1. Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX.
- Author
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Saha, Chinmoy Nath, Vaidya, Abhishek, Bhuiyan, A. F. M. Anhar Uddin, Meng, Lingyu, Sharma, Shivam, Zhao, Hongping, and Singisetti, Uttam
- Subjects
METAL organic chemical vapor deposition ,METAL oxide semiconductor field-effect transistors ,BREAKDOWN voltage ,SILICON nitride ,INDIUM gallium zinc oxide ,LENGTH measurement - Abstract
This Letter reports a high performance β -Ga
2 O3 thin channel MOSFET with T gate and degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor deposition. Highly scaled T-gate with a gate length of 160–200 nm was fabricated to achieve enhanced RF performance and passivated with 200 nm silicon nitride. Peak drain current (ID,MAX ) of 285 mA/mm and peak transconductance (gm ) of 52 mS/mm were measured at 10 V drain bias with 23.5 Ω mm on resistance (RON ). Metal/n++ contact resistance of 0.078 Ω mm was extracted from transfer length measurements. RON is possibly dominated by interface resistance between channel and highly doped n++ regrown layer. A gate-to-drain breakdown voltage of 192 V is measured for LGD = 355 nm resulting in average breakdown field (EAVG ) of 5.4 MV/cm. This EAVG is the highest reported among all sub-micron gate length lateral FETs. Current gain cut off frequency (fT ) of 11 GHz and record power gain cut off frequency (fMAX ) of approximately 48 GHz were extracted from small signal measurements. fT is limited by DC-RF dispersion due to interface traps which needs further investigation. The fT ·VBR product is 2.112 THz V for 192 V breakdown voltage. Device surpasses the switching figure of merit of Silicon and competitive with mature wide bandgap devices. [ABSTRACT FROM AUTHOR]- Published
- 2023
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