1. Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
- Author
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Marjorie A. Langell, Derek Sekora, Ufuk Kilic, Shah R. Valloppilly, Eva Schubert, Alyssa Mock, Simeon Gilbert, Natale J. Ianno, and Mathias Schubert
- Subjects
Materials science ,Oxide ,Materialkemi ,lcsh:Medicine ,02 engineering and technology ,Substrate (electronics) ,Surface finish ,01 natural sciences ,Article ,chemistry.chemical_compound ,Atomic layer deposition ,Engineering ,X-ray photoelectron spectroscopy ,Nanoscience and technology ,0103 physical sciences ,Materials Chemistry ,Thin film ,lcsh:Science ,010302 applied physics ,Multidisciplinary ,Physics ,lcsh:R ,021001 nanoscience & nanotechnology ,Titanium oxide ,Chemistry ,Optics and photonics ,chemistry ,Chemical engineering ,lcsh:Q ,0210 nano-technology ,Layer (electronics) - Abstract
We find that a five-phase (substrate, mixed native oxide and roughness interface layer, metal oxide thin film layer, surface ligand layer, ambient) model with two-dynamic (metal oxide thin film layer thickness and surface ligand layer void fraction) parameters (dynamic dual box model) is sufficient to explain in-situ spectroscopic ellipsometry data measured within and across multiple cycles during plasma-enhanced atomic layer deposition of metal oxide thin films. We demonstrate our dynamic dual box model for analysis of in-situ spectroscopic ellipsometry data in the photon energy range of 0.7-3.4eV measured with time resolution of few seconds over large numbers of cycles during the growth of titanium oxide (TiO2) and tungsten oxide (WO3) thin films, as examples. We observe cyclic surface roughening with fast kinetics and subsequent roughness reduction with slow kinetics, upon cyclic exposure to precursor materials, leading to oscillations of the metal thin film thickness with small but positive growth per cycle. We explain the cyclic surface roughening by precursor-surface interactions leading to defect creation, and subsequent surface restructuring. Atomic force microscopic images before and after growth, x-ray photoelectron spectroscopy, and x-ray diffraction investigations confirm structural and chemical properties of our thin films. Our proposed dynamic dual box model may be generally applicable to monitor and control metal oxide growth in atomic layer deposition, and we include data for SiO2 and Al2O3 as further examples. Funding Agencies|National Science Foundation (NSF) through the Nebraska Materials Research Science and Engineering Center (MRSEC)National Science Foundation (NSF) [DMR-1420645, CMMI 1337856, DMR 1808715]; Air Force Research Office [FA9550-18-1-0360]; American Chemical SocietyAmerican Chemical Society [ACS PRF 59374-ND5]; University of Nebraska-Lincoln; J. A. Woollam Co., Inc.; J. A. Woollam Foundation
- Published
- 2020
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