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Crystallographic defects such as vacancies and stacking faults engineer electronic band structure at the atomic level and create zero- and two-dimensional quantum structures in crystals. The combination of these point and planar defects can generate a new type of defect complex system. Here, we investigate silicon carbide nanowires that host point defects near stacking faults. These point-planar defect complexes in the nanowire exhibit outstanding optical properties of high-brightness single photons (360 kcounts/s), a fast recombination time (1 ns), and a high Debye-Waller factor (50%). These distinct optical properties of coupled point-planar defects lead to an unusually strong zero-phonon transition, essential for achieving highly efficient quantum interactions between multiple qubits. Our findings can be extended to other defects in various materials and therefore offer a new perspective for engineering defect qubits.

By integrating WSe 2 monolayers with a nanopatterned Si micro-cantilever, we create the quantum emitters at deterministic sites and control their frequency with voltages. Also, reduction of the fine-structure splitting is observed by engineering the strain.

Chemical vapor deposition (CVD) using liquid-phase precursors has emerged as a viable technique for synthesizing uniform large-area transition metal dichalcogenide (TMD) thin films. However, the liquid-phase precursor-assisted growth process typically suffers from small-sized grains and unreacted transition metal precursor remainders, resulting in lower-quality TMDs. Moreover, synthesizing large-area TMD films with a monolayer thickness is also quite challenging. Herein, we successfully synthesized high-quality large-area monolayer molybdenum diselenide (MoSe2) with good uniformity via promoter-assisted liquid-phase CVD process using the transition metal-containing precursor homogeneously modified with an alkali metal halide. The formation of a reactive transition metal oxyhalide and reduction of the energy barrier of chalcogenization by the alkali metal promoted the growth rate of the TMDs along the in-plane direction, enabling the full coverage of the monolayer MoSe2 film with negligible few-layer regions. Note that the fully selenized monolayer MoSe2 with high crystallinity exhibited superior electrical transport characteristics compared with those reported in previous works using liquid-phase precursors. We further synthesized various other monolayer TMD films, including molybdenum disulfide, tungsten disulfide, and tungsten diselenide, to demonstrate the broad applicability of the proposed approach.

Point defects in crystals provide important building blocks for quantum applications. To initialize, control, and read-out their quantum states, an efficient optical interface for addressing defects with photons is required. However, conventional confocal fluorescence microscopy with high refractive index crystals has limited photon collection efficiency and spatial resolution. Here, we demonstrate high resolution, high contrast imaging for defects qubits using microsphere-assisted confocal microscopy. A microsphere provides an excellent optical interface for point defects with a magnified virtual image that improves spatial resolution up to ~${\lambda}$/5 as well as an optical signal-to-noise ratio by four times. These features enable individual optical addressing of single photons and single spins of spatially-unresolved defects in conventional confocal microscopy with improved signal contrast. The combined optical tweezers show the possibility of positioning or scanning the microspheres for deterministic coupling and wide-field imaging of defects. The approach does not require any complicated fabrication and additional optical system but uses simple micro-optics off-the-shelf. From these distinctive advantages of the microspheres, our approach can provide an efficient way for imaging and addressing closely-spaced defects with higher resolution and sensitivity., Comment: 20 pages, 5 figures

Coherent excitation of quantum emitters in hexagonal boron nitride is inhibited by electron decay into intermediate dark states or spectral diffusion. We present an optical co-excitation scheme to reduce these transitions and amplify the photoluminescence.

Since III-nitride semiconductor-based ultraviolet (UV) light-emitting diodes (LEDs) are compact and efficient, they can be suggested as a substitute for conventional arc-lamps. However, reported UV LEDs focused on a narrow range of UV spectrum contrary to conventional arc-lamps. Here, we introduce GaN quantum dots (QDs) grown on different facets of hexagonal truncated pyramid structures on a conventional sapphire substrate. These structures include semipolar facets as well as a polar facet, which obtain intrinsically different piezoelectric fields and growth rates of QDs. Consequently, we demonstrated a plateau-like broadband UV emitter ranging from UV-C to UV-A from the GaN QDs.

Group III-nitride semiconductor-based ultraviolet (UV) light emitting diodes have been suggested as a substitute for conventional arc-lamps such as mercury, xenon and deuterium arc-lamps, since they are compact, efficient and have a long lifetime. However, in previously reported studies, group III-nitride UV light emitting diodes did not show a broad UV spectrum range as conventional arc-lamps, which restricts their application in fields such as medical therapy and UV spectrophotometry. Here, we propose GaN quantum dots (QDs) grown on different facets of hexagonal truncated pyramid structures formed on a conventional (0001) sapphire substrate. A hexagonal truncated GaN pyramid structure includes {101̄1} semipolar facets as well as a (0001) polar facet, which have intrinsically different piezoelectric fields and growth rates of GaN QDs. Consequently, we successfully demonstrated a plateau-like broadband UV spectrum ranging from ∼400 nm (UV-A) to ∼270 nm (UV-C) from the GaN QDs. In addition, at the top-edge of the truncated pyramid structure, a strain was locally suppressed compared to the center of the truncated pyramid structure. As a result, various emission wavelengths in the UV range were achieved from the GaN QDs grown on the sidewall, top-edge and top-center of hexagonal truncated pyramid structures, which ultimately provide a broadband UV spectrum with high efficiency.

We demonstrate position and frequency control of quantum emitters from integrated WSe2 monolayers on a strain tunable Si actuator. The engineered quantum light sources will provide important hardware for the future scalable and integrated quantum photonic system.

Plasmonic nano-structures provides an efficient way to control and enhance the radiative properties of quantum emitters. Coupling these structures to single defects in low-dimensional materials provides a particularly promising material platform to study emitter-plasmon interactions because these emitters are not embedded in a surrounding dielectric. They can therefore approach a near-field plasmonic mode to nanoscale distances, potentially enabling strong light-matter interactions. However, this coupling requires precise alignment of the emitters to the plasmonic mode of the structures, which is particularly difficult to achieve in a site-controlled structure. We present a technique to generate quantum emitters in 2D tungsten diselenide (WSe2) coupled to site-controlled plasmonic nano-pillars. The plasmonic nano-pillars induce strain in the two dimensional material which generates quantum emitters near the high-field region of the plasmonic mode. The electric field of the nano-pillar mode lies close to parallel with the two-dimensional material, and is therefore in the correct orientation to couple to quantum emitters. Interactions between the emitter and plasmonic mode result in an enhanced spontaneous emission and increased brightness. This approach may enable bright site-controlled non-classical light sources for applications in quantum communication and optical quantum computing.

Although the study of single quantum dot (QD) properties without the background noise and dephasing processes caused by surrounding carriers is a crucial issue, the spatial-selective excitation of a single QD is still challenging, due to the diffraction nature of light. Here, we demonstrate a deep subwavelength excitation of a single QD using two-photon plasmonic nanofocusing. Self-aligned plasmonic nanofocusing on a single QD was achieved using metal coated nanopyramid structures. The highly enhanced local electric field generated by the plasmonic nanofocusing gives rise to a large increase in the optical nonlinear effect (i.e., two-photon excitation). As a result of the enhanced field enhancement on the metal-pyramid hybrid structure, the two-photon luminescence intensity was enhanced by a factor of 5000, and the selective excitation of a single QD enabled us to observe InGaN QD emission at near room temperature, due to the large suppression of the background emission. Our approach opens promising persp...

Experimental work using IR thermometry was undertaken to obtain phase distributions on the heated surface during subcooled pool boiling of FC-72 at atmospheric pressure. The time-averaged wetted area fraction (WF), the contact line length density (CLD), the frequency between dry-out events, the lifetime of the dry patches, and the dry patch size distributions on the surface were characterized through the observed data. The results confirmed that subcooling of the bulk liquid results in smaller bubbles and increased WF for a given superheat and thus higher critical heat flux (CHF). The subcooled boiling curve could be computed according to the heat flux through the liquid area weighted on WF, and CHF occurred when the WF decreased faster than the increase in heat transfer through the liquid area. CHF mechanisms that have been proposed in the literature were evaluated against the observations.

A single photon source is an essential element for the photonic quantum information applications including the quantum communication, the quantum simulation, and the quantum computation [1,2]. Semiconductor quantum dots (QDs) have been widely considered as a promising platform for the single photon source due to their various advantages of manipulation and integration with various photonic elements. To realize the on-chip quantum devices, there have been numerous effort to integrate III-V QDs with silicon-based photonic circuits [3,4]. However the self-assembled QDs have inherent drawbacks of irregular size distribution and random position. To overcome these drawbacks, various methods have been studied to obtain the site-controlled QDs such as the pyramid, the inverted pyramid, the nanohole, and the spatially selective H incorporation techniques [5]. In this study, we obtained site-controlled InAs QDs by the selective-area growth (SAG) method and integrated single photon source with the silicon-based photonic circuits through the micro-transfer technique.

The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulate single photons at low power and high speed. However, lithium niobate lacks efficient single-photon emitters, which are essential for scalable quantum photonic circuits. We demonstrate deterministic coupling of single-photon emitters with a lithium niobate photonic chip. The emitters are composed of InAs quantum dots embedded in an InP nanobeam, which we transfer to a lithium niobate waveguide with nanoscale accuracy using a pick-and-place approach. An adiabatic taper transfers single photons emitted into the nanobeam to the lithium niobate waveguide with high efficiency. We verify the single photon nature of the emission using photon correlation measurements performed with an on-chip beamsplitter. Our results demonstrate an important step toward fast, reconfigurable quantum photonic circuits for quantum information processing.

We demonstrate on chip filtering of single photons using a hybrid integrated device that contains III/V quantum dots and a silicon-on-insulator photonic disk resonator.

We fabricated InGaN double-hetero structure (DHS) on the nanosized pyramid structure and successfully demonstrated efficient red color emission at 650 nm from this unique structure. The nanosized pyramid structure was fabricated by selective area growth method with nanoimprint. The different diffusion length of composite atoms and compositional pulling effect on the pyramid structure gave rise to not only compositional variation, but also high In-content InGaN of more than 40%. The InGaN DHS on nanopyramids shows high internal quantum efficiency, sub-ns fast recombination time (negligible built-in electric fields), and less efficiency droop even with the high In content. These results are important to realize efficient red emission based on InGaN material, providing possibilities for efficient photonic devices operating at the long wavelength visible region.

We demonstrate a new class of near infrared localized defects in few layer phosphorene. This work highlights the significance of defect states of phosphorene for near infrared optoelectronic applications.

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of pre-characterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons., Comment: 19 Pages in total, including 8 figures

White light emitting InGaN nanostructures hold a key position in future solid-state lighting applications. Although many suggested approaches to form group III-nitride vertical structures have been reported, more practical and cost effective methods are still needed. Here, we present a new approach to GaN/InGaN core-shell nanostructures at a wafer level formed by chemical vapor-phase etching and metal-organic chemical vapor deposition. Without a patterning process, we successfully obtained high quality and polarization field minimized In-rich GaN/InGaN core-shell nanostructures. The various quantum well thicknesses and the multi-facets of the obelisk-shaped core-shell nanostructures provide a broad spectrum of the entire visible range without changing the InGaN growth temperature. Due to their high crystal quality and polarization field reduction, the core-shell InGaN quantum wells show an ultrafast radiative recombination time of less than 200 ps and uniformly high internal quantum efficiency in the broad spectral range. We also investigated the important role of polarization fields in the complex recombination dynamics in InGaN quantum wells.

Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. Low-density InAs quantum dots on InP surfaces are grown in a molecular beam epitaxy system using a modified Stranski–Krastanov growth paradigm. This material is a source of bright and indistinguishable single photons in the 1.3 μm telecom band. Here, the exploration of the growth parameters is presented as a phase diagram, while low-temperature photoluminescence and atomic resolution images are presented to correlate structure and spectral performance. This work identifies specific stacking faults and V-shaped defects that are likely causes of the observed low brightness emission at 1.55 μm telecom wavelengths. The different locations of the imaged defects suggest possible guidance for future development of InAs/InP single photon sources for c-band, 1.55 μm wavelength telecommunication systems.Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. Low-density InAs quantum dots on InP surfaces are grown in a molecular beam epitaxy system using a modified Stranski–Krastanov growth paradigm. This material is a source of bright and indistinguishable single photons in the 1.3 μm telecom band. Here, the exploration of the growth parameters is presented as a phase diagram, while low-temperature photoluminescence and atomic resolution images are presented to correlate structure and spectral performance. This work identifies specific stacking faults and V-shaped defects that are likely causes of the observed low brightness emission at 1.55 μm telecom wavelengths. The different locations of the imaged defects suggest possible guidance for future development of InAs/InP single photon sources for c-band, 1.55 μm wavelength telecommunication systems.

Pristine graphene quantum dots and graphene oxide quantum dots are synthesized by chemical exfoliation from the graphite nanoparticles with high uniformity in terms of shape (circle), size (less than 4 nm), and thickness (monolayer). The origin of the blue and green photoluminescence of GQDs and GOQDs is attributed to intrinsic and extrinsic energy states, respectively.

Charge transfer complex (CTC) has been formed between photoluminescent graphene oxide (GO) as electron acceptor and N-methylpyrrolidone (NMP) as electron donor. Studies of UV absorption and photoluminescence (PL) suggest that the formation of CTC results in a red-shift of absorption and a new PL emission. Decay dynamics was described by time-resolved PL spectra and a clear ultrafast charge-transfer process was observed from the PL rise times. The PL of the CTC was sensitive to external components, allowing molecular detection of 7,7,8,8-tetracyanoquinodimethane and 1,3,5-trinitrobenzene up to hundred nanomolar concentration levels through the photoluminescence signals.

Picosecond time-resolved spectroscopy studies are performed on surface plasmon (SP) mediated conjugated polymers. Huang-Rhys factor and photoluminescence (PL) decay time at low temperature were unchanged with the respect to thickness of Ag nanostructures due to a decrease in the surface plasmon coupling rates (Okamoto , Appl. Phys. Lett., vol. 87, 07112, 2005). However, Huang-Rhys factor and PL decay time at room temperature were increased with respect to the thickness of the Ag nanostructures. Relatively strong emission from the interchain excitons of surface plasmon (SP) mediated conjugated polymers in the film-like Ag nanostructure was verified by PL decay dynamics from time-resolved photoluminescence (TR-PL) measurement.

A dislocation-eliminating chemical control method for high-quality GaN nanostructures together with various types of InGaN quantum well structures are demonstrated using a chemical vapor-phase etching technique. Unlike chemical wet etching, chemical vapor-phase etching could efficiently control the GaN and form various shapes of dislocation-free and strain-relaxed GaN nanostructures. The chemically controlled GaN nanostructures showed improved crystal quality due to the selective etching of defects and revealed various facets with reduced residual strain via the facet-selective etching mechanism. These structural properties derived excellent optical performance of the GaN nanostructures. The chemical vapor-phase etching method also showed possibilities of the fascinating applications for high-efficiency InGaN quantum well structures, such as InGaN quantum well layer on void embedded GaN layer, InGaN quantum well embedded GaN nanostructure, and InGaN/GaN core/shell nanostructure.

Electrically driven quantum dot, wire, and well hybrid light-emitting diodes are demonstrated by using nanometer-sized pyramid structures of GaN. InGaN quantum dots, wires, and wells are formed at the tops, edges, and sidewalls of pyramids, respectively. The hybrid light-emitting diodes containing low-dimensional quantum structures are good candidates for broad-band highly efficient visible lighting sources.

This work deals with the luminescence properties of Al0.5Ga0.5N/GaN quantum dots grown by molecular beam epitaxy on c-plane sapphire. The low temperature PL bands are shifted below the GaN gap by the Stark effect. An approximate model, based on dot heights distributions estimated by transmission electron microscopy, allows to account for the luminescence lineshape and for the screening of the Stark effect by injected carriers. The effect of capping the dots with varying (Al,Ga)N thicknesses was also studied, showing that uncapped dots are sensitive to their atmospheres. The electroluminescence spectra of diodes having such dots as active region are discussed. Finally, ways of getting emission deeper in the UV are presented.

The quantum plasmonics field has emerged and been growing increasingly, including study of single emitter-light coupling using plasmonic system and scalable quantum plasmonic circuit. This offers opportunity for the quantum control of light with compact device footprint. However, coupling of a single emitter to highly localized plasmonic mode with nanoscale precision remains an important challenge. Today, the spatial overlap between metallic structure and single emitter mostly relies either on chance or on advanced nanopositioning control. Here, we demonstrate deterministic coupling between three-dimensionally nanofocused plasmonic modes and single quantum dots (QDs) without any positioning for single QDs. By depositing a thin silver layer on a site-controlled pyramid QD wafer, three-dimensional plasmonic nanofocusing on each QD at the pyramid apex is geometrically achieved through the silver-coated pyramid facets. Enhancement of the QD spontaneous emission rate as high as 22 ± 16 is measured for all processed QDs emitting over ∼150-meV spectral range. This approach could apply to high fabrication yield on-chip devices for wide application fields, e.g., high-efficiency light-emitting devices and quantum information processing.

To improve poor emissions from quantum wires and dots in GaN pyramidal structure, we introduced silver film on pyramid structure. Due to the pyramidal geometry, we could successfully control the spontaneous emission of these structures.

We present group III-nitride semiconductor nanostructures grown on various types of GaN-based pyramid, annular, columnar, and tapered structures, together with their applications in broadband light emitting devices, unidirectional photonic diodes, and single photon sources.

A key issue in a single photon source is fast and efficient generation of a single photon flux with high light extraction efficiency. Significant progress toward high-efficiency single photon sources has been demonstrated by semiconductor quantum dots, especially using narrow bandgap materials. Meanwhile, there are many obstacles, which restrict the use of wide bandgap semiconductor quantum dots as practical single photon sources in ultraviolet-visible region, despite offering free space communication and miniaturized quantum information circuits. Here we demonstrate a single InGaN quantum dot embedded in an obelisk-shaped GaN nanostructure. The nano-obelisk plays an important role in eliminating dislocations, increasing light extraction, and minimizing a built-in electric field. Based on the nano-obelisks, we observed nonconventional narrow quantum dot emission and positive biexciton binding energy, which are signatures of negligible built-in field in single InGaN quantum dots. This results in efficient and ultrafast single photon generation in the violet color region.

To investigate the effect of a seed layer on the growth and properties of ZnO nanorods using hydrothermal technique, various thickness of sputter deposited ZnO thin films were used. The changes in crystallinity, orientation, and optical properties of the nanorods synthesized on these ZnO thin films were examined. These properties were studied simultaneously in two series of samples, wherein in one series the nanorods were unannealed while in the other series they were annealed. Structural characterization revealed that both categories of nanorods were highly crystalline, with a hexagonal phase, and grew along the [0001] direction. The density of the nanorods per unit area increased as the thickness of the seed layer decreased. We also found that the defect related emission in photoluminescence spectra was quite low in both the annealed and non-annealed samples series. Typically, the decay curves obtained from these ZnO nanorods show a combination of two exponential decays. The nonradiative fast decay component was affected by the thickness of the seed layer and its values were higher than those of previously reported ZnO nanostructures grown by the hydrothermal technique. This comprehensive study shows that as grown nanorods lead directly to a high crystalline quality.

We report on the influence of a capping layer on the photoluminescence properties of self-assembled GaN quantum dots grown on an Al(0.5)Ga(0.5)N template. Self-assembled GaN quantum dots show a large quantum confined Stark shift and long carrier recombination time due to strong built-in spontaneous and piezoelectric polarization fields. Nevertheless, owing to strong carrier localization and suppressed nonradiative processes, these quantum dots have a high-quantum efficiency even at room temperature. Here, we show that the capping thickness has an important role on the optical properties of the GaN quantum dots. The radiative and nonradiative recombination processes of quantum dots are strongly affected by adjusting the capping thickness, and the GaN quantum dots with 12 monolayers-thick Al(0.5)Ga(0.5)N capping layer show a remarkably high internal quantum efficiency of more than 80% at room temperature. We also studied photoluminescence quenching and enhancement for surface (uncapped) quantum dots caused by photoadsorption and photodesorption of oxygen.

We have investigated the optical properties of multi-stacked GaN/AlGaN self-assembled quantum dots (QDs) grown by molecular beam epitaxy. The QDs that emit visible light have a broad spectral range without incorporation of indium alloy because of the quantum-confined Stark effect. We found differences in the structural and optical properties between the layers of multi-stacked QDs. The carriers are more effectively transferred from the AlGaN barrier to the low energy side of the GaN QD emission than to the high energy side. We also observed long-lived carrier recombination dynamics for the visible range emission from QDs.