electron ,021001 nanoscience & nanotechnology ,01 natural sciences ,Article ,Hysteresis ,Nanoscale devices ,Hall effect ,0103 physical sciences ,Charge carrier ,lcsh:Q ,Condensed-matter physics ,0210 nano-technology ,lcsh:Science ,Quantum well - Abstract
Temperature (T = 40 ~ 300 K) dependence of Hall-effect analysis on the dual Si-δ-doped AlGaAs/InGaAs/AlGaAs quantum-well (QW) structures with various space layer thicknesses (tS = 5, 10 and 15 nm) was performed. An interesting hysteresis behavior of electron sheet concentration [n2D(T)] was observed for tS = 10 and 15 nm but not for tS = 5 nm. A model involving two different activation barriers encountered respectively by electrons in the active QW and by electrons in the δ-doped layers is proposed to account for the hysteresis behavior. However, for small enough tS (= 5 nm ≤ 2.5 s, where s = 2.0 nm is the standard deviation of the Gaussian fit to the Si-δ-doped profile), the distribution of Si dopants near active QW acted as a specific form of “modulation doping” and can not be regarded as an ideal δ-doping. These Si dopants nearby the active QW effectively increase the magnitude of n2D, and hence no hysteresis curve was observed. Finally, effects from tS on the T-dependence of electron mobility in active QW channel are also discussed.
- Published
- 2020