1. A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance In0.52Al0.48As/1n0.53Ga0.47As p-HEMTs.
- Author
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Tae-Woo Kim, Dae-Hyun Kim, Park, Sang-Duk, Seung Heon Shin, Seong June Jo, Song, Ho-Jin, Park, Young Min, Jeoun-Oun Bae, Young-Woon Kim, Geun-Young Yeom, Jae-Hyung Jang, and Song, Jong-In
- Subjects
ETCHING ,MODULATION-doped field-effect transistors ,SEMICONDUCTORS ,SURFACE roughness ,INDIUM phosphide ,ALUMINUM ,ARSENIC ,GALLIUM arsenide - Abstract
We investigated 60-nm In
0.52 Al0.48 As/In0.53 Ga0.47 As pseudomorphic high-electron mobility transistors (p-HEMTs) fabricated by using a Ne-based atomic-layer-etching (ALET) technology. The ALET process produced a reproducible etch rate of 1.47 Å/cycle for an InP etch stop layer, an excellent InP etch selectivity of 70 against an In0.52 Al0.48 As barrier layer, and an rms surface-roughness value of 1.37 Å for the exposed In0.52 Al0.48 As barrier after removing the InP etch stop layer. The application of the ALET technology for the gate recess of 60-nm In0.52 Al0.48 As/In0.53 Ga0.47 As p-HEMTs produced improved device parameters, including transconductance (GM ), cutoff frequencies (fT ), and electron saturation velocity (Vsat ) in the channel layer, which is mainly due to the high etch selectivity and low plasma-induced damage to the gate area. The 60-nm In0.52 Al0.48 As/In0.53 Ga0.47 As p-HEMTs fabricated by using the ALET technology exhibited GM,Max = 1.17 S/mm, fT = 398 GHz, and Vsat = 2.5 x 107 cm/s. [ABSTRACT FROM AUTHOR]- Published
- 2008
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