1. Highly In-Plane Anisotropic Two-Dimensional Ternary Ta2NiSe5 for Polarization-Sensitive Photodetectors
- Author
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Fu Feng, Guoping Zhang, Michael Geoffrey Somekh, Jie Qiao, Ziming Wang, Xiaocong Yuan, and Mengyan Shen
- Subjects
Materials science ,business.industry ,Transistor ,Photodetector ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,law.invention ,In plane ,Polarization sensitive ,law ,Optoelectronics ,General Materials Science ,0210 nano-technology ,Anisotropy ,Ternary operation ,business ,Saturation (magnetic) - Abstract
Intriguing anisotropic electrical and optoelectrical properties in two-dimensional (2D) materials are currently gaining increasing interest both for fundamental research and emerging optoelectronic devices. Identifying promising new 2D materials with low-symmetry structures will be rewarding in the development of polarization-integrated nanodevices. In this work, the anisotropic electron transport and optoelectrical properties of multilayer 2D ternary Ta2NiSe5 were systematically researched. The polarization-sensitive Ta2NiSe5 photodetector shows a linearly anisotropy ratio of ≈3.24 with 1064 nm illumination. The multilayer Ta2NiSe5-based field-effective transistors exhibit an excellent field-effective mobility of 161.25 cm2·V-1·s-1 along the a axis (armchair direction) as well as a great current saturation characteristic at room temperature. These results will promote a better understanding of the optoelectrical properties and applications in new categories of the in-plane anisotropic 2D materials.
- Published
- 2021