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Determination of optical, mechanical and electrical characteristics is one of the decisive factors in the design of instrumentation structures of thermal uncooled bolometer-type detectors (microbolometers). The paper presents the results of optimization calculations by means of computer simulation of absorption, transmittance and reflection spectra of device structures of microbolometers based on thermosensitive vanadium oxide film by finite-difference time-domain method (FDTD). The characteristics of the investigated microbolometer structure were checked for compliance with mechanical and electrical requirements for this class of devices.

The increased interest in utilizing uncooled thermal bolometer-type detectors (microbolometers) within the infrared or terahertz detection field is justified by their operational and technological characteristics, in particular: relatively low manufacturing cost, high detection efficiency, compatibility with silicon CMOS technology, and operation at room temperature. The performance of such detectors depends on optimizing critical parameters, which are dictated by both the geometrical design and the electrical, optical, and thermal properties of the materials used. The determination of optical parameters stands as a decisive factor in the design of microbolometer structures. This article delves into the examination of optical parameters of thin films of structural materials of microbolometer based on thermosensitive vanadium oxide film manufactured at JSC “INTEGRAL”. The investigation showcases the results of determining optical constants (refractive indexes n and absorption coefficients k) of thin films from the transmission curve by applying the reflection-transmission method. Furthermore, a comparison is carried out between the results of computer modeling of the transmission, reflection and absorption spectra – taking into account the obtained values of the coefficients n and k – and the empirical data from the in-situ experiment.

Uncooled bolometric type thermal detectors, combined into a matrix and placed into a focal plane array have the following characteristics: low cost, operation at room temperature, compatibility with the silicon CMOS technology, and high detecting performance; therefore recently it became a hot spot in infrared or terahertz detection field. The performance of uncooled infrared focal plane detector arrays depends on the optimization of critical parameters which are determined by geometrical design and the electrical, optical, and thermal physical properties of the detector materials. We report the study of a fabrication process and characterization of two (2D) dimensional arrays of uncooled microbolometers based on silicon (α-Si) thermo-sensing films. Because these arrays substantially reduce sensor size, they are becoming the preferred format for most modern applications.

A comparative analysis of the characteristics of the main types of bolometers is indicated in the article. The constructive solution of an uncooled thermal detector of the bolometric type, formed using the technology of microelectromechanical systems, is studied. By means of computer simulation in modern computer-aided design systems in microelectronics, a static mechanical analysis was performed to assess the effect of mechanical stresses arising in structural materials during their formation on the magnitude of deformation. It has been established that to ensure the normal functioning of the microbolometer (to reduce the maximum deviation value of the film from the nominal value), it is necessary to reduce the internal mechanical stresses in the NiCr film. For the Si3N4 films, on the contrary, this value should be increased.