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Silicon nanochannel plates (NCPs) are efficient positron to positronium converters and are employed as sources of abundant cold positronium. Characterization of the emitted positronium energy spectrum is crucial to assess the NCP performance and support their further optimization. We present here a Time-of-Flight (ToF) system optimized to measure the energy spectrum of positronium produced by NCP converters held at cryogenic temperatures. The ToF-apparatus was tested by implanting 7 keV positrons into NCPs at room temperature before performing ToF experiments using positron implantation energies of 7 and 11 keV into NCPs held at 20 K. At these conditions we succeeded in determining the energy spectrum of the positronium escaping from the nanochannels into the vacuum down to an energy of 10 meV.

Results from Pt model catalyst surfaces have demonstrated that surface defects, in particular surface concavities, can improve the oxygen reduction reaction (ORR) kinetics. It is, however, a challe...

Doppler broadening positron annihilation spectroscopy depth profiles were collected on photochromic YOxHy thin films. In situ UV illumination of photochromic semiconductor YOxHy films leads to an increase in S-parameter and a large reduction in W-parameter, possibly caused by a change in the charge state of vacancies or the growth of hydrogen-rich metallic Y(Ox)Hy clusters, albeit that vacancy formation or changes in positronium formation during illumination might also play a role. Intriguingly, both the S- and W-parameters increase during thermal bleaching, indicating that another process takes place. The Doppler parameters do not return to their initial values after complete thermal bleaching, suggesting that persistent local rearrangements of vacancies and possibly hydride ions have occurred during the full photodarkening-thermal bleaching cycle. Positron annihilation lifetime spectroscopy shows that a small fraction of positronium is formed in as-deposited YOxHy films, indicating that the films contain some nanopores.

We experimentally studied the formation of vacancy clusters and oxygen related defects in uranium oxide (UOx) thin films (

We report the instrumentation of a new positron diffractometer that is connected to the high-intensity positron source NEPOMUC. Crucial elements for the adaption of the positron beam are presented, which include the magnetic field termination, the optional transmission-type remoderator for brightness enhancement and the electrostatic system for acceleration and beam optics. The positron trajectories of the remoderated and the twofold remoderated beam have been simulated to optimize the system, i.e. to obtain a coherent beam of small diameter. Within a first beamtime we tuned the system and characterized the direct beam. For the twofold remoderated beam of 10keV energy, we experimentally observe a beam diameter of d < 1.3mm, which agrees well with the simulation., 10 pages, 6 figures

Friction stir welding is an innovative welding technology that is often employed to weld aluminum alloys of the 2xxx-series. These alloys are primarily used in the aerospace industry to join structural parts or tanks. For these applications, high quality requirements have to be met. In a previous study, it was shown that controlling the welding temperature is one key to ensuring the quality of the welds. It was observed that the tensile strength varies depending on the welding temperature and the welding speed. In this paper, Positron Annihilation Spectroscopy (PAS) with a scanning positron beam was applied to detect crystallographic defects and changes of the microstructure of friction stir welds. The results were compared to optical microscopy and to hardness maps. Hereby, vacancy formation in the cross section of friction stir welds could be observed. Furthermore, it could be demonstrated that the state of the precipitates is the primary determinant for the mechanical properties of the welds. Finally, the observations made through PAS were employed to explain the trends in the mechanical properties, which were observed in the previous study. In particular, the varying ultimate tensile strength (UTS) could be clearly attributed to dissolution and re-precipitation phenomena, which occur during and after welding.

This report presents a study about the morphology of a cross-linked aromatic polyamide (PA) film in its dry and wet state using small-angle neutron scattering (SANS), positron annihilation lifetime spectroscopy (PALS), and scanning electron microscopy (SEM). PA is used as active skin layer for reverse osmosis membranes and determines the selectivity of the membrane with respect to water and salt molecules. This selectivity of PA is largely determined from its morphology. The PA film scatters the neutrons much stronger and shows a different profile as expected from randomly distributed nanoscopic large pores. SANS contrast variation, using supercritical CO2 as contrast medium, confirms that pores are the only scattering centers. The analysis shows that interconnected pores of an average radius of about 16 A determine the scattering. The pores are formed as a network of channels showing a fractal structure. PALS determines pores of ∼6 A diameter representing the diameter of such channels. The volume fraction of the pores is estimated as ∼10% which after water up-take increases by ∼30% due to slightly swelling of the pores.

Two processes for crosslinking polyvinyl alcohol (PVA) with sulfosuccinic acid (SSA) and thermal crosslinking were used to fabricate a proton exchange membrane (PEM). Such PEMs are used in different fields involving fuel cell applications. The crosslinking reaction between PVA and SSA was confirmed using Fourier-transform infrared (FTIR) spectroscopy. The characterization of the prepared membranes, namely, ion exchange capacity (IEC), thermal analyses, water uptake, and ionic conductivity, was carried out. The IEC of the prepared membranes was found to be between 0.084 and 2.086 mmol g-1, resulting in an essential increase in the ionic conductivity. It was observed that the ionic conductivity was in the range of 0.003-0.023 S cm-1, depending on both temperature and SSA content. From the thermogravimetric analysis (TGA) results, it was revealed that the thermal stability of the crosslinked membranes improved. Moreover, water uptake decreased with increasing SSA content. Positron annihilation lifetime spectroscopy (PALS) was used to study the microstructure of the PVA/SSA membranes and their distribution at different ambient temperatures and relative humidity (RH) values. At room temperature, no significant change was observed in the free-volume holes up to 15 wt% SSA; thereafter, the size of the free-volume holes increased with the SSA content. The PALS results show that at different humidity values, the size of the free-volume holes for crosslinked PVA/SSA membranes is lower than those for Nafion membranes, i.e., the gas permeability for the prepared PVA/SSA membranes is less than that for the Nafion membrane. In addition, a strong correlation between the water uptake, ionic conductivity, tensile strength, and free-volume holes was observed.

Graphene laminated (GL) coatings formed by stacked few layer graphene (FLG) nanocrystals were deposited on low-density polyethylene (PE) films by the mechanical rubbing technique. Molecular transport through the bilayer membrane was studied by the gas phase permeation technique by monitoring the CO2, N-2 and H-2(2) transport fluxes in transient conditions. The results evidenced that the transport exhibited anomalous character. The experimental data could be reproduced assuming that the penetrant concentration in the GL coating, c(int)(t), reached a saturation value c(s) following compressed exponential kinetics c(int)(t) = c(s)[1 - e(-(lambda relt)beta)]. The relaxation time tau(rel) = 1/lambda(rel) showed thermally activated behavior, and its value increased with the kinetic diameter of the penetrant molecules. The critical exponent beta = 1.5 +/- 0.1 for CO2 and N-2 and beta = 2.0 +/- 0.1 for H-2(2) did not change with temperature. Positron annihilation lifetime spectroscopy (PALS) analysis indicated that the average cross-section (h(g)) of the cavities in the GL coating exhibited comparable size to the kinetic diameter (sigma(k)) of the penetrant molecules. The results could be explained by assuming that the molecular infiltration in the GL structure occurred in nano-channels having distributed path lengths where the penetrant transport obeyed a configurational diffusion mechanism.

Vacancy-type defects in GaN with different carbon concentrations ([C] = 2 × 1016 − 1 × 1018 cm− 3) were probed using monoenergetic positron beams. 1.5-μm-thick GaN layers were grown on Si substrates by metalorganic vapor phase epitaxy. Measurements of Doppler broadening spectra and positron lifetimes indicated that the major defect species in the GaN layers was a Ga vacancy coupled with nitrogen vacancies. The positron trapping rate of the defects decreased with increasing [C], which was attributed to the downward shift of the Fermi level position due to C acceptor and the resultant change in the defect charge state (neutral to positive). Under illumination, the defect charge state was changed from positive to neutral, which was attributed to the trapping of the excited electrons by the defects (V+ + e− → V0). The effect of illumination was suppressed for the GaN layer with [C] ≥ 1018 cm− 3, which was ascribed to the excellent electron trapping property of C in GaN.

Vacancy-type defects in Mg-implanted GaN were probed using monoenergetic positron beams. Mg+ ions were implanted to provide box profiles with Mg concentrations [Mg] of 1017-1019 cm-3. For as-implanted samples, the major defect species was determined to be Ga-vacancy (VGa) related defects such as divacancy (VGaVN) and/or their complexes with impurities. For Mg-implanted samples, an agglomeration of vacancies started at 800-1000°C annealing, leading to the formation of vacancy clusters such as (VGaVN)3. For the sample with [Mg]=1019 cm-3, the trapping rate of positrons to the vacancies decreased with increasing annealing temperature (≥1100°C), which was attributed to the change in the charge state of vacancy-type defects from neutral to positive (or negative to neutral) due to the activation of Mg. For Mg- and H-implanted samples, the hydrogenation of vacancy-type defects started after 800°C annealing. Comparing with the annealing behavior of defects for the samples without H-implantation, the clustering of vacancy-type defects was suppressed, which can be attributed to the interaction between Mg, H, and vacancies.

Oxide dispersion strengthened steels are candidate materials for nuclear reactor applications due to a powerful combination of properties, such as reduced activation, high-temperature strength and increased creep resistance. The dispersion of nanometric oxide particles in the steel matrix may also enhance radiation resistance by acting as trapping sites for irradiation induced defects. In this work, an Fe–14Cr–2 W–0.3-Ti–0.3Y2O3 (wt%) steel and a model Fe-14Cr (wt%) alloy were sequentially irradiated with He+ and Fe+ ions up to 15 dpa and 8000 appm to simulate fusion radiation damage. Their microstructural stability was investigated by positron annihilation spectroscopy and transmission electron microscopy. Transmission electron microscopy studies show that under these irradiation conditions there are no significant changes in the mean size, qualitative chemical composition and number density of nanoparticles, although the irradiation appears to induce a slight coarsening of the smaller nanoparticles. Both materials exhibit very small (

The APEX (A Positron Electron eXperiment) collaboration aims to magnetically confine a low-temperature electron-positron pair plasma. By using a pair of ExB plates, positrons generated by the NEPOMUC facility are drift-injected into the confinement field created by a supported permanent magnet. Fine-tuning the fields generated by electrodes and magnetic coils increased the injection efficiency to 100% and positron confinement times to more than 1s. A newly installed electron gun has been used to inject electrons, guided alongside the positron beam, into the confinement volume. This contribution describes the recent upgrades required for the first dual species experiments.

Microstructural changes of a commercial Al–Mg–Si alloy were studied during artificial aging by in situ Doppler broadening spectroscopy using a high-intensity positron beam. The in situ positron annihilation characteristics at high temperatures differ considerably from the conventionally applied ex situ measurements at low temperatures. Therefore, a more comprehensive view of precipitation processes in Al–Mg–Si alloys is obtained. Further, in situ positron–electron annihilation techniques allow for an investigation of aging processes with increased sensitivity. For the artificial aging temperatures of 180 °C and 210 °C pronounced variations of the Doppler broadening S-parameter reveal (i) the evolution of clusters into larger precipitates and (ii) the time of the formation of ” precipitates and the role of vacancies in connection to this. Towards higher aging times, the transformation from coherent ” to semi-coherent ’ precipitates could be verified. Additional insights are gained by in situ measurements of the S-parameter during the solution heat treatment of the previously overaged sample. Here, the S-parameter reveals both the dissolution of precipitates starting from temperatures of 364 °C and the thermal generation of vacancies.

Depth resolved positron annihilation spectroscopy (PAS) has been employed to characterize the 1.2 MeV Ar and 800 keV O ion beam induced defects in ZnO. The first extraordinary result was the observation of defects in ion beam irradiated ZnO beyond the maximum penetration depth of the respective ions. The positron annihilation results revealed the formation of vacancy clusters consisting of both VZn and VO in ZnO which are saturated at a threshold radiation dose (defined as nuclear energy loss, Sn × fluence). From the photoluminescence (PL) spectra it has been observed that the PL intensity at the band edge degraded with the increase of open volume defects in ZnO. The evolution of the 2.4 eV PL, which is linked with the oxygen vacancies, is more significant due to Ar irradiation than the oxygen irradiation.

Vacancy-type defects in Mg-implanted GaN and an Al 2 O 3 /GaN structure were probed using monoenergetic positron beams. In Mg-implanted GaN, the major defect species was a complex of a Ga-vacancy and a nitrogen vacancy. After annealing above 1000°C, the major defect species was changed to vacancy clusters due to the agglomeration of vacancies. The carrier trapping/detrapping properties of the vacancy-type defects and their time dependences were also revealed. Al 2 O 3 films with a thickness of 25 nm were deposited on GaN by atomic layer deposition. For the samples annealed at 800°C and 900°C, the vacancy-type defects were found to be introduced up to a depth of 40–50 nm from the Al 2 O 3 /GaN interface, which can be attributed to the interatomic diffusion between the Al 2 O 3 film and the GaN substrate. The present research showed that positron annihilation technique can be applied for the study of annealing behaviors of vacancies in the GaN-based device structure. A knowledge obtained by this technique is useful for an optimization of the fabrication process of GaN power devices.

The CDB-spectrometer at NEPOMUC enables spatially resolved Doppler Broadening Spectroscopy of the electron-positron annihilation line with a lateral resolution of up to 200~$\mu$m (FWHM). We have applied this technique for studying single particles of silica gel dependent on loading with an altering amount of the ionic liquid [C2MIM][NTf2]. Our results reveal a strong correlation between the observables of DBS and the loading factor which presumably arises from a smaller inner surface of voids in loaded silica gel.

We report on time-dependent Positron annihilation induced Auger Electron Spectroscopy (PAES) study on 0.5 monolayers (ML) Ni on polycrystalline Pd accompanied by complementary X-ray induced Photoelectron Spectroscopy (XPS). The normalized PAES spectra showed a significant decrease in the Ni intensity and an increase in the Pd intensity as a function of time. To rule out varying influence on the elements e.g. from surface contaminates due to the residual gas, a time-dependent XPS analysis was performed on pure Ni and Pd as well as to analyze the main contaminants C and O. The O fraction was found to be constant within the measurement time and the time constants for C significantly differ from those of Ni and Pd in the PAES data. Consequently, it was concluded that the PAES data show a superposition of C contamination and structural changes at the surface of Ni/Pd.

In this study the structure and evolution of vacancy type defects in lithium ion batteries are investigated in respect of crystallographic properties. The relation between positron annihilation and electronic structure is discussed in terms of structural dynamics during the lithiation process. Samples of Li1−xNi1/3Mn1/3Co1/3O2 (NMC-111) electrodes with decreasing lithium content (x = 0–0.7) covering the whole range of state of charge were electrochemically prepared for the non-destructive analysis using positron coincidence Doppler broadening spectroscopy (CDBS). The positron measurements allowed us to observe the evolution of the defect structure caused by the delithiation process in the NMC-111 electrodes. The combination of CDBS with X-ray diffraction for the characterization of the lattice structures enabled the analysis of the well-known kinetic-hindrance-effect in the first charge-discharge cycle and possible implications of vacancy ordering. In particular, CDBS revealed the highest degree of relithiation after discharge to 3.0 V at 55 °C. For the first time, we report on the successful application of CDBS on NMC-111 electrodes yielding new insights in the important role of defects caused by the delithiation process and the kinetic hindrance effect.

A brief report is given on recent studies of the atomistic processes during charging of battery cathode material LixCoO2 by means of magnetometry and positron annihilation. A set-up for operando magnetometry is implemented which, for the first time, allowed to continuously monitor the distinct variation of the magnetic susceptibility χ of LixCoO2 which occurs during consecutive charging and discharging cycles. The variation of χ with Li+ content in the concentration range 1>x≥0.77 arises from a variation of the electronic density of states and from electronic correlation effects. The χ (x)-behaviour for xx)-variations in this concentration regime. First measurements on LixCoO2 thin-films performed at the positron beam line NEPOMUC of FRM II at the Heinz Maier-Leibnitz neutron source will be presented.

Nature reveals a great variety of inorganic-organic composite materials exhibiting good mechanical properties, high thermal and chemical stability, and good barrier properties. One class of natural bio-nanocomposites, e.g. found in mussel shells, comprises protein matrices with layered inorganic fillers. Inspired by such natural bio-nanocomposites, the cationic recombinant spider silk protein eADF4(κ16) was processed together with the synthetic layered silicate sodium hectorite in an all-aqueous setup. Drop-casting of this bio-nanocomposite resulted in a thermally and chemically stable film reflecting a one-dimensional crystal. Surprisingly, this bio-nanocomposite coating was, though produced in an all-aqueous process, completely water insoluble. Analyzing the structural details showed a low inner free volume due to the well-oriented self-assembly/alignment of the spider silk proteins on the nanoclay surface, yielding high oxygen and water vapor barrier properties. The here demonstrated properties in combination with good biocompatibility qualify this new bio-nanocomposite to be used in packaging applications.

Different ODS RAF steels with nominal composition Fe–14Cr–2W–0.3-Ti–0.3Y2O3 (wt%) and a model Fe–14Cr (wt%) alloy have been subjected to single Fe+ or He+ ion irradiations to simulate the effect of a fusion environment at different doses and temperatures. The irradiation induced open volume defects have been characterised by positron annihilation spectroscopy and transmission electron microscopy. For low temperature Fe+ irradiations, positron annihilation spectroscopy results show a high concentration of irradiation induced vacancy clusters, much more evident in the model alloy as compared to the ODS steels. The extent of damage due to He+ irradiations at RT and high temperatures is considerably lower than for the Fe+ irradiations. Regardless of the temperature He+ irradiations introduced changes in the chemical environment of open-volume positron traps possibly due to the creation of He-vacancy complexes. Positron annihilation spectroscopy results also suggest that irradiation induced vacancy-type defects in ODS steels are not associated with nanoparticles but are mainly in the ferritic matrix. The presence of irradiation induced bubbles was studied after He+ irradiation at high temperatures. Small bubbles were observed, being smaller in the ODS steels as compared to the model alloy.

Vacancy-type defects in AlN films were probed by using monoenergetic positron beams. The AlN films were deposited on sapphire substrates by using a radio-frequency sputtering technique. Epitaxial films grown by metalorganic vapor phase epitaxy on the sputtered AlN films were also characterized. For the sputtered AlN, the major defect species was identified to be complexes between Al-vacancy and oxygen atoms located at nitrogen sites. Vacancy clusters were introduced after annealing at 1300 °C in the N2 atmosphere but their concentration decreased with a higher annealing temperature. The vacancy–oxygen complexes, however, still existed in the AlN film after annealing at 1700 °C. For the AlN epitaxial films, the concentration of vacancy clusters increased as the growth temperature increased up to 1300 °C but it decreased with the post-growth annealing at 1700 °C.

We developed a new scanning positron microbeam for spatially resolved (coincident) Doppler broadening spectroscopy ((C)DBS) at the neutron induced positron source Munich (NEPOMUC). For this purpose, positrons are moderated three times: First, positrons generated by pair production are self-moderated in annealed polycrystalline Pt foils inside the beam tube housing the positron source NEPOMUC. Then, the brightness of the primary 1 keV positron beam with 109 moderated positrons per second is enhanced by a W(100) single crystal remoderator operated in back reflection geometry. Finally, in the upgraded CDB spectrometer we apply a 100 nm thin Ni(100) foil acting as transmission remoderator to generate a positron microbeam with a minimum beam diameter of 33 µm. We demonstrate the potential of laterally resolved DBS by imaging the defect distribution around a laser beam weld of the high-strength age-hardenable Al alloy AlCu6Mn. CDBS was applied with unprecedented spatial resolution to reveal the dissolution of Cu rich precipitates and the formation of Al-vacancy-Cu-complexes.We developed a new scanning positron microbeam for spatially resolved (coincident) Doppler broadening spectroscopy ((C)DBS) at the neutron induced positron source Munich (NEPOMUC). For this purpose, positrons are moderated three times: First, positrons generated by pair production are self-moderated in annealed polycrystalline Pt foils inside the beam tube housing the positron source NEPOMUC. Then, the brightness of the primary 1 keV positron beam with 109 moderated positrons per second is enhanced by a W(100) single crystal remoderator operated in back reflection geometry. Finally, in the upgraded CDB spectrometer we apply a 100 nm thin Ni(100) foil acting as transmission remoderator to generate a positron microbeam with a minimum beam diameter of 33 µm. We demonstrate the potential of laterally resolved DBS by imaging the defect distribution around a laser beam weld of the high-strength age-hardenable Al alloy AlCu6Mn. CDBS was applied with unprecedented spatial resolution to reveal the dissolution of C...

Vacancy-type defects in Mg-implanted GaN were probed using monoenergetic positron beams. For the samples after annealing at 1300°C, the line shape parameter S and the positron lifetime increased under illumination with a 325-nm He-Cd laser. The observed increase in the trapping rate of positrons by vacancies was associated with the trapping of the excited electrons by the defects. Native defects in GaN grown on Si substrate were also studied. A similar illumination effect on the positron annihilation parameters was observed for GaN with the carbon concentration of 2×1016 cm−3. From the relationship between S and the photon energy, it was found that the transition of an electron from a carbon atom to the vacancies plays an important role in the charge shift of the vacancies under illumination.

Positron annihilation depth-profiling is used as an innovative tool to monitor the evolution of vacancy defects in two series of ZnO:Al transparent conductive oxide (TCO) layers for Cu(In,Ga)Se2 (CIGS) solar cells under accelerated degradation at 85 °C/85% relative humidity. The first series of ZnO:Al layers are deposited directly on flat glass substrates, leading to low densities of (extended) grain boundaries in the ZnO:Al. These ZnO:Al layers only show an increase in open volume upon degradation in the near-surface range. The second series of ZnO:Al layers are deposited on the more corrugated surface of CdS/CIGS/Mo solar cells, and show, on the other hand, a pronounced formation of open volume throughout the layer. Its depth-dependence is consistent with in-diffusion of molecules such as H2O and CO2 into the ZnO:Al layer via the grain boundaries, as primary driver for the degradation. The detected time-dependence of the growth of open volume at the grain boundaries in the ZnO:Al TCO layer matches the time scale of the observed reduction in solar cell efficiency and series resistance, suggesting that the generated open volume induces a significant barrier against charge carrier transport.

Positron annihilation lifetime spectroscopy (PALS) and Doppler broadening positron annihilation spectroscopy DB-PAS) depth profiling demonstrate pronounced growth of vacancy clusters at the grain boundaries of as-deposited Al-doped ZnO films deposited as transparent conductive oxide (TCO) on Cu(In, Ga)Se2 (CIGS) solar cells upon accelerated degradation at 85 ◦C/85% relative humidity. Quantitative fractions of positrons trapped either in the vacancy clusters at the grain boundaries or in Zn monovacancies inside the grains of ZnO:Al were obtained by detailed analysis of the PALS data using a positron trapping model. The time and depth dependence of the positron Doppler depth profiles can be accurately described using a planar diffusion model, with an extracted diffusion coefficient of 35 nm2/hour characteristic for in-diffusion of molecules such as H2O andCO2 into ZnO:Al TCO films via the grain boundaries, where they react with the ZnO:Al. This leads to increased open volume at the grain boundaries that imposes additional transport barriers and may lead to charge carrier trapping and nonradiative recombination. Simultaneously, a pronounced increase in series resistance and a strong reduction in efficiency of the ZnO:Al capped CIGS solar cells is observed on a remarkably similar timescale. This strongly indicates that these atomic-scale processes of molecular in-diffusion and creation of open volume at the grain boundaries play a key role in the degradation of the solar cells. PhySH: Solar Cells, Positron Annihilation Spectroscopy, Grain Boundaries, Vacancies, Thin Films, Diffusion, Electrical Properties, Solid State Chemistry, Optoelectronics

The oxygen deficiency $\ensuremath{\delta}$ in ${\mathrm{YBa}}_{2}{\mathrm{Cu}}_{3}{\mathrm{O}}_{7\ensuremath{-}\ensuremath{\delta}}$ (YBCO) plays a crucial role for affecting high-temperature superconductivity. We apply (coincident) Doppler broadening spectroscopy of the electron-positron annihilation line to study in situ the temperature dependence of the oxygen concentration and its depth profile in single crystalline YBCO film grown on ${\mathrm{SrTiO}}_{3}$ (STO) substrates. The oxygen diffusion during tempering is found to lead to a distinct depth dependence of $\ensuremath{\delta}$, which is not accessible using x-ray diffraction. A steady state reached within a few minutes is defined by both, the oxygen exchange at the surface and at the interface to the STO substrate. Moreover, we reveal the depth-dependent critical temperature ${T}_{\mathrm{c}}$ in the as prepared and tempered YBCO film.

The surface of a polycrystalline Pd-substrate covered with (sub-) monolayers of Ni was investigated with Positron-annihilation induced Auger Electron Spectroscopy (PAES). Comparative studies using conventional AES induced by electrons and X-rays showed the outstanding surface sensitivity of PAES. Time-dependent PAES was performed on a 0.5 ML Ni cover layer on Pd and compared with conventional X-ray induced Photoelectron Spectroscopy (XPS) in order to observe changes in the elemental composition of the surface. The PAES results appear to show a migration of Ni atoms into the Pd substrate, whereas the Ni signal shows a decrease of 12% within 13 h with respect to the initial value.

We present studies on the free volume of silica gel dependent on water absorption and on loading with a different amount of the ionic liquid (IL) [C2 MIM][NTf2] using positron lifetime spectroscopy (PLS). The found two long lifetime components (2 and 10–20 ns) are attributed to the annihilation of ortho-positronium (o-Ps) in micropores of different size. The application of a semi-empirical quantum mechanical model allowed us to correlate the measured o-Ps lifetimes to the absolute mean size of the micropores by approximation with a spherical shape. The mean diameter of the pores in the pure silica gel could, hence, be determined to 1.72(6) nm. IL loading with up to 70 vol% lead to the formation of smaller voids with a mean diameter of 1.28(4) nm according to a reduction of the mean pore volume by about 60%. In addition, the accumulation of H2 O molecules from the surrounding air inside the pores could be observed in-situ by time dependent PLS.

This paper describes the design of a compact levitated superconducting coil for the production of a magnetic dipole field to eventually trap positron-electron plasma. The closed 300 turn coil is to be constructed from Bi-2223 high-Tc superconducting tape, directly cooled on a cryogenic cold head (with thermal contact enhanced using helium gas), and inductively energized with a second superconducting coil mounted on the same cold head. Levitation will be achieved from above using a water-cooled copper coil outside the vacuum chamber and its current will be feedback controlled using vertical position information from a laser ranger.

Previous studies have shown that positron-annihilation spectroscopy is a highly sensitive probe of the electronic structure and surface composition of ligand-capped semiconductor Quantum Dots (QDs) embedded in thin films. Nature of the associated positron state, however, whether the positron is confined inside the QDs or localized at their surfaces, has so far remained unresolved. Our positron-annihilation lifetime spectroscopy (PALS) studies of CdSe QDs reveal the presence of a strong lifetime component in the narrow range of 358-371 ps, indicating abundant trapping and annihilation of positrons at the surfaces of the QDs. Furthermore, our ab-initio calculations of the positron wave function and lifetime employing a recent formulation of the Weighted Density Approximation (WDA) demonstrate the presence of a positron surface state and predict positron lifetimes close to experimental values. Our study thus resolves the longstanding question regarding the nature of the positron state in semiconductor QDs, and opens the way to extract quantitative information on surface composition and ligand-surface interactions of colloidal semiconductor QDs through highly sensitive positron-annihilation techniques., Comment: 14 pages, 3 figures

Heusler compounds exhibit a wide range of different electronic ground states and are hence expected to be applicable as functional materials in novel electronic and spintronic devices. Since the growth of large and defect-free Heusler crystals is still challenging, single crystals of Fe2TiSn and Cu2MnAl were grown by the optical floating zone technique. Two positron annihilation techniques -Angular Correlation of Annihilation Radiation (ACAR) and Doppler Broadening Spectroscopy (DBS)- were applied in order to study both, the electronic structure and lattice defects. Recently, we succeeded to observe clearly the anisotropy of the Fermi surface of Cu2MnAl, whereas the spectra of Fe2TiSn were disturbed by foreign phases. In order to estimate the defect concentration in different samples of Heusler compounds the positron diffusion length was determined by DBS using a monoenergetic positron beam.

Voids in SiO2 films deposited on GaN were probed by using monoenergetic positron beams. The films were fabricated on GaN substrates by using plasma-enhanced chemical vapor deposition. The size and density of the voids in the films increased up to an annealing temperature of 800 °C and then decreased at 1000 °C. The observed annealing behaviors of the voids were attributed to the desorption of impurities incorporated during the deposition process and the shrinkage of the Si–O matrix by high-temperature annealing. Vacancy-type defects were introduced into the GaN substrate after 1000 °C annealing in O2 atmosphere due to the diffusion of Ga from the substrate to the SiO2 film. No out-diffusion of Ga into the SiO2 film was observed for the annealing in N2 atmosphere. Thus, the observed out-diffusion of Ga was attributed to the enhanced oxidation of GaN during the annealing in O2 atmosphere. The diffusion of positrons implanted into the GaN substrate toward the SiO2 film was suppressed by annealing, suggesting a decrease in the negative charges in the SiO2 film or near the SiO2/GaN interface.

The high temperature behavior of a Au(d = 180 nm)/Cu(d = 480 nm) two-layer system was studied by Positron Annihilation Spectroscopy (PAS). Therefor defect sensitive and element specific Coincident Doppler Broadening Spectroscopy (CDBS) with a monoenergetic positron beam was applied. In situ CDBS during isothermal tempering at 633 K for 7 h enabled the observation of both annealing of the Au film and alloying of Au and Cu. The changes in the recorded spectra could be separated into two stages: In the first stage, annealing in the Au film was detected, whereas in the second stage intermixing of Au and Cu atoms was observed. The intermixing zone was found to be homogeneous up to a depth of more than 180 nm. In addition, ab initio calculations were performed in order to determine the composition of the alloyed film, which was found to be Au0.7Cu0.3.

Recent studies showed that positron annihilation methods can provide key insights into the nanostructure and electronic structure of thin film solar cells. In this study, positron annihilation lifetime spectroscopy (PALS) is applied to investigate CdSe quantum dot (QD) light absorbing layers, providing evidence of positron trapping at the surfaces of the QDs. This enables one to monitor their surface composition and electronic structure. Further, 2D-Angular Correlation of Annihilation Radiation (2D-ACAR) is used to investigate the nanostructure of divacancies in photovoltaic-high-quality a-Si:H films. The collected momentum distributions were converted by Fourier transformation to the direct space representation of the electronpositron autocorrelation function. The evolution of the size of the divacancies as a function of hydrogen dilution during deposition of a-Si:H thin films was examined. Finally, we present a first positron Doppler Broadening of Annihilation Radiation (DBAR) study of the emerging class of highly efficient thin film solar cells based on perovskites.

Pressurized water reactor (PWR) Zr-based alloy structural materials show creep and growth under neutron irradiation as a consequence of the irradiation induced microstructural changes in the alloy. A better scientific understanding of these microstructural processes can improve simulation programs for structural component deformation and simplify the development of advanced deformation resistant alloys. As in-pile irradiation leads to high material activation and requires long irradiation times, the objective of this work was to study whether ion irradiation is an applicable method to simulate typical PWR neutron damage in Zr-based alloys, with AREVA’s M5® alloy as reference material. The irradiated specimens were studied by electron backscatter diffraction (EBSD), positron Doppler broadening spectroscopy (DBS) and in situ transmission electron microscopy (TEM) at different dose levels and temperatures. The irradiation induced microstructure consisted of - and -type dislocation loops with their characteristics corresponding to typical neutron damage in Zr-based alloys; it can thus be concluded that heavy ion irradiation under the chosen conditions is an excellent method to simulate PWR neutron damage.

Positron depth-profiling was applied to monitor the effects of hydrogenation on Mg1−yTiy thin films. S–W diagrams and VEPFIT analysis of the depth-profiles demonstrated the homogeneity of most metal and metal hydride films. In contrast, Mg0.90Ti0.10Hx films consisted of a double layer, with a thin unloaded Mg0.90Ti0.10 or Mg–Ti–Pd alloy layer on top of a hydrogenated bottom layer. The metal-to-metal-hydride transformation of Mg domains in the nanoscale phase-segregated Mg–Ti films was monitored exclusively, enabled by the large difference in positron affinity for Mg and Ti. The changes in the Doppler broadening parameters revealed that the metal–insulator transition for fluorite MgH2 is similar to that for rutile MgH2. Positron lifetime spectroscopy showed the presence of di-vacancies in the metal sub-lattice of as-deposited and hydrogenated Mg–Ti metal films, which may induce the fast hydrogen sorption kinetics of the fluorite MgH2 phase.

FeCo alloys are industrially important engineering materials which play an outstanding role in applications requiring soft magnetic materials. The challenge is to include ternary elements to improve the mechanical properties. Here noble elements as Pt or Pd were used for these experiments. With neutron diffraction and positron annihilation technique Fe 67 Co 30 Pt 3 and Fe 67 Co 30 Pd 3 (at. pct.) samples were measured to study the influence of different cooling rates on ordering and disordering. The ordering and disordering process is responsible for the mechanical properties in dependence of temperature. The correlation of ordering and defect density is described.

Positron Annihilation Spectroscopy (PAS) performed with continuous and pulsed positron beams allows to characterize the size of the intrinsic nano-voids in silica glass, their in depth modification after ion implantation and their decoration by implanted ions. Three complementary PAS techniques, lifetime spectroscopy (LS), Doppler broadening spectroscopy (DBS) and coincidence Doppler broadening spectroscopy (CDBS) will be illustrated by presenting, as a case study, measurements obtained on virgin and gold implanted silica glass.

Defects in the Al2O3(25 nm)/GaN structure were probed by using monoenergetic positron beams. Al2O3 films were deposited on GaN by atomic layer deposition at 300 °C. Temperature treatment above 800 °C leads to the introduction of vacancy-type defects in GaN due to outdiffusion of atoms from GaN into Al2O3. The width of the damaged region was determined to be 40–50 nm from the Al2O3/GaN interface, and some of the vacancies were identified to act as electron trapping centers. In the Al2O3 film before and after annealing treatment at 300–900 °C, open spaces with three different sizes were found to coexist. The density of medium-sized open spaces started to decrease above 800 °C, which was associated with the interaction between GaN and Al2O3. Effects of the electron trapping/detrapping processes of interface states on the flat band voltage and the defects in GaN were also discussed.

Outstanding crystalline perfection is a key requirement for the formation of new forms of electronic order in a vast number of widely different materials. Whereas excellent sample quality represents a standard claim in the literature, there are, quite generally, no reliable microscopic probes to establish the nature and concentration of lattice defects such as voids, dislocations and different species of point defects on the level relevant to the length and energy scales inherent to these new forms of order. Here we report an experimental study of the archetypical skyrmion-lattice compound MnSi, where we relate the characteristic types of point defects and their concentration to the magnetic properties by combining different types of positron spectroscopy with ab-initio calculations and bulk measurements. We find that Mn antisite disorder broadens the magnetic phase transitions and lowers their critical temperatures, whereas the skyrmion lattice phase forms for all samples studied underlining the robustness of this topologically non-trivial state. Taken together, this demonstrates the unprecedented sensitivity of positron spectroscopy in studies of new forms of electronic order., 8 pages, 4 figures

Within the last decade powerful methods have been developed to study surfaces using bright low-energy positron beams. These novel analysis tools exploit the unique properties of positron interaction with surfaces, which comprise the absence of exchange interaction, repulsive crystal potential and positron trapping in delocalized surface states at low energies. By applying reflection high-energy positron diffraction (RHEPD) one can benefit from the phenomenon of total reflection below a critical angle that is not present in electron surface diffraction. Therefore, RHEPD allows the determination of the atom positions of (reconstructed) surfaces with outstanding accuracy. The main advantages of positron annihilation induced Auger-electron spectroscopy (PAES) are the missing secondary electron background in the energy region of Auger-transitions and its topmost layer sensitivity for elemental analysis. In order to enable the investigation of the electron polarization at surfaces low-energy spin-polarized positrons are used to probe the outermost electrons of the surface. Furthermore, in fundamental research the preparation of well defined surfaces tailored for the production of bound leptonic systems plays an outstanding role. In this report, it is envisaged to cover both, the fundamental aspects of positron surface interaction and the present status of surface studies using modern positron beam techniques., Comment: Review artivle: 102 pages, 51 figures

The surfaces of polycrystalline Cu, Au-coated Cu, Si(1 0 0) and of Si(1 0 0) coated with 1.5 monolayer Cu were investigated with positron annihilation induced Auger-electron spectroscopy (PAES). Since the electron background has been reduced considerably we observed the Cu M 2,3 VV-Auger transition on a copper surface within only three hours which is the shortest acquisition time reported so far for PAES. In order to demonstrate PAES’ high potential the Auger-yield, the signal-to-background ratio as well as the surface selectivity were compared with accompanying EAES-measurements quantitatively. A more efficient electron energy analyzer for the present PAES setup would lead to an additional efficiency gain of more than two orders of magnitude. The presented measurements were performed at the low-energy positron beam of high intensity NEPOMUC at the research reactor FRM II.