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We have surveyed 22,155 analyses issues to know the portion of surface analysis at the total analyses activities. According to the survey result, the contribution of SIMS in the total analyses issues was about 7%. The portions of semiconductor process control, composition and contamination in the SIMS analyses issues are 25%, 29% and 16%, respectively. In this article, some examples of the semiconductor device process control, identification of contaminants, and failure analyses have been reviewed. The behavior of H, O, and Ti at the Pt/Ti/GaInZnO interfaces and their influences on the electrical property of thin film transistor are demonstrated. Also discolor issues including organic material contamination problem on Au pad are discussed in detail.

SIMS with low energy (down to 250 eV) primary ions has been widely used for ultra-shallow dopant profiling for ULSI device development. In spite of its high performance in depth resolution, there still remain ambiguities to be overcome in SIMS technique for accurate depth and concentration calibrations in the shallow depth regions. In order to get accurate ultra-shallow boron depth profiles, BN-delta-doped multilayer reference materials were developed and evaluated in a round-robin study using low energy SIMS. Those delta-doped layers were used to measure the sputter rate change in the initial stage of oxygen–ion bombardment.

This study reports the evaluation of an optical waveguide fabricated on a bulk-Si platform by using an epitaxially grown Si layer. The epitaxial growth of Si is obtained by the solid phase epitaxy (SPE) using a hot furnace annealing method. It is observed that an optical propagation loss of the waveguide decreases with increasing the epitaxially grown area in the waveguide. In this study, an epitaxial growth rate is greatly enhanced by an (100) growth orientation due to the lower atomic close packing density along the (100) orientation. The optical propagation loss is also improved with the (100) growth orientation because of the higher crystalline quality and full epitaxial growth of Si.

We firstly report the degradation analysis of multilayer structured WOLED by using spectroscopic and microscopic analytical methods. Our analytical results demonstrated that the interface between cathode and electron-transporting layer is responsible for the intrinsic long-term degradation of WOLEDs.