1. Diffusion of TiN into aluminum films measured by soft x-ray spectroscopy and Rutherford backscattering spectroscopy
- Author
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Thomas A. Callcott, Alexander Moewes, T. M. Schuler, Nancy Ruzycki, William A. Hollerman, M. Kuhn, Gary A. Glass, and D. L. Ederer
- Subjects
X-ray spectroscopy ,Materials science ,Extended X-ray absorption fine structure ,Analytical chemistry ,chemistry.chemical_element ,Surfaces and Interfaces ,Condensed Matter Physics ,XANES ,Surfaces, Coatings and Films ,chemistry ,Thin film ,Soft X-ray emission spectroscopy ,Tin ,Absorption (electromagnetic radiation) ,Spectroscopy - Abstract
Understanding the atomic bonding properties at the interface between thin films is crucial to a number of key modern technical devices, including semiconductor integrated circuits, magnetic recording media, batteries, and even solar cells. Semiconducting materials such as titanium nitride (TiNx) are widely used in the manufacturing of modern electronic devices, requiring a wealth of information about its electronic structure. We present data from soft x-ray emission, soft x-ray absorption, and Rutherford backscattering spectroscopy experiments involving a sample consisting of a 40 nm TiN layer on top of an aluminum film 600 nm thick. Soft x-ray emission spectroscopy and near-edge x-ray absorption fine structure (NEXAFS) spectroscopy are tools that provide a nondestructive, atomic site-specific probe of the interface, where the electronic structure of the material can be mapped out element by element. Rutherford backscattering spectroscopy (RBS) measurements supply data on the elemental composition and dep...
- Published
- 2001
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