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This paper presents a detailed Monte Carlo study of the optimization of the dopant segregation (DS) layer in n-type Schottky barrier (SB)-MOSFET. It is shown that with a careful control of the DS layer parameters, dopant concentration (N dop ), and length (L dop ), the performance of the devices is significantly enhanced. The presence of the DS layer induces crucial effects in the injection processes at the Schottky contacts. The benefits of increasing the length and the doping level of the DS layer are studied from the microscopic point of view (transit times, average number of scatterings). The effect of varying these parameters is also analyzed through the nonquasi-static parameters of the small signal equivalent circuit, which can be useful for designers to improve the reliability of the SB-MOSFET technology. [ABSTRACT FROM AUTHOR]

We present a particle-based Monte Carlo investigation of the high frequency noise behavior of a double gate MOSFET. The effective potential approach has been considered for the description of vertical quantum confinement of carriers within the channel. The intrinsic noise sources and the main circuital noise parameters are studied, together with the static and dynamic parameters, thus allowing to provide a full comprehension of the inner physics of the device and elucidating the consequences of quantum mechanical space-quantization effects (like charge repulsion from the gate-oxide boundaries). Results show that neglecting quantum phenomena leads to an important overestimation of gate capacitance and device transconductance and an underestimation of the final influence of induced gate noise (via the normalized parameter R) on the circuital noise parameters at RF and microwave frequency ranges. [ABSTRACT FROM AUTHOR]