Search

Tensile strained-silicon waveguides were produced by LPCVD (780 °C) by depositing a 150 nm-thick Si 3 N 4 overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ(2) in the bulk silicon.

In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

Micro-Raman scattering experiments were performed on strained silicon waveguides designed for nonlinear optical experiments. Thin stressing silicon nitride (Si3N4 or SiNx) cladding layers, deposited on a light-guiding silicon core layer, strain silicon to enable χ(2), the second-order nonlinear susceptibility. Different deposition treatments allow varying the applied stress. The resulting strained waveguides are investigated by micro-Raman confocal spectroscopy performed on the waveguide facet. By modelling the measured Raman shifts, the local stress and strain are extracted. Thus, two-dimensional maps of the stress distribution as a function of the SiNx deposition parameters are drawn. A comparison of different samples allows underlying the non-uniformity of resulting strain.