1. Modeling Single-Event Upsets in 65-nm Silicon-on-Insulator Semiconductor Devices.
- Author
-
Kleinosowski, A. J., Oldiges, Phil, Williams, Richard Q., and Solomon, Paul M.
- Subjects
ALPHA rays ,MODELING (Sculpture) ,RADIATION ,SILICON-on-insulator technology ,METAL oxide semiconductor field-effect transistors ,IONIZING radiation ,DIFFUSION ,MAGNETIC memory (Computers) ,COMPUTER storage devices - Abstract
This paper describes a technique for modeling single-event upsets due to ionizing radiation in a partially depleted silicon-on-insulator (SOI) MOSFET device. Two current pulses are used, one connected between the drain and body of the device, and the other connected between the body and source of the device. The physical representation of these two current sources is described in detail. Circuit modeling is verified against drift-diffusion field solver modeling and hardware experiments. The effects of manufacturing variation and operating condition variation on the qCrit of circuit storage elements are explored. [ABSTRACT FROM AUTHOR]
- Published
- 2006
- Full Text
- View/download PDF