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Spin degree of freedom generally plays an important role in unconventional superconductivity. In many of the iron-based compounds, superconductivity is found in close proximity to long-range antiferromagnetic order, whereas monolayer FeSe grown on SrTiO3, with enhanced superconductivity, exhibits no magnetic or nematic ordering. Here we grow monolayer and multilayer FeSe on antiferromagnetic EuTiO3(001) layers, in an effort to introduce a spin polarization in proximity to the superconductivity of FeSe. By X-ray magnetic dichroism, we observe an antiferromagnet–ferromagnet switching on Eu and Ti sites in EuTiO3 driven by the applied magnetic field, with no concomitant spin polarization on the Fe site of FeSe. Transport measurements show enhanced superconductivity of monolayer FeSe on EuTiO3 with a transition temperature of ~30 K. The band structure revealed by photoemission spectroscopy is analogous to that of FeSe/SrTiO3. Our work creates a platform for the interplay of spin and unconventional superconductivity in the two-dimensional limit.

We performed an optical spectroscopy study of electronic and magnetic excitations for a rare-earth system with a single electron quasi-localized in the f-shell on an ion at high-symmetry crystallographic site in application to CeB$_{6}$ heavy-fermion metal. We carried out group-theoretical classification of the electronic crystal field (CF) transitions and assessed their coupling to light cross-sections for polarization resolved Raman scattering processes. We discuss applicability of symmetrized Raman susceptibility to studies of exotic charge and spin high multiplet ordering phases in f-electron systems. We study temperature effects on intra- and inter-multiplet CF transitions and also on the coupling between the CF excitations with the lattice vibrations. We acquired temperature dependence of the low-frequency polarization resolved Raman response and obtained the static Raman susceptibility for all Raman-allowed symmetry channels: A$_{1g}$, E$_{g}$, T$_{1g}$, and T$_{2g}$ of the cubic O$_{h}$ point group. We demonstrate that for CeB$_{6}$ system only T$_{1g}$-symmetry static Raman susceptibility shows an anomalous temperature dependence which is consistent with the magnetic susceptibility data measured by other techniques. This anomalous behavior in the T$_{1g}$-channel signifies the presence of long wavelength magnetic fluctuations, while the lack of susceptibility enhancement for all the remaining symmetry channels indicates that long wavelength charge quadrupole fluctuations at low-temperature are weak.

Topological magnets comprising 2D magnetic layers with Curie temperatures (TC ) exceeding room temperature are key for dissipationless quantum transport devices. However, the identification of a material with 2D ferromagnetic planes that exhibits an out-of-plane-magnetization remains a challenge. This study reports a ferromagnetic, topological, nodal-line, and semimetal MnAlGe composed of square-net Mn layers that are separated by nonmagnetic Al-Ge spacers. The 2D ferromagnetic Mn layers exhibit an out-of-plane magnetization below TC ≈ 503 K. Density functional calculations demonstrate that 2D arrays of Mn atoms control the electrical, magnetic, and therefore topological properties in MnAlGe. The unique 2D distribution of the Berry curvature resembles the 2D Fermi surface of the bands that form the topological nodal line near the Fermi energy. A large anomalous Hall conductivity of ≈700 S cm-1 is obtained at 2 K and related to this nodal-line-induced 2D Berry curvature distribution. The high transition temperature, large anisotropic out-of-plane magnetism, and natural heterostructure-type atomic arrangements consisting of magnetic Mn and nonmagnetic Al/Ge elements render nodal-line MnAlGe one of the few, unique, and layered topological ferromagnets that have ever been observed.

The transition metal dichalcogenide TiSe$_2$ has received significant research attention over the past four decades. Different studies have presented ways to suppress the 200~K charge density wave transition, vary low temperature resistivity by several orders of magnitude, and stabilize magnetism or superconductivity. Here we give the results of a new synthesis technique whereby samples were grown in a high pressure environment with up to 180~bar of argon gas. Above 100~K, properties are nearly unchanged from previous reports, but a hysteretic resistance region that begins around 80~K, accompanied by insulating low temperature behavior, is distinct from anything previously observed. An accompanying decrease in carrier concentration is seen in Hall effect measurements, and photoemission data show a removal of an electron pocket from the Fermi surface in an insulating sample. We conclude that high inert gas pressure synthesis accesses an underlying nonmetallic ground state in a material long speculated to be an excitonic insulator., Comment: 11 pages, 7 figures

In a superconducting nanostructure, phase fluctuations are prominent and give rise to finite resistance below superconducting transition temperature ${T}_{c}$. By using a monolayer polymer/nanosphere hybrid we developed previously, we fabricated a large array of interconnected niobium (Nb) honeycomb lattices with the thinnest interconnected linewidth $d$ ranging from 36 nm to 89 nm. The honeycomb cells form a highly ordered triangular lattice with more than ${10}^{8}$ unit cells extending over few ${\mathrm{mm}}^{2}$ area, which enables the detailed transport study at nanometer scales. We found ${T}_{c}$ gradually drops with decreasing $d$ due to the phase-slip effect, while the critical field at lower temperature tends to follow that of a continuous Nb thin film. One likely scenario is to consider a model system of numerous superconducting islands interconnected by short phase-slip junctions, where the phase coherence is dictated by the phase slippage in the nanoconstriction. This was strongly supported by the excellent fitting to the thermally activated phase-slip model and also the unusual phenomena of transition width narrowing in high fields.

In this study, we use angle resolved photoemission spectroscopy, Raman spectroscopy, low energy electron diffraction, and x-ray scattering to reveal an unusual electronically mediated charge density wave (CDW) in K0.9Mo6O17. Not only does K0.9Mo6O17 lack signatures of electron-phonon coupling, but it also hosts an extraordinary surface CDW, with TS_CDW = 220 K nearly twice that of the bulk CDW, TB_CDW = 115 K. While the bulk CDW has a BCS-like gap of 12 meV, the surface gap is 10 times larger and well in the strong coupling regime. Strong coupling behavior combined with the absence of signatures of strong electron-phonon coupling indicates that the CDW is likely mediated by electronic interactions enhanced by low dimensionality.

We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defects generated. Major defect types of the BiSe antisite and partial Bi2-layer intercalation are identified through combined studies of direct atomic-scale imaging with scanning transmission electron microscopy in conjunction with energy-dispersive x-ray spectroscopy, x-ray diffraction, and Hall effect measurements. We propose a consistent explanation to the origin of defect type, growth morphology, and transport property.

Hole-doped single crystals of misfit-layered cobaltate Bi2−xPbxSr2−zCo2Oy (x = 0–0.61, y = 8.28–8.62, and z = 0.01–0.22) have been successfully grown using the optical floating-zone method. Heavier hole doping has been achieved through both Pb substitution in the Bi site and the more effective Sr vacancy formation. The Co4+ : Co3+ ratio can be raised significantly from its original ∼1 : 1 to 4.5 : 1, as confirmed by iodometric titration. A spin-glass transition temperature of Tg ∼ 70 K is confirmed by ac susceptibility measurement when the Co4+ : Co3+ ratio becomes higher than 2 : 1, presumably owing to the significantly increased probability of triangular geometrical frustration among antiferromagnetically coupled localized Co4+ spins.

We have developed an approach to prepare large array nanostructured thin films using polyethylene oxide assisted self-assembly of polystyrene nanospheres as a template. By tuning the antidot diameter in the cobalt thin films, we found a crossover behavior in the magnetization reversal process. In addition, the effective moment per cobalt atom turns out to drop with growing antidot diameter which effectively increases the surface to bulk volume fraction. Our results suggest a tendency of reduced saturation magnetization in a ferromagnet/normal metal interface, where the mixing of itinerant electrons with ferromagnetic d electrons can give rise to observable effect.