1. Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions and ex situ annealing.
- Author
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T A Komissarova, M V Lebedev, S V Sorokin, G V Klimko, I V Sedova, S V Gronin, K A Komissarov, W Calvet, M N Drozdov, and S V Ivanov
- Subjects
ELECTRIC properties of zinc selenide ,MOLECULAR beam epitaxy ,SURFACE reconstruction ,VALENCE bands ,CHEMICAL bonds - Abstract
A study of electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces (HI) in dependence on molecular beam epitaxy (MBE) growth conditions and post-growth annealing was performed. Initial GaAs surface reconstructions ((2 × 4)As or c(4 × 4)As) and ZnSe growth mode (MBE or migration-enhanced epitaxy (MEE)) were varied for different undoped and n-doped heterovalent structures. Although all the structures have low extended defect density (less than 10
6 cm−2 ) and rather small (less than 5 nm) atomic interdiffusion at the HI, the structural, chemical and electronic properties of the near-interface area (short-distance interdiffusion effects, dominant chemical bonds, and valence band offset values) as well as electrical properties of the n-GaAs/n-ZnSe heterovalent structures were found to be influenced strongly by the MBE growth conditions and post-growth annealing. [ABSTRACT FROM AUTHOR]- Published
- 2017
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