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Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained \b{eta}-(AlxGa1-x)2O3 films are demonstrated with up to 25% Al compositions as evaluated by high resolution x-ray diffraction (XRD). The asymmetrical reciprocal space mapping confirms the growth of coherent \b{eta}-(AlxGa1-x)2O3 films (x < 25%) on (001) \b{eta}-Ga2O3 substrates. While the films show smooth surface morphologies, the alloy inhomogeneity with local segregation of Al along (-201) plane is observed from atomic resolution STEM imaging, resulting in wavy and inhomogeneous interfaces in \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 superlattice structure. Room temperature Raman spectra of \b{eta}-(AlxGa1-x)2O3 films show similar characteristics peaks as (001) \b{eta}-Ga2O3 substrate without obvious Raman shifts for films with different Al compositions. Atom probe tomography (APT) was used to investigate the atomic level structural chemistry with increasing Al content in the \b{eta}-(AlxGa1-x)2O3 films. A monotonous increase in chemical heterogeneity is observed from the in-plane Al/Ga distributions which was further confirmed via statistical frequency distribution analysis (FDA). Although the films exhibit alloy fluctuations, n-type doping with good electrical properties are demonstrated for films with various Al compositions. The determined valence and conduction band offsets at \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 heterojunctions using x-ray photoelectron spectroscopy (XPS) reveal the formation of type-II (staggered) band alignment.

The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demonstrate vertical devices. This paper presents the first demonstration of in situ Mg-doped beta-Ga2O3 CBLs grown using metalorganic chemical vapor deposition. Device structures were designed with in-situ Mg doped layers with varied targeted Mg doping concentrations, which were calibrated by quantitative secondary ion mass spectroscopy (SIMS). The effectiveness of the CBL is characterized using temperature dependent current-voltage measurements using n-Mg-doped-n structures, providing crucial insight into the underlying mechanisms. To further validate the experimental results, a TCAD simulation is performed and the electrically active effective doping is found to be dependent on the Mg-doping density, offering a new perspective on the optimization of CBL performance. Breakdown measurements show a 3.4 MV/cm field strength. This study represents a significant step forward in the development of Ga2O3-based devices and paves the way for future advancements in this exciting field.

This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm thin channel MOSFET was grown by Molecular Beam Epitaxy (MBE) and highly doped (n++) contact regrowth was carried out by Metal Organic Chemical Vapour Deposition (MOCVD) in the source/drain region. Maximum on current (IDS, MAX) of 160 mA/mm and transconductance (gm) around 36 mS/mm was measured at VDS= 10 V for LSD= 1.5 micrometer channel length. Transconductance is limited by higher channel sheet resistance (Rsheet). We observed no current collapse for both drain and gate lag measurement even at higher VDG,Q quiescent bias points. This is the first report of Ga2O3 FET showing no current collapse without any external passivation. Breakdown voltage around 125 V was reported for LGD= 1.2 micrometer. We extracted 27 GHz current gain cut off frequency (fT) and 100 GHz fMAX for 20 V drain bias. fMAX value mentioned here is the highest for Ga2O3 and the first demonstration of 100 GHz operation. fT. VBR product of 3.375 THz.V has been calculated which is comparable with state-of-art GaN HEMT. This letter suggests that Ga2O3 can be a suitable candidate for X-band application.

The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al$_2$O$_3$ dielectrics on $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films is investigated as a function of crystal orientations and Al compositions of $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The interface and film qualities of Al$_2$O$_3$ dielectrics are evaluated by high resolution X-ray diffraction (HR-XRD) and scanning transmission electron microscopy (HR-STEM) imaging, which indicate the growth of high quality amorphous Al$_2$O$_3$ dielectrics with abrupt interfaces on (010), (100) and (-201) oriented $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films. The surface stoichiometries of Al$_2$O$_3$ deposited on all orientations of $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ are found to be well maintained with a bandgap energy of 6.91 eV as evaluated by high resolution x-ray photoelectron spectroscopy, which is consistent with the atomic layer deposited (ALD) Al$_2$O$_3$ dielectrics. The evolution of band offsets at both in-situ MOCVD and ex-situ ALD deposited Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ are determined as a function of Al composition, indicating the influence of the deposition method, orientation, and Al composition of $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ films on resulting band alignments. Type II band alignments are determined at the MOCVD grown Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ interfaces for (010) and (100) orientations, whereas type I band alignments with relatively lower conduction band offsets are observed along (-201) orientation. Results from this work revealed that the in-situ MOCVD deposited high quality Al$_2$O$_3$ dielectrics with sharp interfaces can be considered as a viable alternative of commonly used ex-situ deposited (ALD) Al$_2$O$_3$ for developing high performance $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ based devices.

This letter reports high-performance $\mathrm{\beta} Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-200 nm) leads to a peak drain current (ID,MAX) of 285 mA/mm and peak trans-conductance (gm) of 52 mS/mm at 10 V drain bias with 23.5 Ohm mm on resistance (Ron). A low metal/n+ contact resistance of 0.078 Ohm mm was extracted from TLM measurement. Ron is dominated by interface resistance between channel and regrown layer. A gate-to-drain breakdown voltage of 192 V is measured for LGD = 355 nm resulting in average breakdown field (E_AVG) of 5.4 MV/cm. This E_AVG is the highest reported among all sub-micron gate length lateral FETs. RF measurements on 200 nm Silicon Nitride (Si3N4) passivated device shows a current gain cut off frequency (f_T) of 11 GHz and record power gain cut off frequency (f_MAX) of 48 GHz. The f_T.V_Br product is 2.11 THz.V for 192 V breakdown voltage. The switching figure of merit exceeds that of silicon and is comparable to mature wide-band gap devices.

Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on GaN-, AlN-on sapphire, and YSZ substrates through a systematical tuning of the growth parameters including the precursor molar flow rates, chamber pressure and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of \b{eta}- and \k{appa}polymorphs of Ga2O3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology and roughness of \k{appa}-Ga2O3 films grown on different substrates are investigated as a function of precursor flow rate. High resolution scanning transmission electron microscopy (HR-STEM) imaging of \k{appa}-Ga2O3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN and YSZ substrates. The growth of single crystal orthorhombic \k{appa}Ga2O3 films is confirmed by analyzing the STEM nano-diffraction pattern. The chemical composition, surface stoichiometry, and the bandgap energies of \k{appa}-Ga2O3 thin films grown on different substrates are studied by high resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between \k{appa}-Ga2O3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with the exception of \k{appa}-Ga2O3/GaN interface, which shows type I (straddling) band alignment.