Search

The conventional pH sensor based on the graphene ion-sensitive field-effect transistor (Gr-ISFET), which operates with an electrostatic gating at the solution-graphene interface, cannot have a pH sensitivity above the Nernst limit (∼59 mV/pH). However, for accurate detection of the pH levels of an aqueous solution, an ultrasensitive pH sensor that can exceed the theoretical limit is required. In this study, a novel Gr-ISFET-based pH sensor is fabricated using proton-permeable defect-engineered graphene. The nanocrystalline graphene (nc-Gr) with numerous grain boundaries allows protons to penetrate the graphene layer and interact with the underlying pH-dependent charge-transfer dopant layer. We analyze the pH sensitivity of nc-Gr ISFETs by adjusting the grain boundary density of graphene and the functional group (OH-, NH2-, CH3-) on the SiO2 surface, confirming an unusual negative shift of the charge-neutral point (CNP) as the pH of the solution increases and a super-Nernstian pH response (approximately -140 mV/pH) under optimized conditions.

A novel semiconductor 1D nanomaterial, Nb2Se9, was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb2Se9 contains numerous single Nb2Se9 chains linked by van der Waals interactions, and we confirmed that a bundle of chains can be easily separated by mechanical cleavage. The exfoliated Nb2Se9 flakes exhibit a quasi-two-dimensional layered structure, and the number of layers can be controlled using the repeated-peeling method. The work function varied depending on the thickness of the Nb2Se9 flakes as determined by scanning Kelvin probe microscopy. Moreover, we first implemented a field effect transistor (FET) based on nanoscale Nb2Se9 flakes and verified that it has p-type semiconductor characteristics. This novel 1D material can form a new family of 2D materials and is expected to play important roles in future nano-electronic devices.

After the successful synthesis of graphene using chemical vapor deposition in 2009, the large-area/defect-free transfer method still remains a critical issue for implementing high-performance graphene-based electronic devices. Here, for the first time, we demonstrated a specially prepared water-soluble amorphous WO3 intermediate layer to effectively protect the graphene surface from immediately after its synthesis to transfer and final unit processing. Moreover, using the photodetector to which the proposed protection method was applied, the performance improvement was quantitatively verified. Compared with the control device, the surface-protected photodetector recorded a higher photoresponsivity of 1.74 times and faster temporal photoswitching response time of 4 s or more. The graphene surface protection method using the WO3 intermediate layer allows the reversibility in transfer process and performance enhancement of graphene-based electronic devices.

In this study, we successfully demonstrate the growth of an in-plane graphene/h-BN (GBN) heterostructure on a single crystal Ge (1 1 0) substrate. A group IV semiconductor Ge is an appropriate catalyst for the epitaxial growth of both graphene and h-BN. Thus, by sequentially introducing ammonia borane (NH3-BH3) and methane using two-zone low-pressure chemical vapor deposition (LPCVD), we obtained an in-plane GBN heterostructure. Based on microscopic and spectroscopic analyses, we confirmed that the edge of the pre-synthesized h-BN domains provides plentiful nucleating sites for the lateral epitaxial growth of graphene. Furthermore, we systematically controlled the area and density of h-BN domains in GBN and observed a change in the electrical conductivity of GBN based on the ratio of conducting graphene and insulating h-BN. This result conforms to the percolation theory of two-dimensional materials (2DMs). We believe that our synthetic approach could be a practical method for large-scale synthesis and property control of in-plane heterostructures and can be applied to various types of 2D heterostructures—potentially useful in a wide range of electronic applications.

The electrical and optical properties of semiconducting transition metal dichalcogenides (TMDs) can be tuned by controlling their composition and the number of layers they have. Among various TMDs, the monolayer WSe2 has a direct bandgap of 1.65 eV and exhibits p-type or bipolar behavior, depending on the type of contact metal. Despite these promising properties, a lack of efficient large-area production methods for high-quality, uniform WSe2 hinders its practical device applications. Various methods have been investigated for the synthesis of large-area monolayer WSe2, but the difficulty of precisely controlling solid-state TMD precursors (WO3, MoO3, Se, and S powders) is a major obstacle to the synthesis of uniform TMD layers. In this work, we outline our success in growing large-area, high-quality, monolayered WSe2 by utilizing methane (CH4) gas with precisely controlled pressure as a promoter. When compared to the catalytic growth of monolayered WSe2 without a gas-phase promoter, the catalytic growth of the monolayered WSe2 with a CH4 promoter reduced the nucleation density to 1/1000 and increased the grain size of monolayer WSe2 up to 100 μm. The significant improvement in the optical properties of the resulting WSe2 indicates that CH4 is a suitable candidate as a promoter for the synthesis of TMD materials, because it allows accurate gas control.