1. Polymer field-effect transistor memory based on a ferroelectric nylon gate insulator
- Author
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Beomjin Jeong, Mohammad Mahdi Abolhasani, Morteza Hassanpour Amiri, Wojciech Zajaczkowski, Saleem Anwar, and Kamal Asadi
- Subjects
chemistry.chemical_classification ,Organic electronics ,Fabrication ,Materials science ,business.industry ,Transistor ,General Chemistry ,Polymer ,Ferroelectricity ,law.invention ,chemistry ,law ,Materials Chemistry ,Microelectronics ,Optoelectronics ,Field-effect transistor ,Thin film ,business - Abstract
Nylons are one of the most successful commercialized polymers and can also be made to have ferroelectric properties. However, use of nylons in microelectronic devices like ferroelectric field-effect transistors has proven to be challenging due to the difficulty in achieving ferroelectric thin films by solution processing. In this work, we present ferroelectric field-effect transistor (FeFET) memory with a ferroelectric nylon-11 gate. Water quenching allows for the fabrication of ultra-smooth ferroelectric nylon-11 thin films. A bottom-gate top-contact (BGTC) FeFET is successfully demonstrated with a p-type semiconducting polymer, poly(triaryl amine) (PTAA), as a channel. The nylon-11 FeFET shows reliable memory functionality. The demonstration of nylon-11 based FeFETs makes nylons a promising material for applications in organic electronics, such as flexible devices, electronic textiles and biomedical devices.
- Published
- 2020
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