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Lithium intercalation and de-intercalation processes have been used to fabricate bulk Bi2Se0.3Te2.7with internal nanostructures. The doped Li content can be precisely controlled through this method. It provides a chance to directly optimize electrical properties when preparing nano-structured materials, leading to the optimum carrier concentration for improved thermoelectric figure of merit. [ABSTRACT FROM AUTHOR]

Abstract: n-type filled skutterudite Yb0.26Co4Sb12 composites in which p-type GaSb nanostructured inclusions (5–20nm) were dispersed were fabricated by an in situ method involving the introduction of metastable void-filling impurity Ga and enrichment of Sb in the synthesis procedure. With the homogeneously dispersed GaSb nanoinclusions, which probably result from the scattering of low-energy electrons by the GaSb-related boundary energy barriers, the power factor is enhanced due to the significant enhancement of the Seebeck coefficient. The total thermal conductivity was decreased with the depression of electronic thermal conductivity. As a result, the dimensionless thermoelectric figure of merit ZT value was improved over a wide working temperature range of 300–850K, and the expected optimal thermal-electric conversion efficiency ηopt 15.0% was obtained for the Yb0.26Co4Sb12/0.2GaSb nanocomposite. [Copyright &y& Elsevier]