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Massive two-dimensional (2D) Bi 2 O 3 nanosheets (NSs) were synthesized adopting a facile solution route. It can be distinctly perceived that the average dimension of the Bi 2 O 3 NSs was mainly centered in the range of 1–2 μm and the thickness reached about 110 nm. Afterward, the self-powered ultraviolet photodetector (UVPD) was successfully prepared established on the 2D Bi 2 O 3 NSs, which exhibited high photosensitivity and robust stability in exposure to UV light, accompanied with the fast rise time of ∼33 ms and decay time of ∼47 ms. In addition, the Bi 2 O 3 NSs UVPD could perform a stable operation over a wide range of UV light intensities. Moreover, the photodetection mechanism for the Bi 2 O 3 NSs UVPD was also illustrated. • Massive two-dimensional Bi 2 O 3 nanosheets were synthesized adopting a facile solution route. • Exposure to UV light, Bi 2 O 3 nanosheets UV photodetector exhibited high photosensitivity free of the external power. • Bi 2 O 3 nanosheets UV photodetector could perform stable operation over the wide range of UV light intensities. [ABSTRACT FROM AUTHOR]

• Scaly-like hollow SnSe nanotubes (NTs) were synthesized by a green and rapid solution method. • Light utilization efficiency is improved due to unique scaly-like hollow structure and large surface area of the SnSe NTs. • SnSe NTs infrared photodetector can realize efficient and stable IR light detection free of the external power. [Display omitted] SnSe nanotubes (NTs) have been successfully synthesized via a simple solution method. The as-synthesized tubular crystals with orthorhombic structure are composed of numerous scaly nanosheets which distributed hierarchically. The average diameter of the SnSe NTs is roughly 180 nm and length primarily concentrate in the range of 1–3 µm. It was found that Se nanowires were served as a template and as an only source of Se ion for the formation of SnSe NTs. Furthermore, a novel self-powered infrared photodetector (IRPD) established on the SnSe NTs with desirable detection performance was fabricated. Exposed to IR illumination of 830 nm, the SnSe NTs IRPD displays a maximal photocurrent density of 46.46 nA/cm2 and a rapid photoresponse, together with the rise time and decay time approach up to 0.174 s and 0.349 s, respectively. Meanwhile, it can be recognized that the SnSe NTs IRPD remain consistent and repeatable at zero voltage. Moreover, a plausible mechanism for IR detection based on the SnSe NTs IRPD are also discussed. [ABSTRACT FROM AUTHOR]