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A compact cascaded tunable distributed feedback semiconductor laser is proposed and theoretically analyzed. Each laser section (LS) is formed by two adjacent grating sections (GSs) with slightly different Bragg wavelengths and a $\pi $ phase shift in the joint between them. A step-wise grating period profile is designed to realize multi-channel lasing. Since two LSs share a common GS, the total cavity length of the tunable laser is significantly reduced. As an example, a tunable laser with six GSs and five $\pi $ phase shifts was designed and analyzed, resulting in a continuous tuning range of 12 nm. The total length of the laser is reduced by 40% compared with the conventional structure. Furthermore, an improved structure with apodized grating in each GS is also proposed. The single mode stability and fabrication tolerance are significantly improved. Due to the compact structure, the cost of the proposed laser can be highly reduced. Therefore, we think the proposed structure would benefit the practical applications to the low cost tunable lasers in wavelength-division multiplexing systems. [ABSTRACT FROM AUTHOR]

A dual-passband microwave photonic filter (MPF) implemented based on phase-modulation to intensity-modulation (PM-IM) conversion using a phase modulator and an equivalent phase-shifted fiber Bragg grating (EPS-FBG) is proposed and experimentally demonstrated. The key component in the system is the EPS-FBG, which is designed and fabricated based on the equivalent phase-shift technique. The unique feature of the EPS-FBG is that equivalent phase shifts are introduced to both of the \pm \1^st channels, leading to a notch in each of the two channels. Thus, by implementing PM-IM conversion in the two channels, two passbands are produced. The central frequency of each passband is determined by the wavelength different between the notch and the optical carrier. In the design and fabrication, two phase shifts are introduced to the EPS-FBG to decrease the shape factor, which is defined as the ratio between the 20- and 3-dB bandwidths. In addition, a stimulated Brillouin scattering (SBS) assisted filter is incorporated in the system for carrier suppression to increase the spurious-free dynamic range (SFDR) and decrease the noise figure (NF) of the MPF. An experiment is performed. A dual passband filter with a 3-dB bandwidth and a shape factor of 167.3 MHz and 3.8, and 143.3 MHz and 3.3 for the \1^st and \2^nd passband is achieved. The frequency tunable ranges of the \1^st and \2^nd passbands are 5.4 and 7.4 GHz, respectively, with the magnitude variations of about \pm \ 0.5 dB during the turning. Due to the SBS-assisted filter, the SFDRs are increased by 7 dB and the NFs are decreased by 10 dB. [ABSTRACT FROM AUTHOR]

A distributed feedback (DFB) semiconductor laser with three phase shifts based on reconstruction equivalent chirp (REC) technology is proposed and investigated numerically. With the combination of multiple phase shifts and corrugation pitch modulated (CPM) structure, we also propose a novel and more complex structure named dual CPM, which has a flatter light power distribution along the laser cavity compared with the true double phase shifts DFB laser diode (LD), while the P-I curves are nearly the same. The proposed dual CPM structure is also designed and analyzed based on REC technology. The simulation results show that, the DFB semiconductor laser with complex structure such as phase shifts, or even arbitrary variation of the grating period can be achieved equivalently and easily by changing the sampling structure. But its external characteristics are almost the same as those DFB lasers with true phase shifts, or true arbitrary variation of the grating period. The key advantage of the REC technology is that it varies only the sampling structure and keeps the seed grating (actual grating in sampling structure) period constant. So its fabrication needs only low-cost and standard holographic exposure technology. Therefore we believe this method can achieve the high-end and low-cost DFB LD for mass production. [ABSTRACT FROM AUTHOR]

The tunable distributed feedback (DFB) semiconductor lasers with cascaded configuration were designed and fabricated using equivalent phase shift (EPS) technique. 32-wavelength division multiplexing (WDM) channels with 50-GHz and 100-GHz wavelength spacing were experimentally demonstrated. In such a tunable laser, single mode operation can be ensured by introducing EPS and the wavelength tuning can be realized by cascaded sections with specific sampling periods combining with chip heating. The proposed approach has some advantages such as good single mode property, low fabrication cost and feasibility of monolithic integration. The experimental results show that the tuning range can be nearly up to 25 nm and the side mode suppression ratios (SMSRs) of most channels are above 40 dB. The proposed laser should be promising for cost-effective applications in WDM systems. [ABSTRACT FROM AUTHOR]

Abstract: The phase-shifted distributed feedback (DFB) semiconductor laser with linearly chirped grating based on reconstruction equivalent chirp (REC) technique is theoretically analyzed and experimentally demonstrated for the first time. The asymmetric property of the lasing spectrum is analyzed according to the normalized threshold gain, and the different spectra from each facet of the laser are compared. Due to the low cost and fabrication flexibility, REC technique provides a promising way for the future practical applications of DFB lasers with chirped gratings. [Copyright &y& Elsevier]

Abstract: An apodized DFB semiconductor laser based on reconstruction-equivalent-chirp (REC) technology is proposed and investigated numerically. By changing the duty cycle of the sampling period, the magnitude of the equivalent index modulation is varied. Thus the equivalent apodization is introduced instead of an actual apodization. This novel DFB structure is advantageous in that it can enlarge the threshold gain difference and improve the mode stability compared with the conventional DFB laser. Moreover, the structure can be easily fabricated by standard holographic technology instead of high cost Electron-beam lithography. [Copyright &y& Elsevier]