1. Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm
- Author
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O. L. Golikov, E. A. Tarasova, N. N. Grigoryeva, S. V. Obolensky, S. V. Khazanova, A. B. Ivanov, and A. S. Puzanov
- Subjects
Materials science ,Gate length ,02 engineering and technology ,01 natural sciences ,law.invention ,Compensation (engineering) ,Computer Science::Hardware Architecture ,Condensed Matter::Materials Science ,Computer Science::Emerging Technologies ,law ,0103 physical sciences ,010302 applied physics ,Condensed Matter::Other ,business.industry ,Transistor ,Doping ,Schottky diode ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Nonlinear system ,Optoelectronics ,Field-effect transistor ,0210 nano-technology ,business ,Fermi gas - Abstract
The nonlinearity of the gate–drain current–voltage characteristics in classical Schottky transistors and two-dimensional electron gas field-effect transistors based on AlGaAs/InGaAs/GaAs and InGaAs/GaAs compounds is analyzed. The carrier velocity-overshoot effect in the transistor channel is analyzed for various doping profiles of the structures under study.
- Published
- 2020
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