1. Nonaqueous organic electrolyte for photoelectrochemical etching of gallium nitride surface
- Author
-
Hui Huang, Wei-Xing Song, Ge-Bo Pan, Zu-Gang Wang, Miao-Rong Zhang, Chao Wang, Hong-Dan Peng, and Rui Xi
- Subjects
Materials science ,Aqueous solution ,business.industry ,General Physics and Astronomy ,Gallium nitride ,02 engineering and technology ,Electrolyte ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,chemistry.chemical_compound ,Semiconductor ,X-ray photoelectron spectroscopy ,chemistry ,Chemical engineering ,Etching (microfabrication) ,Physical and Theoretical Chemistry ,0210 nano-technology ,business ,Dissolution ,Electrochemical window - Abstract
Nonaqueous organic electrolyte was utilized to etch GaN via photo-electrochemical etching technique. From the point of electrochemical window, the organic electrolyte has wider electrochemical window than conventional aqueous etchants. SEM images show that the pore density is up to 1.2 × 107 per square centimeter. The difference of XPS spectra about survey, Ga 3d and N 1s between the non-etched and freshly etched GaN surface can be explained the formation of Ga(BF4)3. The proposed dissolution mechanism can be broadly applied for explaining the etching process of nonaqueous etchants under the assist of electric field and strong light.
- Published
- 2018