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The work reported in this paper describes the design and simulation of a novel current mirror readout circuit based MOSFET integrated cantilever structure for micro-gram (μ g) mass sensing applications. The proposed mass sensing structure consist of silicon cantilever as the micromechanical structure, MOSFET as strain sensing element and current mirror as a readout circuit. In this paper, studies have been carried out on three structures (a) n-channel MOSFET based resistive loaded current mirror integrated cantilever mass sensor (b) p-channel MOSFET based resistive loaded current mirror integrated cantilever mass sensor and (c) n- and p- channel MOSFETs based dual current mirror integrated cantilever mass sensor. The input MOSFET(s) of the current mirror acts as the reference transistor(s) while the output MOSFET(s) of the mirror circuit acts as strain sensing element(s) to measure the cantilever deflection under externally applied load. The structural and the electrical characteristics of the sensors were simulated using COMSOL Multiphysics and TSPICE software respectively. Simulation results showed a sensitivity of 21.89 μ V/ μ g, 1 μ V/ μ g and 115.57 μ V/ μ g for nMOS, pMOS and dual channel cantilever mass sensor. The fabrication steps and mask layout of the proposed sensor have also been presented in this paper. The novelty of this work is emphasized by the innovative integration of a CMOS current mirror circuit with a cantilever for mass sensing. [ABSTRACT FROM AUTHOR]

Purpose: This paper aims to describe the fabrication, packaging and testing of a resistive loaded p-channel metal-oxide-semiconductor field-effect transistor-based (MOSFET-based) current mirror-integrated pressure transducer. Design/methodology/approach: Using the concept of piezoresistive effect in a MOSFET, three identical p-channel MOSFETs connected in current mirror configuration have been designed and fabricated using the standard polysilicon gate process and microelectromechanical system (MEMS) techniques for pressure sensing application. The channel length and width of the p-channel MOSFETs are 100 µm and 500 µm, respectively. The MOSFET M1 of the current mirror is the reference transistor that acts as the constant current source. MOSFETs M2 and M3 are the pressure-sensing transistors embedded on the diaphragm near the mid of fixed edge and at the center of the square diaphragm, respectively, to experience both the tensile and compressive stress developed due to externally applied input pressure. A flexible square diaphragm having a length of approximately 1,000 µm and thickness of 50 µm has been realized using deep-reactive ion etching of silicon on the backside of the wafer. Then, the fabricated sensor chip has been diced and mounted on a TO8 header for the testing with pressure. Findings: The experimental result of the pressure sensor chip shows a sensitivity of approximately 0.2162 mV/psi (31.35 mV/MPa) for an input pressure of 0-100 psi. The output response shows a good linearity and very low-pressure hysteresis. In addition, the pressure-sensing structure has been simulated using the parameters of the fabricated pressure sensor and from the simulation result a pressure sensitivity of approximately 0.2283 mV/psi (33.11 mV/MPa) has been observed for input pressure ranging from 0 to 100 psi with a step size of 10 psi. The simulated and experimentally tested pressure sensitivities of the pressure sensor are in close agreement with each other. Originality/value: This current mirror readout circuit-based MEMS pressure sensor is new and fully compatible to standard CMOS processes and has a promising application in the development CMOS-MEMS-integrated smart sensors. [ABSTRACT FROM AUTHOR]

Purpose This paper aims to describe the fabrication and characterization of current mirror-integrated microelectromechanical systems (MEMS)-based pressure sensor.Design/methodology/approach The integrated pressure-sensing structure consists of three identical 100-µm long and 500-µm wide n-channel MOSFETs connected in a resistive loaded current mirror configuration. The input transistor of the mirror acts as a constant current source MOSFET and the output transistors are the stress sensing MOSFETs embedded near the fixed edge and at the center of a square silicon diaphragm to sense tensile and compressive stresses, respectively, developed under applied pressure. The current mirror circuit was fabricated using standard polysilicon gate complementary metal oxide semiconductor (CMOS) technology on the front side of the silicon wafer and the flexible pressure sensing square silicon diaphragm, with a length of 1,050 µm and width of 88 µm, was formed by bulk micromachining process using tetramethylammonium hydroxide solution on the backside of the wafer. The pressure is monitored by the acquisition of drain voltages of the pressure sensing MOSFETs placed near the fixed edge and at the center of the diaphragm.Findings The current mirror-integrated pressure sensor was successfully fabricated and tested using in-house developed pressure measurement system. The pressure sensitivity of the tested sensor was found to be approximately 0.3 mV/psi (or 44.6 mV/MPa) for pressure range of 0 to 100 psi. In addition, the pressure sensor was also simulated using Intellisuite MEMS Software and simulated pressure sensitivity of the sensor was found to be approximately 53.6 mV/MPa. The simulated and measured pressure sensitivities of the pressure sensor are in close agreement.Originality/value The work reported in this paper validates the use of MOSFETs connected in current mirror configuration for the measurement of tensile and compressive stresses developed in a silicon diaphragm under applied pressure. This current mirror readout circuitry integrated with MEMS pressure-sensing structure is new and fully compatible to standard CMOS processes and has a promising application in the development CMOS-MEMS-integrated smart sensors. [ABSTRACT FROM AUTHOR]