1. Integration of a graphene ink as gate electrode for printed organic complementary thin-film transistors
- Author
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Mohammed Benwadih, Stephanie Jacob, A. Aliane, Isabelle Chartier, Jacqueline Bablet, and R. Coppard
- Subjects
Materials science ,Nanotechnology ,02 engineering and technology ,Dielectric ,Ring oscillator ,010402 general chemistry ,01 natural sciences ,7. Clean energy ,Capacitance ,law.invention ,Biomaterials ,law ,Materials Chemistry ,Electrical and Electronic Engineering ,business.industry ,Graphene ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,Semiconductor ,CMOS ,Thin-film transistor ,Electrode ,0210 nano-technology ,business - Abstract
We demonstrate a new electrode gate based on graphene ink for complementary printed organic metal oxide semiconductor (CMOS) technology on flexible plastic substrates. The goal is to replace the standard silver electrode gate. Devices made with graphene were enhanced and showed a high field-effect mobility of 3 cm 2 V −1 s −1 for P-type and 0.9 cm 2 V −1 s −1 for the N-type semiconductors. The improvement is attributed to the increase of the electrical capacitance of the organic dielectric (CYTOP) due to the graphene layer. A seven-stage ring oscillator was made with high oscillation frequencies of 2.1 kHz at 40 V corresponding to a delay/gate value of 34 μs. These performances are promising for use of low cost printed electronic applications.
- Published
- 2014
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