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In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly doped (10(15) cm(-3)) p-type silicon-on-insulator by atomic force microscope nanolithography technique. The local anodic oxidation followed by two wet etching steps, potassium hydroxide etching for silicon removal and hydrofluoric etching for oxide removal, are implemented to reach the structures. The impact of contributing parameters in oxidation such as tip materials, applying voltage on the tip, relative humidity and exposure time are studied. The effect of the etchant concentration (10% to 30% wt) of potassium hydroxide and its mixture with isopropyl alcohol (10%vol. IPA ) at different temperatures on silicon surface are expressed. For different KOH concentrations, the effect of etching with the IPA admixture and the effect of the immersing time in the etching process on the structure are investigated. The etching processes are accurately optimized by 30%wt. KOH +10%vol. IPA in appropriate time, temperature, and humidity.

The use of nanoengineered metallic complex mediums in the monitoring of urine is investigated in this study. As to the mediums used, nanoscaled thin films comprised of (i) copper nanohelix structures of two different numbers of helical turns and (ii) columnar thin films of copper nanorods of two different slanting angles grown over planar glass surface – a dielectric medium – are taken into account. Turbadar–Kretschmann–Raether (TKR) configuration is used to couple light with the metallic nanoengineered thin films, and the absorption spectra are monitored corresponding to two different optical wavelengths. The void regions in nanoengineered metallic films are filled up with urine as the analyte, which causes to alter the constitutive properties, resulting thereby shifts in the peaks in absorption spectra. Prominent shifts in absorption peaks corresponding to nanoengineered mediums infiltrated with urine essentially confirm prudent optical sensing characteristics of the devices under consideration. [ABSTRACT FROM PUBLISHER]

This paper examines the impact of two important geometrical parameters, namely the thickness and source/drain extensions on the performance of low doped p-type double lateral gate junctionless transistors (DGJLTs). The three dimensional Technology Computer-Aided Design simulation is implemented to calculate the characteristics of the devices with different thickness and source/drain extension and based on that, the parameters such as threshold voltage, transconductance and resistance in saturation region are analyzed. In addition, simulation results provide a physical explanation for the variation of device characteristics given by the variation of geometric parameters, mainly based on investigation of the electric field components and the carries density variation. It is shown that, the variation of the carrier density is the main factor which affects the characteristics of the device when the device's thickness is varied. However, the electric field is mainly responsible for variation of the characteristics when the source/drain extension is changed. [ABSTRACT FROM AUTHOR]