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Multiferroic domain walls have recently been proposed as the active element in devices related to spintronics, data storage, and magnetic logic. Among multiferroics, BiFeO3 is by far the most studied material. Its domain walls have shown rich behaviours that include conductivity in an otherwise insulating crystal, and magnetotransport properties that are markedly different from those of the bulk. In this article we summarize the experimental evidence and the current models used to understand the interplay between elastic, electric, and magnetic properties of the domain walls. Starting from the considera- tion of antiferromagnetic domain structures on a background of ferroelectric domains, and emphasizing pinning effects, we proceed to discuss the microscopic behavior of ferroelectricity and magnetism at the walls. We describe how domain organization in BiFeO3 is caused by structural transformations, and scrutinize modelling works pinpointing their characteristic features. Finally, we summarize the recent progress and list open questions for future study on BiFeO3 domain structures. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

The technological appeal of multiferroics is the ability to control magnetism with electric field. For devices to be useful, such control must be achieved at room temperature. The only single-phase multiferroic material exhibiting unambiguous magnetoelectric coupling at room temperature is BiFeO3 (refs 4 and 5). Its weak ferromagnetism arises from the canting of the antiferromagnetically aligned spins by the Dzyaloshinskii-Moriya (DM) interaction. Prior theory considered the symmetry of the thermodynamic ground state and concluded that direct 180-degree switching of the DM vector by the ferroelectric polarization was forbidden. Instead, we examined the kinetics of the switching process, something not considered previously in theoretical work. Here we show a deterministic reversal of the DM vector and canted moment using an electric field at room temperature. First-principles calculations reveal that the switching kinetics favours a two-step switching process. In each step the DM vector and polarization are coupled and 180-degree deterministic switching of magnetization hence becomes possible, in agreement with experimental observation. We exploit this switching to demonstrate energy-efficient control of a spin-valve device at room temperature. The energy per unit area required is approximately an order of magnitude less than that needed for spin-transfer torque switching. Given that the DM interaction is fundamental to single-phase multiferroics and magnetoelectrics, our results suggest ways to engineer magnetoelectric switching and tailor technologically pertinent functionality for nanometre-scale, low-energy-consumption, non-volatile magnetoelectronics. [ABSTRACT FROM AUTHOR]