1. Growth behavior and microstructure of oxide scales grown on WSi2 coating
- Author
-
Kyung Tae Hong, Jung-Mann Doh, Jin-Kook Yoon, Sook-In Kwun, Han-Sung Kim, and Gyeung-Ho Kim
- Subjects
Materials science ,Mechanical Engineering ,Diffusion ,Metallurgy ,Metals and Alloys ,Oxide ,General Chemistry ,engineering.material ,Microstructure ,Cristobalite ,Isothermal process ,Amorphous solid ,chemistry.chemical_compound ,Chemical engineering ,chemistry ,Coating ,Mechanics of Materials ,Materials Chemistry ,engineering ,Lamellar structure - Abstract
Growth behavior and microstructure of oxide scales formed on WSi 2 coating by isothermal oxidation between 800 and 1300 °C were investigated. At and below 1000 °C, lamellar WO 3 embedded in the amorphous SiO 2 matrix was formed from the direct oxidation of WSi 2 by inward diffusion of oxygen through short-circuit paths. At the intermediate temperatures between 1100 and 1200 °C, fastest oxidation rate was observed. The oxide scale consisted of the spheroidal WO 3 particles embedded in the amorphous SiO 2 matrix. WSi 2 was initially oxidized to form W 5 Si 3 and SiO 2 followed by the oxidation of W 5 Si 3 to form WO 3 and SiO 2 phases. At 1300 °C, oxide scale consisted of continuous cristobalite SiO 2 and W 5 Si 3 layer underneath, leading to the slowest isothermal oxidation behavior. It is concluded that the interplay of phase stability of WSi 2 , defect formation process, and viscosity of SiO 2 gives rise to unique and complex oxidation behavior especially at intermediate temperatures.
- Published
- 2008
- Full Text
- View/download PDF