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A modified large-size MOCVD reactor is developed to produce uniform and large-volume epitaxy thin film layer of gallium nitride (GaN). The full governing equations for continuity, momentum, energy and chemical species are solved numerically. It is investigated how thermal flow field, and the operating parameters affect molar concentration of each reactant, and the thin film uniformity. These parameters are involved such as the chamber pressure (100-700 torr), susceptor rotation rate (100-800). In this paper, the simulation results from these listed parameters shows that an optimum epitaxy layer can be achieved in the large-size reactor.

The effects of operating conditions in a self-assembly of a horizontal reactor for metalorganic chemical vapor deposition are investigated and described by simulation and analysis. The parameters are involved such as space between the top wall and the susceptor (30-60 mm), the reactor top wall temperature (41-161 ºC), the chamber pressure (100-760 torr), and the susceptor rotation rate (0-150 rpm). The simulation results from these listed parameters show that an optimization for an ideal stagnation flow can be achieved in a horizontal reactor