1. Description of Statistical Switching in Perpendicular STT-MRAM Within an Analytical and Numerical Micromagnetic Framework.
- Author
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Siracusano, G., Tomasello, R., d'Aquino, M., Puliafito, V., Giordano, A., Azzerboni, B., Braganca, P., Finocchio, G., and Carpentieri, M.
- Subjects
RANDOM access memory ,MAGNETIC control ,MORE O'Ferrall-Jencks diagrams ,SPIN transfer torque ,MAGNETORESISTIVE devices ,MICROMAGNETICS - Abstract
The realistic modeling of spin-transfer torque (STT)-magnetoresistive random access memory (MRAM) for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments requires a full description of stochastic switching processes in the state-of-the-art STT-MRAMs. Here, we compare micromagnetic simulations with an analytical formulation that takes into account the spin-torque asymmetry of the spin-polarization function by considering the mean, standard deviation, skewness, and kurtosis. We find that, while the first and second statistical moments exhibit a very similar behavior, skewness and kurtosis are substantially different and must be taken into account in order to provide an accurate prediction of the switching performance. In fact, a reasonable fit of the probability density function (PDF) of the switching time is given by a Pearson Type IV PDF. The main achievements of this paper underline the need of data-driven design of STT-MRAM that uses a full micromagnetic simulation framework for the statistical proprieties PDF of switching processes. [ABSTRACT FROM PUBLISHER]
- Published
- 2018
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