1. Effect of annealing on microhardness and electrical resistivity of nanostructured SPD aluminium.
- Author
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Mavlyutov, A.M., Bondarenko, A.S., Murashkin, M.Yu., Boltynjuk, E.V., Valiev, R.Z., and Orlova, T.S.
- Subjects
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ALUMINUM , *ANNEALING of metals , *MICROHARDNESS , *ELECTRICAL resistivity , *NANOSTRUCTURED materials , *CRYSTAL grain boundaries - Abstract
The influence of microstructure evolution on microhardness and electrical resistivity of ultrafine grained (UFG) commercial purity Al under annealing at different temperatures within a range of 363–673 K was studied. The initially coarse grained Al was processed by high pressure torsion (HPT) technique for the formation of UFG structure. The microstructure was characterized by electron backscattering diffraction and X-Ray diffraction. It was shown that annealing of UFG Al at temperatures within a range of 363–473 K leads to simultaneous increase of microhardness (by 6–13%) and electrical conductivity (by 4–8% at 300 K). The correlation between microstructural features and the resulting properties were analyzed. The average width s of potential barriers at grain boundaries (GBs) in HPT-processed Al was estimated in the frame of a tunnel model. The obtained large value of s compared with the GB crystallographic width is associated with elastically distorted lattice near GBs. The obtained results suggest a new way to increase simultaneously strength and electrical conductivity of UFG Al alloys by an appropriate annealing. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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