22 results on '"Kvatinsky, Shahar"'
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2. Logic with Unipolar Memristors – Circuits and Design Methodology
- Author
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Wald, Nimrod, Amrani, Elad, Drori, Avishay, Kvatinsky, Shahar, Rannenberg, Kai, Editor-in-chief, Sakarovitch, Jacques, Series editor, Goedicke, Michael, Series editor, Tatnall, Arthur, Series editor, Neuhold, Erich J., Series editor, Pras, Aiko, Series editor, Tröltzsch, Fredi, Series editor, Pries-Heje, Jan, Series editor, Whitehouse, Diane, Series editor, Reis, Ricardo, Series editor, Furnell, Steven, Series editor, Furbach, Ulrich, Series editor, Winckler, Marco, Series editor, Rauterberg, Matthias, Series editor, Hollstein, Thomas, editor, Raik, Jaan, editor, Kostin, Sergei, editor, Tšertov, Anton, editor, and O'Connor, Ian, editor
- Published
- 2017
- Full Text
- View/download PDF
3. Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)
- Author
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Hoffer, Barak, Rana, Vikas, Menzel, Stephan, and Kvatinsky, Shahar
- Subjects
memristor aided logic (MAGIC) ,processing-in-memory (PIM) ,Logic-in-memory ,memristor ,valence change memory (VCM) - Abstract
Memristor-aided logic (MAGIC) is a technique for performing in-memory computing using memristive devices. The design of a MAGIC NOR gate has been described in detail, and it serves as the basic building block for several processing-in-memory architectures. However, the input stability of the MAGIC NOR gate forces a limitation on the threshold voltages: the magnitude of the set voltage must be higher than the magnitude of the reset voltage. Unfortunately, many of the current leading resistive switching technologies, particularly, valence change memory (VCM), have the opposite ratio between the threshold voltages. In this article, we experimentally demonstrate the undesirable effects of input instability. Furthermore, we introduce three new MAGIC gates for devices with low set-to-reset voltage ratios and experimentally demonstrate their robust operation using Pt/Ta2O5/W/Pt devices. The three gates, combined with constant values, are functionally complete and are demonstrated as building blocks for in-memory logic on VCM devices.
- Published
- 2020
4. MultPIM: Fast Stateful Multiplication for Processing-in-Memory.
- Author
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Leitersdorf, Orian, Ronen, Ronny, and Kvatinsky, Shahar
- Abstract
Processing-in-memory (PIM) seeks to eliminate computation/memory data transfer using devices that support both storage and logic. Stateful logic techniques such as IMPLY, MAGIC and FELIX can perform logic gates within memristive crossbar arrays with massive parallelism. Multiplication via stateful logic is an active field of research due to the wide implications. Recently, RIME has become the state-of-the-art algorithm for stateful single-row multiplication by using memristive partitions, reducing the latency of the previous state-of-the-art by ${5.1\times }$. In this brief, we begin by proposing novel partition-based computation techniques for broadcasting and shifting data. Then, we design an in-memory multiplication algorithm based on the carry-save add-shift (CSAS) technique. Finally, we develop a novel stateful full-adder that significantly improves the state-of-the-art (FELIX) design. These contributions constitute MultPIM, a multiplier that reduces state-of-the-art time complexity from quadratic to linear-log. For 32-bit numbers, MultPIM improves latency by an additional ${4.2\times }$ over RIME, while even slightly reducing area overhead. Furthermore, we optimize MultPIM for full-precision matrix-vector multiplication and improve latency by ${25.5\times }$ over FloatPIM matrix-vector multiplication. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF
5. multiPULPly: A Multiplication Engine for Accelerating Neural Networks on Ultra-low-power Architectures.
- Author
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ELIAHU, ADI, RONEN, RONNY, GAILLARDON, PIERRE-EMMANUEL, and KVATINSKY, SHAHAR
- Subjects
MULTIPLICATION ,ENERGY consumption ,MEMRISTORS ,NETWORK performance ,MICROCONTROLLERS - Abstract
Computationally intensive neural network applications often need to run on resource-limited low-power devices. Numerous hardware accelerators have been developed to speed up the performance of neural network applications and reduce power consumption; however, most focus on data centers and full-fledged systems. Acceleration in ultra-low-power systems has been only partially addressed. In this article, we present multiPULPly, an accelerator that integrates memristive technologies within standard low-power CMOS technology, to accelerate multiplication in neural network inference on ultra-low-power systems. This accelerator was designated for PULP, an open-source microcontroller system that uses low-power RISC-V processors. Memristors were integrated into the accelerator to enable power consumption only when the memory is active, to continue the task with no context-restoring overhead, and to enable highly parallel analog multiplication. To reduce the energy consumption, we propose novel dataflows that handle common multiplication scenarios and are tailored for our architecture. The accelerator was tested on FPGA and achieved a peak energy efficiency of 19.5 TOPS/W, outperforming state-of-the-art accelerators by 1.5× to 4.5×. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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- View/download PDF
6. SIMPLER MAGIC: Synthesis and Mapping of In-Memory Logic Executed in a Single Row to Improve Throughput.
- Author
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Ben-Hur, Rotem, Ronen, Ronny, Haj-Ali, Ameer, Bhattacharjee, Debjyoti, Eliahu, Adi, Peled, Natan, and Kvatinsky, Shahar
- Subjects
LOGIC design ,LOGIC ,MODERN architecture ,COMPUTER architecture ,COMPUTER systems - Abstract
In-memory processing can dramatically improve the latency and energy consumption of computing systems by minimizing the data transfer between the memory and the processor. Efficient execution of processing operations within the memory is therefore, a highly motivated objective in modern computer architecture. This article presents a novel automatic framework for efficient implementation of arbitrary combinational logic functions within a memristive memory. Using tools from logic design, graph theory and compiler register allocation technology, we developed synthesis and in-memory mapping of logic execution in a single row (SIMPLER), a tool that optimizes the execution of in-memory logic operations in terms of throughput and area. Given a logical function, SIMPLER automatically generates a sequence of atomic memristor-aided logic (MAGIC) NOR operations and efficiently locates them within a single size-limited memory row, reusing cells to save area when needed. This approach fully exploits the parallelism offered by the MAGIC NOR gates. It allows multiple instances of the logic function to be performed concurrently, each compressed into a single row of the memory. This virtue makes SIMPLER an attractive candidate for designing in-memory single instruction, multiple data (SIMD) operations. Compared to the previous work (that optimizes latency rather than throughput for a single function), SIMPLER achieves an average throughput improvement of 435 ×. When the previous tools are parallelized similarly to SIMPLER, SIMPLER achieves higher throughput of at least 5 ×, with 23 × improvement in area and 20 × improvement in area efficiency. These improvements more than fully compensate for the increase (up to 17% on average) in latency. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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7. Understanding the influence of device, circuit and environmental variations on real processing in memristive memory using Memristor Aided Logic.
- Author
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Wald, Nimrod and Kvatinsky, Shahar
- Subjects
- *
LOGIC circuits , *MEMORY , *POWER resources , *LOGIC , *ON-chip charge pumps , *MEMRISTORS - Abstract
Memristors have gained increasing interest recently as emerging memory technologies. Their unique ability to perform logic operations within the memory makes them even more attractive. MAGIC NOR is one such logic gate that can be integrated within memristive memory cells, thus opening possibilities for real in-memory computing. This paper explores the integration of MAGIC NOR gates within large-scale memory crossbar arrays. We evaluate both analytically and numerically different non-ideality parameters that influence the logic gate performance. First, we investigate the effect of parasitic resistance and capacitance within the memory array. Then, process and device variations are considered and modeled, as well as environmental conditions such as temperature and power supply variations. These non-idealities are formulated in the form of process corners that enable designers to estimate the effect of variations on their design in worst case scenarios, similar to the manner in which such effects are estimated in CMOS-based VLSI design. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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8. CONCEPT: A Column-Oriented Memory Controller for Efficient Memory and PIM Operations in RRAM.
- Author
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Talati, Nishil, Ha, Heonjae, Perach, Ben, Ronen, Ronny, and Kvatinsky, Shahar
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NONVOLATILE random-access memory ,SCALABILITY ,VON Neumann architecture (Computers) ,PERFORMANCE evaluation ,ENERGY consumption - Abstract
While DRAM cannot easily scale below a 20-nm technology node, RRAM suffers far less from scalability issues. Moreover, RRAM's resistivity enables its use for processing-in-memory (PIM), potentially alleviating the von Neumann bottleneck. Unfortunately, because of technological idiosyncrasies, existing DRAM-centric memory controllers cannot exploit the full potential of resistive RAM (RRAM). In this paper, we present the design of a memory controller called CONCEPT. The controller is optimized to exploit unique properties of RRAM to enhance its performance and energy efficiency as well as exploiting RRAM's PIM capability. We show that with CONCEPT, RRAM can achieve DRAM-like performance and energy efficiency on SPEC CPU 2006 benchmarks. Furthermore, using RRAM PIM capabilities, we show a 5× performance gain on a data-intensive in-memory database workload compared to a state-of-the-art CPU-memory computing model. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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9. Not in Name Alone: A Memristive Memory Processing Unit for Real In-Memory Processing.
- Author
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Haj-Ali, Ameer, Ben-Hur, Rotem, Wald, Nimrod, Ronen, Ronny, and Kvatinsky, Shahar
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COMPUTER storage devices ,IMAGE processing ,DATA analysis ,ELECTRONIC data processing ,COMPUTER architecture - Abstract
Data movement between processing and memory is the root cause of the limited performance and energy efficiency in modern von Neumann systems. To overcome the data-movement bottleneck, we present the memristive Memory Processing Unit (mMPU)-a real processing-in-memory system in which the computation is done directly in the memory cells, thus eliminating the necessity for data transfer. Furthermore, with its enormous inner parallelism, this system is ideal for data-intensive applications that are based on single instruction, multiple data (SIMD)-providing high throughput and energy-efficiency. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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10. Analysis of the row grounding technique in a memristor‐based crossbar array.
- Author
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Dozortsev, Alexander, Goldshtein, Israel, and Kvatinsky, Shahar
- Subjects
MEMRISTORS ,ENERGY consumption ,COMPLEMENTARY metal oxide semiconductors ,ELECTRIC resistors ,RANDOM access memory - Abstract
Summary: Using memristive devices within a crossbar array could pave the way for memories with higher density and speed than state‐of‐the‐art Flash memory, while maintaining relatively low energy. However, memristive crossbar arrays have great difficulty distinguishing logical states because of sneak path currents. The row grounding technique eliminates the sneak path effect, allowing reliable sampling of the memristor state. In this paper, we analyze the row grounding technique and propose several methods and constraints for the design of memristive crossbar arrays. When the row grounding technique is used for these arrays, our analysis shows that increasing the number of rows can help reduce read latency and energy, in contrast to the case of capacitive memory arrays. Simulation results confirm the theoretical analysis proposed in this paper. Copyright © 2017 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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11. Supporting the Momentum Training Algorithm Using a Memristor-Based Synapse.
- Author
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Greenberg-Toledo, Tzofnat, Mazor, Roee, Haj-Ali, Ameer, and Kvatinsky, Shahar
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SYNAPSES ,BIOLOGICAL neural networks ,ARTIFICIAL neural networks - Abstract
Despite the increasing popularity of deep neural networks (DNNs), they cannot be trained efficiently on existing platforms, and efforts have thus been devoted to designing dedicated hardware for DNNs. In our recent work, we have provided direct support for the stochastic gradient descent (SGD) training algorithm by constructing the basic element of neural networks, the synapse, using emerging technologies, namely memristors. Due to the limited performance of SGD, optimization algorithms are commonly employed in DNN training. Therefore, DNN accelerators that only support SGD might not meet DNN training requirements. In this paper, we present a memristor-based synapse that supports the commonly used momentum algorithm. Momentum significantly improves the convergence of SGD and facilitates the DNN training stage. We propose two design approaches to support momentum: 1) a hardware friendly modification of the momentum algorithm using memory external to the synapse structure, and 2) updating each synapse with a built-in memory. Our simulations show that the proposed DNN training solutions are as accurate as training on a GPU platform while speeding up the performance by $886\times $ and decreasing energy consumption by $7\times $ , on average. [ABSTRACT FROM AUTHOR]
- Published
- 2019
- Full Text
- View/download PDF
12. Logic Design Within Memristive Memories Using Memristor-Aided loGIC (MAGIC).
- Author
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Talati, Nishil, Gupta, Saransh, Mane, Pravin, and Kvatinsky, Shahar
- Abstract
Realizing logic operations within passive crossbar memory arrays is a promising approach to enable novel computer architectures, different from conventional von Neumann architecture. Attractive candidates to enable such architectures are memristors, nonvolatile memory elements commonly used within a crossbar, that can also perform logic operations. In such novel architectures, data are stored and processed within the same entity, which we term as memristive memory processing unit (MPU). In this paper, Memristor-Aided loGIC (MAGIC) family is discussed with various design considerations and novel techniques to execute logic within an MPU. We present a novel resistive memory—the transpose memory, which adds additional functionality to the memristive memory, and compare it with a conventional memristive memory. A case study of an adder is presented to demonstrate the design issues discussed in this paper. We compare the proposed design techniques with the memristive IMPLY logic in terms of speed, area, and energy. Our evaluation shows that the proposed MAGIC design is 2.4 $\times$ faster and consumes 66.3% less energy as compared with the IMPLY-based computing for N-bit addition within memristive crossbar memory. Additionally, we compare the proposed design with IMPLY logic family on ISCAS-85 benchmarks, which shows significant improvements in speed (2$\times$) and energy (10 $\times$), with similar area. [ABSTRACT FROM PUBLISHER]
- Published
- 2016
- Full Text
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13. Multistate Register Based on Resistive RAM.
- Author
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Patel, Ravi, Kvatinsky, Shahar, Friedman, Eby G., and Kolodny, Avinoam
- Subjects
RANDOM access memory ,CONTINUOUS flow reactors ,COMPUTER storage devices ,NONVOLATILE random-access memory ,SIMULTANEOUS multithreading processors ,COMPLEMENTARY metal oxide semiconductors - Abstract
In recent years, memristive technologies, such as resistive random access memory (RRAM), have emerged. These technologies are usually considered as alternates for static RAM, dynamic RAM, and Flash. In this paper, a novel digital circuit, the multistate register, is proposed. The multistate register is different from conventional types of memory, and is used to store multiple data bits, where only a single bit is active and the remaining data bits are idle. The active bit is stored within a CMOS flip flop, while the idle bits are stored in an RRAM crossbar co-located with the flip flop. It is demonstrated that additional states require an area overhead of 1.4% per state for a 64-state register. The use of multistate registers as pipeline registers is demonstrated for a novel multithreading architecture—continuous flow multithreading (CFMT), where the total area overhead in the CPU pipeline is only 2.5% for 16 threads compared with a single thread CMOS pipeline. The use of multistate registers in the CFMT microarchitecture enables higher performance processors (40% average performance improvement) with relatively low energy (6.5% average energy reduction) and area overhead. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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14. VTEAM: A General Model for Voltage-Controlled Memristors.
- Author
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Kvatinsky, Shahar, Ramadan, Misbah, Friedman, Eby G., and Kolodny, Avinoam
- Abstract
Memristors are novel electrical devices used for a variety of applications, including memory, logic circuits, and neuromorphic systems. Memristive technologies are attractive due to their nonvolatility, scalability, and compatibility with CMOS. Numerous physical experiments have shown the existence of a threshold voltage in some physical memristors. Additionally, as shown in this brief, some applications require voltage-controlled memristors to operate properly. In this brief, a Voltage ThrEshold Adaptive Memristor (VTEAM) model is proposed to describe the behavior of voltage-controlled memristors. The VTEAM model extends the previously proposed ThrEshold Adaptive Memristor (TEAM) model, which describes current-controlled memristors. The VTEAM model has similar advantages as the TEAM model, i.e., it is simple, general, and flexible, and can characterize different voltage-controlled memristors. The VTEAM model is accurate (below 1.5% in terms of the relative root-mean-square error) and computationally efficient as compared with existing memristor models and experimental results describing different memristive technologies. [ABSTRACT FROM PUBLISHER]
- Published
- 2015
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15. Resistive Associative Processor.
- Author
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Yavits, Leonid, Kvatinsky, Shahar, Morad, Amir, and Ginosar, Ran
- Abstract
Associative Processor (AP) combines data storage and data processing, and functions simultaneously as a massively parallel array SIMD processor and memory. Traditionally, AP is based on CMOS technology, similar to other classes of massively parallel SIMD processors. The main component of AP is a Content Addressable Memory (CAM) array. As CMOS feature scaling slows down, CAM experiences scalability problems. In this work, we propose and investigate an AP based on resistive CAM—the Resistive AP (ReAP). We show that resistive memory technology potentially allows scaling the AP from a few millions to a few hundred millions of processing units on a single silicon die. We compare the performance and power consumption of a ReAP to a CMOS AP and a conventional SIMD accelerator (GPU) and show that ReAP, although exhibiting higher power density, allows better scalability and higher performance. [ABSTRACT FROM PUBLISHER]
- Published
- 2015
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16. Models of memristors for SPICE simulations.
- Author
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Kvatinsky, Shahar, Talisveyberg, Keren, Fliter, Dmitry, Kolodny, Avinoam, Weiser, Uri C., and Friedman, Eby G.
- Abstract
Memristors are novel devices which can be used in applications such as memory, logic, analog circuits, and neuromorphic systems. Several memristor technologies have been developed such as ReRAM (Resistive RAM), MRAM (Magnetoresistance RAM), and PCM (Phase Change Memory). To design circuits with memristors, the behavior of the memristor needs to be described by a mathematical model. While the model for memristors should be sufficiently accurate as compared to the behavior of physical devices, the model must also be computationally efficient. Several models for memristors have been proposed — the linear ion drift model, the nonlinear ion drift model, the Simmons tunnel barrier model, and the ThrEshold Adaptive Memristor (TEAM) model. In this paper, the different memristor models are described and a Verilog-A implementation for these models, including the relevant window functions, are presented. These models are suitable for EDA tools such as SPICE. [ABSTRACT FROM PUBLISHER]
- Published
- 2012
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17. Memristor-Based Material Implication (IMPLY) Logic: Design Principles and Methodologies.
- Author
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Kvatinsky, Shahar, Satat, Guy, Wald, Nimrod, Friedman, Eby G., Kolodny, Avinoam, and Weiser, Uri C.
- Subjects
MEMRISTORS ,ELECTRONIC circuits ,LOGIC circuits ,COMPUTER architecture ,COMPUTER storage devices - Abstract
Memristors are novel devices, useful as memory at all hierarchies. These devices can also behave as logic circuits. In this paper, the IMPLY logic gate, a memristor-based logic circuit, is described. In this memristive logic family, each memristor is used as an input, output, computational logic element, and latch in different stages of the computing process. The logical state is determined by the resistance of the memristor. This logic family can be integrated within a memristor-based crossbar, commonly used for memory. In this paper, a methodology for designing this logic family is proposed. The design methodology is based on a general design flow, suitable for all deterministic memristive logic families, and includes some additional design constraints to support the IMPLY logic family. An IMPLY 8-bit full adder based on this design methodology is presented as a case study. [ABSTRACT FROM AUTHOR]
- Published
- 2014
- Full Text
- View/download PDF
18. Memristor-Based Multilayer Neural Networks With Online Gradient Descent Training.
- Author
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Soudry, Daniel, Di Castro, Dotan, Gal, Asaf, Kolodny, Avinoam, and Kvatinsky, Shahar
- Subjects
ARTIFICIAL neural networks ,ARTIFICIAL intelligence ,COMPLEMENTARY metal oxide semiconductors ,MACHINE learning ,MACHINE theory - Abstract
Learning in multilayer neural networks (MNNs) relies on continuous updating of large matrices of synaptic weights by local rules. Such locality can be exploited for massive parallelism when implementing MNNs in hardware. However, these update rules require a multiply and accumulate operation for each synaptic weight, which is challenging to implement compactly using CMOS. In this paper, a method for performing these update operations simultaneously (incremental outer products) using memristor-based arrays is proposed. The method is based on the fact that, approximately, given a voltage pulse, the conductivity of a memristor will increment proportionally to the pulse duration multiplied by the pulse magnitude if the increment is sufficiently small. The proposed method uses a synaptic circuit composed of a small number of components per synapse: one memristor and two CMOS transistors. This circuit is expected to consume between 2% and 8% of the area and static power of previous CMOS-only hardware alternatives. Such a circuit can compactly implement hardware MNNs trainable by scalable algorithms based on online gradient descent (e.g., backpropagation). The utility and robustness of the proposed memristor-based circuit are demonstrated on standard supervised learning tasks. [ABSTRACT FROM PUBLISHER]
- Published
- 2015
- Full Text
- View/download PDF
19. TEAM: ThrEshold Adaptive Memristor Model.
- Author
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Kvatinsky, Shahar, Friedman, Eby G., Kolodny, Avinoam, and Weiser, Uri C.
- Subjects
- *
APPLICATION software , *SCALABILITY , *STRAY currents , *MATHEMATICAL models , *SOFTWARE compatibility , *COMPLEMENTARY metal oxide semiconductors - Abstract
Memristive devices are novel devices, which can be used in applications ranging from memory and logic to neuromorphic systems. A memristive device offers several advantages: nonvolatility, good scalability, effectively no leakage current, and compatibility with CMOS technology, both electrically and in terms of manufacturing. Several models for memristive devices have been developed and are discussed in this paper. Digital applications such as memory and logic require a model that is highly nonlinear, simple for calculations, and sufficiently accurate. In this paper, a new memristive device model is presented—TEAM, ThrEshold Adaptive Memristor model. This model is flexible and can be fit to any practical memristive device. Previously published models are compared in this paper to the proposed TEAM model. It is shown that the proposed model is reasonably accurate and computationally efficient, and is more appropriate for circuit simulation than previously published models. [ABSTRACT FROM PUBLISHER]
- Published
- 2013
- Full Text
- View/download PDF
20. Adaptive programming in multi-level cell ReRAM.
- Author
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Ramadan, Misbah, Wainstein, Nicolás, Ginosar, Ran, and Kvatinsky, Shahar
- Subjects
- *
CELLS , *FLASH memory - Abstract
Resistive memory (ReRAM) is an attractive technology to replace Flash technology and/or serve as a new memory tier. When a fixed programming voltage is applied to the resistive cell (memristor), its resistance changes logarithmically in time. This is undesirable for using the memristors as a multi-level cell (MLC) memory. We present Adaptive Programming (AP) – a feedback-based programming circuit and method that improve process variation tolerance and uniformity of MLC levels, by effectively linearizing the memristive behavior. An appropriate sneak-path current mitigation has been identified as well. AP requires fewer programming steps than other programming methods, resulting in 46% faster programming and 95% energy reduction. AP reduces the frequency of errors (FoE) by 50% as compared to other writing schemes. Furthermore, AP enables using the memristors as a multi-level counter facilitating multi-valued computing arrays for non-von Neumann machines. [ABSTRACT FROM AUTHOR]
- Published
- 2019
- Full Text
- View/download PDF
21. Logic operations in memory using a memristive Akers array.
- Author
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Levy, Yifat, Bruck, Jehoshua, Cassuto, Yuval, Friedman, Eby G., Kolodny, Avinoam, Yaakobi, Eitan, and Kvatinsky, Shahar
- Subjects
- *
MEMRISTORS , *COMPUTER storage capacity , *FEATURE extraction , *COMPUTER architecture , *BOOLEAN functions , *COMPUTER input-output equipment - Abstract
In-memory computation is one of the most promising features of memristive memory arrays. In this paper, we propose an array architecture that supports in-memory computation based on a logic array first proposed in 1972 by Sheldon Akers. The Akers logic array satisfies this objective since this array can realize any Boolean function, including bit sorting. We present a hardware version of a modified Akers logic array, where the values stored within the array serve as primary inputs. The proposed logic array uses memristors, which are nonvolatile memory devices with noteworthy properties. An Akers logic array with memristors combines memory and logic operations, where the same array stores data and performs computation. This combination opens opportunities for novel non-von Neumann computer architectures, while reducing power and enhancing memory bandwidth. [ABSTRACT FROM AUTHOR]
- Published
- 2014
- Full Text
- View/download PDF
22. Improving Efficiency and Lifetime of Logic-in-Memory by Combining IMPLY and MAGIC Families.
- Author
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Zou, Minhui, Zhou, Junlong, Sun, Jin, Wang, Chengliang, and Kvatinsky, Shahar
- Subjects
- *
MEMRISTORS , *FAMILIES , *MAGIC - Abstract
Memristor-based memory computing has attracted much attention recently. By combining the storability and computability of memristor devices together, the memristor-based in-memory computing could break the so-called von Neumann bottleneck. Logic-in-memory (LIM) aims at implementing any computing task in memory. IMPLY family and MAGIC family are two of the most popular stateful logic families of LIM. The two families have their own respective advantages and disadvantages. However, there is few work combining the two family gates together in a same memristor crossbar. In this paper, we would present X-IMPLY family gates that eliminates the required external resistors of conventional IMPLY family gates. We then show by combining X-IMPLY and MAGIC family gates, the advantages of both logic families are exploited. At last, we evaluate the proposed method on state-of-art benchmarks. The results show, averagely, our method saves more than 15% of cell usage and is more than 22% faster and increases lifetime by more than 41% compared with MAGIC SIMPLER for different size constrains of crossbar row/column. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
- View/download PDF
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