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A novel technique for measuring in vivo human skin viscoelastic properties using optical elastography has been developed. The technique uses geometrically focused surface (GFS) waves that allow for wide bandwidth measurements of the wave field. An analytical solution for the case of a radiating annular disk surface source was fit to experimentally measured GFS waves, enabling an estimate of the frequency-dependent surface wavenumber, which can then be related to the dynamic shear modulus. Several viscoelastic models were then fit to the dynamic shear modulus dispersion curve. Viscoelastic models were evaluated based on their overall quality of fit and variability amongst healthy volunteers. An Ecoflex phantom was used to validate the procedure and results by comparison to similar studies using the same type of phantom. For skin results, it was found that the 'α' parameters from the fractional models had the least variability, with coefficients of variability of 0.15, and 0.16. The best fitting models were the standard linear solid, and the fractional Voigt, with a mean fit correlation coefficient, R(2), of 0.93, 0.89, respectively. This study has demonstrated the efficacy of this new method, and with larger studies the viscoelastic skin models could be used to identify various skin diseases and their response to treatment.

Analysis of the Raman Stokes peak position and its shift has been frequently used to estimate either temperature or stress in microelectronics and microelectromechanical system devices. However, if both fields are evolving simultaneously, the Stokes shift represents a convolution of these effects, making it difficult to measure either quantity accurately. By using the relative independence of the Stokes linewidth to applied stress, it is possible to deconvolve the signal into an estimation of both temperature and stress. Using this property, a method is presented whereby the temperature and stress were simultaneously measured in doped polysilicon microheaters. A data collection and analysis method was developed to reduce the uncertainty in the measured stresses resulting in an accuracy of +/-40 MPa for an average applied stress of -325 MPa and temperature of 520 degrees C. Measurement results were compared to three-dimensional finite-element analysis of the microheaters and were shown to be in excellent agreement. This analysis shows that Raman spectroscopy has the potential to measure both evolving temperature and stress fields in devices using a single optical measurement.