1. A nanoscale AlGaN/GaN HEMT on BGO substrate with recessed T gate for high frequency applications
- Author
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S. Anju, V. Suresh Babu, Biji Jacob, and Geenu Paul
- Subjects
Materials science ,business.industry ,Oscillation ,Terahertz radiation ,Transconductance ,Optoelectronics ,General Medicine ,Substrate (electronics) ,High-electron-mobility transistor ,Radio frequency ,business ,Current density ,Nanoscopic scale - Abstract
In this paper a recess gate AlGaN/GaN HEMT on beta gallium oxide (BGO) is designed and analysed using Silvaco ATLAS TCAD software. The DC and RF performance of the device is compared with a schottky gate AlGaN/GaN HEMT on BGO substrate. For optimizing the gate recess depth, three variations with recess depths 6 nm, 12 nm and 20 nm is also simulated. A highest transconductance of 0.4 mS/ µm is observed for recess gate AlGaN/GaN HEMT on BGO substrate with a recess gate depth of 20 nm with a decrease in current density. The radio frequency performance is also highest for the recess gate AlGaN/GaN HEMT with recess gate depth of 20 nm. The device exhibited a maximum oscillation frequency of 2.6 THZ which is highest till reported.
- Published
- 2023