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Abstract: The current paper presents a theoretical analysis of Ni-63 nuclear micro-battery based on a wide-band gap semiconductor GaN thin-film covered with thin Ni/Au films to form Schottky barrier for carrier separation. The total energy deposition in GaN was calculated using Monte Carlo methods by taking into account the full beta spectral energy, which provided an optimal design on Schottky barrier width. The calculated results show that an 8μm thick Schottky barrier can collect about 95% of the incident beta particle energy. Considering the actual limitations of current GaN growth technique, a Fe-doped compensation technique by MOCVD method can be used to realize the n-type GaN with a carrier concentration of 1×1015 cm−3, by which a GaN based Schottky betavoltaic micro-battery can achieve an energy conversion efficiency of 2.25% based on the theoretical calculations of semiconductor device physics. [Copyright &y& Elsevier]

[Display omitted] • Interaction of β particles with ECSs was simulated using Monte Carlo method. • Quasi-solid electrolyte (QSE) is used to improve the long-term stability of the device. • A IL/gel-based QSE was used to improve the performances of EBV/EPV cells. • ZnO/CdS heterojunction enhances the electrochemical redox reactions. Electrochemical betavoltaic (EBV) cells are promising power sources for low-power electronics in remote and harsh environments. However, their practical applications are limited by the organic liquid electrolytes with the inferior temperature stability and narrow electrochemical window. In this work, a quasi-solid-state EBV cell was fabricated using a high-conductive gel-based quasi-solid-electrolyte (QSE), a CdS-modificated ZnO nanorod arrays (ZNRAs) structure as the anode material, a radioactive 63Ni sheet as the cathode as well as the irradiation source. Monte Carlo (MC) simulations are utilized to determine the optimized length (2.97 μm) of the ZNRAs filled by electrolyte, Electrochemical photovoltaic (EPV) cells were used to assess and optimize the content of CdS loaded on the ZNRAs. The optimum EBV cell demonstrated an excellent long-term stability and a high energy-conversion efficiency of 10.09 % with a short-circuit current density of 0.755 μA cm−2 and an open-circuit voltage of 0.288 V. The porous CdS@ZNRAs core–shell structure filled by soft ionic liquids (IL)/gel-based QSE enables a large specific area of electrochemical interface network. The synergistic effects of 3-D CdS/ZnO heterostructure with type-II band alignment and IL/gel-based QSE are responsible for the enhanced ECE and improved long-term stability of EBV/EPV cells. [ABSTRACT FROM AUTHOR]

Abstract: In this paper, we present the design and simulation of a p–n junction betavoltaic battery based on large-grain polysilicon. By the Monte Carlo simulation, the average penetration depth were obtained, according to which the optimal depletion region width was designed. The carriers transport model of large-grain polysilicon is used to determine the diffusion length of minority carrier. By optimizing the doping concentration, the maximum power conversion efficiency can be achieved to be 0.90% with a 10mCi/cm2 Ni-63 source radiation. [Copyright &y& Elsevier]