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We explore the degradation behaviour under continuous illumination and direct oxygen exposure of inverted unencapsulated formamidinium(FA)0.83Cs0.17Pb(I0.8Br0.2)3, CH3NH3PbI3, and CH3NH3PbI3−xClx perovskite solar cells. We continuously test the devices in-situ and in-operando with current-voltage sweeps, transient photocurrent, and transient photovoltage measurements, and find that degradation in the CH3NH3PbI3−xClx solar cells due to oxygen exposure occurs over shorter timescales than FA0.83Cs0.17Pb(I0.8Br0.2)3 mixed-cation devices. We attribute these oxygen-induced losses in the power conversion efficiencies to the formation of electron traps within the perovskite photoactive layer. Our results highlight that the formamidinium-caesium mixed-cation perovskites are much less sensitive to oxygen-induced degradation than the methylammonium-based perovskite cells, and that further improvements in perovskite solar cell stability should focus on the mitigation of trap generation during ageing.

Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in key properties such as luminescence efficiency and device performance. This behavior has been attributed to spatial fluctuations in the population of sub-bandgap electronic states that act as trap-mediated non-radiative recombination sites. However, the origin of the variations, trap states and extent of the defect tolerance remains a topic of debate, and a precise understanding is critical to the rational design of defect management strategies. By combining scanning X-ray diffraction beamlines at two different synchrotrons with high-resolution transmission electron microscopy, we reveal levels of heterogeneity on the ten-micrometer scale (super-grains) and even ten-nanometer scale (sub-grain domains). We find that local strain is associated with enhanced defect concentrations, and correlations between the local structure and time-resolved photoluminescence reveal that these strain-related defects are the cause of non-radiative recombination. We reveal a direct connection between defect concentrations and non-radiative losses, as well as complex heterogeneity across multiple length scales, shedding new light on the presence and influence of structural defects in halide perovskites.

Metal halide perovskites are attracting tremendous interest for a variety of optoelectronic applications. The ability to tune the perovskite bandgap by tweaking the chemical compositions opens up new applications as coloured emitters and as components of tandem photovoltaics. Nevertheless, non-radiative losses are still limiting performance, with luminescence yields in state-of-the-art perovskite solar cells still far from 100% under solar illumination conditions. Furthermore, in mixed halide perovskite systems designed for continuous bandgap tunability (bandgaps ~1.7-1.9 eV), photo-induced ion segregation leads to bandgap instabilities. Here, we substantially mitigate both non-radiative losses and photo-induced ion migration in perovskite structures by decorating the surfaces and grain boundaries with passivating potassium-halide interlayers. We demonstrate external photo-luminescence quantum yields of 66%, translating to internal yields exceeding 95%. The high luminescence yields are achieved while maintaining high mobilities over 40 cm2V-1s-1, giving the elusive combination of both high luminescence and excellent charge transport. We find that the external luminescence yield when interfaced with electrodes in a solar cell device stack, a quantity that must be maximized to approach the efficiency limits, remains as high as 15%, indicating very clean interfaces. We also demonstrate the inhibition of photo-induced ion migration processes across a wide range of mixed halide perovskite bandgaps that otherwise show bandgap instabilities. We validate these results in full operating solar cells, highlighting the importance of stabilising luminescence in device structures. Our work represents a critical breakthrough in the construction of tunable halide perovskite films and interfaces that can approach the efficiency limits in tandem solar cells and coloured LEDs.

The incorporation of noble metal nanoparticles, displaying localized surface plasmon resonance, in the active area of donor-acceptor bulk-heterojunction organic photovoltaic devices is an industrially compatible light trapping strategy, able to guarantee better absorption of the incident photons and give an efficiency improvement between 12% and 38%. In the present work, we investigate the effect of Au and Ag nanoparticles blended with P3HT: PCBM on the P3HT crystallization dynamics by synchrotron grazing incidence X-ray diffraction. We conclude that the presence of (1) 80nm Au, (2) mix of 5nm, 50nm, 80nm Au, (3) 40nm Ag, and (4) 10nm, 40nm, 60nm Ag colloidal nanoparticles, at different concentrations below 0.3 wt% in P3HT: PCBM blends, does not affect the behaviour of the blends themselves.

Atomic Force Microscopy (AFM) and Grazing Incidence X-Ray Diffraction (GI-XRD) are used to characterize the nanomorphology of spin-coated low (LMW, Mn = 12 kg/mol, regioregularity RR = 84%) and high (HMW, Mn = 39 kg/mol, RR = 98%) molecular weight poly(3-hexylselenophene) (P3HS) films and blend films of P3HS with [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), before and after thermal annealing at 250 {\deg}C.