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We report on the growth of monocrystalline thin films of ZnSe and ZnO by atomic layer epitaxy by simple reaction between elemental precursors. Structural and optical properties of these films are discussed with reference to the investigations performed with atomic force microscopy, scanning electron microscopy, cathodoluminescence and photoluminescence.

Optical properties of a series of CdTe/CdMnTe multi quantum weJl structures grown with MBE and ALE (CdTe quantum wells only) methods are compared. Based on the results of the photoluminescence experiments we conclude that the ALE growth leads to a different lateral scale of quantum welI width fluctuations, which results in different exciton properties in two multi quantum well systems studied. In the wells grown with ALE method excitons are less localized. They can migrate in a quantum well plane between quantum well regions varying in thickness by 1 monolayer. PACS numbers: 71.35.+z, 78.47.+p , 78.55.Et

The aim of our work was to produce p-n heterojunction with the high level of optical transmission. P-type NiO and n-type ZnO:Al films deposited by magnetron sputtering were used to fabricate p-n diodes. These were thermally processed in Ar ambient at 400°C in order to obtain high optical transmission and better electrical characteristics. The best diode's parameters were rectifying ratio of 6.7·104 and reverse current at the level of 6·10−7A at −3 V of bias. The best obtained optical transmission of the bilayer was near 20% in the visual wavelength region.

Generation of thermal donor centres in oxygen-rich silicon doped with boron and aluminium acceptors has been studied with the FTIR technique. It has been found that upon annealing 470°C two kinds of absorption series were generated. One of them belonged to the well-known first ionization 1eve1 of silicon thermal (double) donors (TD,s): TD° /TD+ . The second series was identified with the so-called shallow thermal donors (STD,s). The generation kinetics of the two series was followed for both kinds of acceptor doping and significant differences has been found. The results of the FTIR investigations were further compared with the magnetic resonance findings allowing for their mutual correlation and more general conclusions.

We report successful growth of thin films of ZnO by atomic layer epitaxy (ALE). Properties of the ZnO films grown by ALE on GaN/sapphire are described in relation to those grown by the same sequential procedure on uncoated sapphire and glass substrates. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Despite many efforts the origin of a ferromagnetic (FM) response in ZnMnO and ZnCoO is still not clear. Magnetic investigations of our samples, not discussed here, show that the room temperature FM response is observed only in alloys with a non-uniform Mn or Co distribution. Thus, the control of their distribution is crucial for explanation of contradicted magnetic properties of ZnCoO and ZnMnO reported till now. In the present review we discuss advantages of the Atomic Layer Deposition (ALD) growth method, which enables us to control uniformity of ZnMnO and ZnCoO alloys. Properties of ZnO, ZnMnO and ZnCoO films grown by the ALD are discussed., Comment: 41 pages, 19 figures, 48 references, review paper

In the hop conduction range, the dependence of the transverse magnetoresistance rho / rho 0 on the orientation and the magnitude of the magnetic induction beta (of several tesla) was studied in Ga-doped Ge samples with acceptor concentrations, NA, ranging from approximately=1-6*1015cm-3.