1. Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
- Author
-
Huang, Sheng-Yao, Chang, Ting-Chang, Chen, Min-Chen, Chen, Shih-Ching, Lo, Hung-Ping, Huang, Hui-Chun, Gan, Der-Shin, Sze, Simon M., and Tsai, Ming-Jinn
- Subjects
- *
SAMARIUM , *THIN films , *RANDOM access memory , *SPUTTERING (Physics) , *METALLIC oxides - Abstract
Abstract: This study investigates a sputtered Sm2O3 thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance ratio of about 2.5 orders after 104 cycling bias pulses and no degradation for retention characteristics monitored after an endurance test at 85°C. The conduction mechanisms for low and high resistance states are dominated by ohmic behavior and trap-controlled space–charge limited current, respectively. The resistance switching is ascribed to the formation/rupture of conductive filaments. [Copyright &y& Elsevier]
- Published
- 2011
- Full Text
- View/download PDF